Patent application number | Description | Published |
20090093100 | METHOD FOR FORMING AN AIR GAP IN MULTILEVEL INTERCONNECT STRUCTURE - The present invention generally provides a method for forming multilevel interconnect structures, including multilevel interconnect structures that include an air gap. One embodiment provides a method for forming conductive lines in a semiconductor structure comprising forming trenches in a first dielectric layer, wherein air gaps are to be formed in the first dielectric layer, depositing a conformal dielectric barrier film in the trenches, wherein the conformal dielectric barrier film comprises a low k dielectric material configured to serve as a barrier against a wet etching chemistry used in forming the air gaps in the first dielectric layer, depositing a metallic diffusion barrier film over the conformal low k dielectric layer, and depositing a conductive material to fill the trenches. | 04-09-2009 |
20090093132 | METHODS TO OBTAIN LOW K DIELECTRIC BARRIER WITH SUPERIOR ETCH RESISTIVITY - The present invention generally provides a method for forming a dielectric barrier with lowered dielectric constant, improved etching resistivity and good barrier property. One embodiment provides a method for processing a semiconductor substrate comprising flowing a precursor to a processing chamber, wherein the precursor comprises silicon-carbon bonds and carbon-carbon bonds, and generating a low density plasma of the precursor in the processing chamber to form a dielectric barrier film having carbon-carbon bonds on the semiconductor substrate, wherein the at least a portion of carbon-carbon bonds in the precursor is preserved in the low density plasma and incorporated in the dielectric barrier film. | 04-09-2009 |
20090257265 | Multilevel nonvolatile memory device containing a carbon storage material and methods of making and using same - A nonvolatile memory cell includes a steering element located in series with a storage element. The storage element includes a carbon material and the memory cell includes a rewritable cell having multiple memory levels. | 10-15-2009 |
20090257270 | DAMASCENE INTEGRATION METHODS FOR GRAPHITIC FILMS IN THREE-DIMENSIONAL MEMORIES AND MEMORIES FORMED THEREFROM - In some aspects, a microelectronic structure is provided that includes (1) a first conducting layer; (2) a first dielectric layer formed above the first conducting layer and having a feature that exposes a portion of the first conducting layer; (3) a graphitic carbon film disposed on a sidewall of the feature defined by the first dielectric layer and in contact with the first conducting layer at a bottom of the feature; and (4) a second conducting layer disposed above and in contact with the graphitic carbon film. Numerous other aspects are provided. | 10-15-2009 |
20100006811 | CARBON-BASED INTERFACE LAYER FOR A MEMORY DEVICE AND METHODS OF FORMING THE SAME - In a first aspect, a memory cell is provided that includes (1) a first conductor; (2) a reversible resistance-switching element formed above the first conductor including (a) a carbon-based resistivity switching material; and (b) a carbon-based interface layer coupled to the carbon-based resistivity switching material; (3) a steering element formed above the first conductor; and (4) a second conductor formed above the reversible resistance-switching element and the steering element. Numerous other aspects are provided. | 01-14-2010 |
20100006812 | CARBON-BASED RESISTIVITY-SWITCHING MATERIALS AND METHODS OF FORMING THE SAME - Memory devices including a carbon-based resistivity-switchable material, and methods of forming such memory devices are provided, the methods including introducing a processing gas into a processing chamber, wherein the processing gas includes a hydrocarbon compound and a carrier gas, and generating a plasma of the processing gas to deposit a layer of the carbon-based switchable material on a substrate within the processing chamber. Numerous additional aspects are provided. | 01-14-2010 |
20100012914 | CARBON-BASED RESISTIVITY-SWITCHING MATERIALS AND METHODS OF FORMING THE SAME - Methods of forming memory devices, and memory devices formed in accordance with such methods, are provided, the methods including forming a via above a first conductive layer, forming a nonconformal carbon-based resistivity-switchable material layer in the via and coupled to the first conductive layer; and forming a second conductive layer in the via, above and coupled to the nonconformal carbon-based resistivity-switchable material layer. Numerous other aspects are provided. | 01-21-2010 |
20100032638 | MEMORY CELL THAT INCLUDES A CARBON-BASED MEMORY ELEMENT AND METHODS OF FORMING THE SAME - Memory cells, and methods of forming such memory cells, are provided that include a carbon-based reversible resistivity switching material. In particular embodiments, methods in accordance with this invention form a memory cell by forming a carbon-based reversible resistance-switching material above a substrate, forming a carbon nitride layer above the carbon-based reversible resistance-switching material, and forming a barrier material above the carbon nitride layer using an atomic layer deposition process. Other aspects are also provided. | 02-11-2010 |
20100032639 | MEMORY CELL THAT INCLUDES A CARBON-BASED MEMORY ELEMENT AND METHODS OF FORMING THE SAME - Memory cells, and methods of forming such memory cells, are provided that include a steering element coupled to a carbon-based reversible resistivity switching material. In particular embodiments, methods in accordance with this invention form a single layer of a carbon-based reversible resistance switching material above a substrate, wherein the single layer of carbon material has a thickness greater than about three monolayers of the carbon-based reversible resistance switching material, and prior to forming an additional layer above the carbon layer, thermally anneal the carbon layer. Other aspects are also provided. | 02-11-2010 |
20100032640 | MEMORY CELL THAT INCLUDES A CARBON-BASED MEMORY ELEMENT AND METHODS OF FORMING THE SAME - Memory cells, and methods of forming such memory cells, are provided that include a carbon-based reversible resistivity switching material. In particular embodiments, methods in accordance with this invention form a memory cell by forming a layer of carbon material above a substrate, forming a barrier layer above the carbon layer, forming a hardmask layer above the barrier layer, forming a photoresist layer above the hardmask layer, patterning and developing the photoresist layer to form a photoresist region, patterning and etching the hardmask layer to form a hardmask region, and using an ashing process to remove the photoresist region while the barrier layer remains above the carbon layer. Other aspects are also provided. | 02-11-2010 |
20100032643 | MEMORY CELL THAT INCLUDES A CARBON-BASED MEMORY ELEMENT AND METHODS OF FORMING THE SAME - Memory cells, and methods of forming such memory cells, are provided that include a carbon-based reversible resistivity switching material. In particular embodiments, methods in accordance with this invention form a memory cell by (a) depositing a layer of the carbon material above a substrate; (b) doping the deposited carbon layer with a dopant; (c) depositing a layer of the carbon material over the doped carbon layer; and (d) iteratively repeating steps (b) and (c) to form a stack of doped carbon layers having a desired thickness. Other aspects are also provided. | 02-11-2010 |
20100038620 | INTEGRATION METHODS FOR CARBON FILMS IN TWO- AND THREE-DIMENSIONAL MEMORIES AND MEMORIES FORMED THEREFROM - Methods of forming memory cells are disclosed which include forming a pillar above a substrate, the pillar including a steering element and a memory element, and performing one or more etches vertically through the pillar to form multiple memory cells. Memory cells formed from such methods, as well as numerous other aspects are also disclosed. | 02-18-2010 |
20100038623 | METHODS AND APPARATUS FOR INCREASING MEMORY DENSITY USING DIODE LAYER SHARING - Methods of forming memory cells are disclosed which include forming a pillar above a substrate, the pillar including a steering element and a memory element, and performing one or more etches vertically through the memory element, but not the steering element, to form multiple memory cells that share a single steering element. Memory cells formed from such methods, as well as numerous other aspects are also disclosed. | 02-18-2010 |
20100102291 | CARBON-BASED MEMORY ELEMENTS EXHIBITING REDUCED DELAMINATION AND METHODS OF FORMING THE SAME - A method of forming a reversible resistance-switching metal-insulator-metal (“MIM”) stack is provided, the method including forming a first conducting layer comprising a degenerately doped semiconductor material, and forming a carbon-based reversible resistance-switching material above the first conducting layer. Other aspects are also provided. | 04-29-2010 |
20100108982 | ELECTRONIC DEVICES INCLUDING CARBON NANO-TUBE FILMS HAVING CARBON-BASED LINERS, AND METHODS OF FORMING THE SAME - Methods in accordance with this invention form a microelectronic structure by forming a carbon nano-tube (“CNT”) layer, and forming a carbon layer (“carbon liner”) above the CNT layer, wherein the carbon liner comprises: (1) a first portion disposed above and in contact with the CNT layer; and/or (2) a second portion disposed in and/or around one or more carbon nano-tubes in the CNT layer. Numerous other aspects are provided. | 05-06-2010 |
20100163824 | MODULATION OF RESISTIVITY IN CARBON-BASED READ-WRITEABLE MATERIALS - In a first aspect, a method of forming a memory cell is provided that includes (1) forming a metal-insulator-metal (“MIM”) stack above a substrate, the MIM stack including a carbon-based switching material having a resistivity of at least 1×10 | 07-01-2010 |
20100193916 | METHODS FOR INCREASED ARRAY FEATURE DENSITY - The embodiments generally relate to methods of making semiconductor devices, and more particularly, to methods for making semiconductor pillar structures and increasing array feature pattern density using selective or directional gap fill. The technique has application to a variety of materials and can be applied to making monolithic two or three-dimensional memory arrays. | 08-05-2010 |
20100327254 | Methods to improve electrode diffusions in two-terminal non-volatile memory devices - A non-volatile memory device includes a plurality of pillars, where each of the plurality of pillars contains a non-volatile memory cell containing a steering element and a storage element and at least one of a top corner or a bottom corner of each of the plurality of pillars is rounded. A method of making non-volatile memory device includes forming a stack of device layers, and patterning the stack to form a plurality of pillars, where each of the plurality of pillars contains a non-volatile memory cell that contains a steering element and a storage element, and where at least one of top corner or bottom corner of each of the plurality of pillars is rounded. | 12-30-2010 |
20110092077 | METHOD TO MINIMIZE WET ETCH UNDERCUTS AND PROVIDE PORE SEALING OF EXTREME LOW K (K<2.5) DIELECTRICS - Methods of processing films on substrates are provided. In one aspect, the methods comprise treating a patterned low dielectric constant film after a photoresist is removed form the film by depositing a thin layer comprising silicon, carbon, and optionally oxygen and/or nitrogen on the film. The thin layer provides a carbon-rich, hydrophobic surface for the patterned low dielectric constant film. The thin layer also protects the low dielectric constant film from subsequent wet cleaning processes and penetration by precursors for layers that are subsequently deposited on the low dielectric constant film. | 04-21-2011 |
20110095257 | MEMORY CELL THAT INCLUDES A CARBON-BASED REVERSIBLE RESISTANCE SWITCHING ELEMENT COMPATIBLE WITH A STEERING ELEMENT, AND METHODS OF FORMING THE SAME - Memory cells, and methods of forming such memory cells, are provided that include a steering element coupled to a carbon-based reversible resistivity switching material that has an increased resistivity, and a switching current that is less than a maximum current capability of the steering element used to control current flow through the carbon-based reversible resistivity switching material. In particular embodiments, methods and apparatus in accordance with this invention form a steering element, such as a diode, having a first width, coupled to a reversible resistivity switching material, such as aC, having a second width smaller than the first width. | 04-28-2011 |
20110095258 | MEMORY CELL THAT INCLUDES A CARBON-BASED REVERSIBLE RESISTANCE SWITCHING ELEMENT COMPATIBLE WITH A STEERING ELEMENT, AND METHODS OF FORMING THE SAME - Memory cells, and methods of forming such memory cells, are provided that include a steering element coupled to a carbon-based reversible resistivity switching material that has an increased resistivity, and a switching current that is less than a maximum current capability of the steering element used to control current flow through the carbon-based reversible resistivity switching material. In particular embodiments, methods and apparatus in accordance with this invention form a steering element, such as a diode, having a first cross-sectional area, coupled to a reversible resistivity switching material, such as aC, having a region that has a second cross-sectional area smaller than the first cross-sectional area. | 04-28-2011 |
20110204313 | Electrode Diffusions in Two-Terminal Non-Volatile Memory Devices - A non-volatile memory device includes a plurality of pillars, where each of the plurality of pillars contains a non-volatile memory cell containing a steering element and a storage element and at least one of a top corner or a bottom corner of each of the plurality of pillars is rounded. A method of making non-volatile memory device includes forming a stack of device layers, and patterning the stack to form a plurality of pillars, where each of the plurality of pillars contains a non-volatile memory cell that contains a steering element and a storage element, and where at least one of top corner or bottom corner of each of the plurality of pillars is rounded. | 08-25-2011 |
20110204474 | MEMORY CELL WITH SILICON-CONTAINING CARBON SWITCHING LAYER AND METHODS FOR FORMING THE SAME - In a first aspect, a method of forming a memory cell is provided that includes (1) forming a metal-insulator-metal (MIM) stack, the MIM stack including (a) a first conductive carbon layer; (b) a low-hydrogen, silicon-containing carbon layer above the first conductive carbon layer; and (c) a second conductive carbon layer above the low-hydrogen, silicon-containing carbon layer; and (2) forming a steering element coupled to the MIM stack. Numerous other aspects are provided. | 08-25-2011 |
20110254126 | MEMORY CELL WITH CARBON SWITCHING MATERIAL HAVING A REDUCED CROSS-SECTIONAL AREA AND METHODS FOR FORMING THE SAME - In a first aspect, a method of forming a metal-insulator-metal (“MIM”) stack is provided, the method including: (1) forming a dielectric material having an opening and a first conductive carbon layer within the opening; (2) forming a spacer in the opening; (3) forming a carbon-based switching material on a sidewall of the spacer; and (4) forming a second conductive carbon layer above the carbon-based switching material. A ratio of a cross sectional area of the opening in the dielectric material to a cross sectional area of the carbon-based switching material on the sidewall of the spacer is at least 5. Numerous other aspects are provided. | 10-20-2011 |
20110278529 | MEMORY EMPLOYING DIAMOND-LIKE CARBON RESISTIVITY-SWITCHABLE MATERIAL AND METHODS OF FORMING THE SAME - In a first aspect, a method of forming a memory cell having a diamond like carbon (DLC) resistivity-switching material is provided that includes (1) forming a metal-insulator-metal (MIM) stack that includes (a) a first conductive layer; (b) a DLC switching layer above the first conductive layer; and (c) a second conductive layer above the DLC switching layer; (2) forming a compressive dielectric liner along a sidewall of the MIM stack; and (3) forming a steering element coupled to the MIM stack. Numerous other aspects are provided. | 11-17-2011 |
20120135603 | METHODS FOR INCREASED ARRAY FEATURE DENSITY - The embodiments generally relate to methods of making semiconductor devices, and more particularly, to methods for making semiconductor pillar structures and increasing array feature pattern density using selective or directional gap fill. The technique has application to a variety of materials and can be applied to making monolithic two or three-dimensional memory arrays. | 05-31-2012 |
20130094278 | Non-Volatile Memory Cell Containing an In-Cell Resistor - A non-volatile memory cell includes a first electrode, a steering element, a metal oxide storage element located in series with the steering element, a dielectric resistor located in series with the steering element and the metal oxide storage element, and a second electrode. | 04-18-2013 |
20130183829 | METHODS FOR INCREASED ARRAY FEATURE DENSITY - A method is provided that includes forming completely distinct first features above a substrate, forming sidewall spacers on the first features, filling spaces between adjacent sidewall spacers with filler features, and removing the sidewall spacers. Numerous other aspects are provided. | 07-18-2013 |
20130313503 | METHODS AND APPARATUS FOR INCREASING MEMORY DENSITY USING DIODE LAYER SHARING - A memory is described that includes a shared diode layer and a memory element coupled to the diode layer. The memory element has a pie slice-shape, and includes a sidewall having a carbon film thereon. Numerous other aspects are also disclosed. | 11-28-2013 |
20140252298 | METHODS AND APPARATUS FOR METAL OXIDE REVERSIBLE RESISTANCE-SWITCHING MEMORY DEVICES - In some aspects, a memory cell is provided that includes a first conducting layer, a reversible resistance switching element above the first conducting layer, a second conducting layer above the reversible resistance switching element, and a liner disposed about a sidewall of the reversible resistance switching element. The reversible resistance switching element includes a first metal oxide material, and the liner includes the first metal oxide material. Numerous other aspects are provided. | 09-11-2014 |