| Patent application number | Description | Published |
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| 20120165833 | NOVEL TWEEZER HEAD FOR EPILATION - The invention relates to an epilation head for an epilation device, in particular for plucking hair from human skin having a rotating cylinder rotating around a rotational axis having a number of plucking units for grasping and plucking out hair, wherein each plucking unit comprises a movable clamping unit, a stationary clamping unit, wherein the movable clamping unit and the stationary clamping unit form a closable plucking gap, characterized in that the movable clamping unit has a hair guiding device which is associated with the movable clamping unit. | 06-28-2012 |
| 20120165834 | NOVEL TWEEZER ARRANGEMENT FOR AN EPILATION HEAD - The invention relates to a motor-driven epilation head for an epilation device for plucking hairs of the human skin. Specifically, the invention relates to an epilation head having a rotation cylinder that can be rotated about a rotation axis and comprises a plurality of plucking units for capturing and plucking the hairs. Each plucking unit comprises a first clamping element, a second clamping element and a third clamping element, wherein the first clamping element together with the second clamping element forms a first closeable plucking gap and the second clamping element together with the third clamping element forms a second closeable plucking gap. The first and the second clamping element are movably mounted and can be jointly actuated by means of an actuation element in order to close the first and the second plucking gap. The first and the second clamping element move in the same direction. | 06-28-2012 |
| 20120165835 | TWEEZER HEAD FOR EPILATION - The invention relates to an epilation head for an epilation device, in particular for plucking hair from human skin having a rotating cylinder and rotating around a rotational axis, the rotating cylinder having a number of plucking units for grasping and plucking out hair and having a skin oriented surface, wherein each plucking unit comprises a movable clamping unit, a stationary clamping unit, wherein the movable clamping unit and the stationary clamping unit form a closable plucking gap and characterized in that the movable clamping units have a skin contacting surface and the total area of the skin contacting surfaces of the movable clamping units is greater than 5% of the area of the skin oriented surface. | 06-28-2012 |
| Patent application number | Description | Published |
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| 20110291292 | Selective Shrinkage of Contact Elements in a Semiconductor Device - In sophisticated semiconductor devices, the contact elements connecting to active semiconductor regions having formed thereabove closely spaced gate electrode structures may be provided on the basis of a liner material so as to reduce the lateral width of the contact opening, while, on the other hand, non-critical contact elements may be formed on the basis of non-reduced lateral dimensions. To this end, at least a first portion of the critical contact element is formed and provided with a liner material prior to forming the non-critical contact element. | 12-01-2011 |
| 20120001323 | Semiconductor Device Including Ultra Low-K (ULK) Metallization Stacks with Reduced Chip-Package Interaction - In complex semiconductor devices, sophisticated ULK materials may be used in metal line layers in combination with a via layer of enhanced mechanical stability by increasing the amount of dielectric material of superior mechanical strength. Due to the superior mechanical stability of the via layers, reflow processes for directly connecting the semiconductor die and a package substrate may be performed on the basis of a lead-free material system without unduly increasing yield losses. | 01-05-2012 |
| 20120001330 | Semiconductor Device Comprising Through Hole Vias Having a Stress Relaxation Mechanism - In a semiconductor device, through hole vias or through silicon vias (TSV) may be formed so as to include an efficient stress relaxation mechanism, for instance provided on the basis of a stress relaxation layer, in order to reduce or compensate for stress forces caused by a pronounced change in volume of the conductive fill materials of the through hole vias. In this manner, the high risk of creating cracks and delamination events in conventional semiconductor devices may be significantly reduced. | 01-05-2012 |
| 20120001343 | Sophisticated Metallization Systems in Semiconductors Formed by Removing Damaged Dielectric Surface Layers After Forming the Metal Features - In sophisticated semiconductor devices, densely packed metal line layers may be formed on the basis of an ultra low-k dielectric material, wherein corresponding modified portions of increased dielectric constant may be removed in the presence of the metal lines, for instance, by means of a selective wet chemical etch process. Consequently, the metal lines may be provided with desired critical dimensions without having to take into consideration a change of the critical dimensions upon removing the modified material portion, as is the case in conventional strategies. | 01-05-2012 |
| 20120028470 | Increasing Robustness of a Dual Stress Liner Approach in a Semiconductor Device by Applying a Wet Chemistry - In a dual stress liner approach, unwanted material provided between closely spaced gate electrode structures may be removed to a significant degree on the basis of a wet chemical etch process, thereby reducing the risk of creating patterning-related irregularities. Consequently, the probability of contact failures in sophisticated interlayer dielectric material systems formed on the basis of a dual stress liner approach may be reduced. | 02-02-2012 |
| 20120153405 | Semiconductor Device Comprising a Contact Structure with Reduced Parasitic Capacitance - In sophisticated semiconductor devices, at least a portion of the interlayer dielectric material of the contact level may be provided in the form of a low-k dielectric material which may, in some illustrative embodiments, be accomplished on the basis of a replacement gate approach. Hence, superior electrical performance, for instance with respect to the parasitic capacitance, may be accomplished. | 06-21-2012 |
| 20120161242 | ENHANCEMENT OF ULTRAVIOLET CURING OF TENSILE STRESS LINER USING REFLECTIVE MATERIALS - A method of manufacturing a semiconductor device begins by fabricating an n-type metal oxide semiconductor (NMOS) transistor structure on a semiconductor wafer. The method continues by forming an optically reflective layer overlying the NMOS transistor structure, forming a layer of tensile stress inducing material overlying the optically reflective layer, and curing the layer of tensile stress inducing material by applying ultraviolet radiation. Some of the ultraviolet radiation directly radiates the layer of tensile stress inducing material and some of the ultraviolet radiation radiates the layer of tensile stress inducing material by reflecting from the optically reflective layer. | 06-28-2012 |
