Patent application number | Description | Published |
20080287044 | Method of transferring a wafer - A method of transferring a wafer is disclosed. The method comprises providing a pedestal and at least one spray orifice extending through the pedestal; disposing a wafer above the pedestal using a first robot, wherein the wafer has a first surface and a second surface, the first surface faces the pedestal, a fluid is sprayed onto the first surface simultaneously to avoid a contact of the first surface with the pedestal, and the fluid contains a charge-forming chemical substance dissolved therein; and taking the wafer using a robot for delivery. Due to the charge-forming chemical substance dissolved in the fluid, the waterfall effect to cause discharge damage on the wafer is avoided in the spraying of the fluid. | 11-20-2008 |
20080305609 | METHOD FOR FORMING A SEAMLESS SHALLOW TRENCH ISOLATION - A method for fabricating a seamless shallow trench isolation includes providing a semiconductor substrate having at least a shallow trench that is filled by a dielectric layer with a seam, forming a dielectric layer filling the shallow trench with a seam, forming at least one healing layer on the dielectric layer, and performing a low-temperature steam annealing process to eliminate the seam. | 12-11-2008 |
20090065944 | REWORKED INTEGRATED CIRCUIT DEVICE AND REWORKING METHOD THEREOF - Reworking method for removing defects on integrated circuit device is disclosed. An integrated circuit is provided, which has a substrate, a conductive material layer formed in the substrate, a dielectric layer formed on the substrate, at least a contact plug embedded in the dielectric layer, and a conductive layer contacting to the contact plug formed on the dielectric layer. A defect is found in the conductive layer and the reworking method is performed, including an etch back process, a chemical mechanical polishing process, and a deposition process. The reworking method removes the prior formed conductive layer and reform a conductive layer to prevent the integrated circuit from being scraped. | 03-12-2009 |
20090117740 | FLUID-CONFINING APPARATUS AND METHOD OF OPERATING THE SAME - The fluid-confining apparatus includes at least a substrate holder, at least a confining fluid supplying tube, at least a confining fluid recovering tube, at least a process fluid supplying tube, and at least a process fluid recovering tube. The process fluid supplying tube supplies at least a process fluid, and makes the process fluid contact with at least a treatment region of a wafer. The confining fluid supplying tube continuity supplies at least a confining fluid. The confining fluid does not dissolve the process fluid. The flowing confining fluid can contact with at least a non-treatment region of the wafer, and confines the process fluid into a predetermined space. | 05-07-2009 |
20090117835 | Expandable polishing platen device - An expandable polishing platen device is disclosed, in which a polishing platen top includes a plurality of separate platen top sections. When the polishing platen device is not in an expanded configuration, the polishing platen top has a surface constructed from the surfaces of a first group of platen top sections. When the polishing platen device is in an expanded configuration, the polishing platen top has a surface constructed from the surfaces of the first group of platen top sections and a second group of platen top sections. Polishing pads are bonded to the surface of each of platen top sections respectively and may include various types. Therefore, the expandable polishing platen device of the present invention may have versatile polishing functions. | 05-07-2009 |
20090123877 | METHOD FOR FORMING AN OPENING OF NANO-METER SCALE - A method for forming an opening of nano-meter scale includes providing a substrate with a material layer, and later forming a first part of the opening and then forming a second part of the opening in the material layer. At least one of the first part and the second part of the opening is formed by imprint. | 05-14-2009 |
20090200161 | FLUID-CONFINING APPARATUS AND METHOD OF OPERATING THE SAME - The fluid-confining apparatus includes at least a substrate holder, at least a confining fluid supplying tube, at least a confining fluid recovering tube, at least a process fluid supplying tube, and at least a process fluid recovering tube. The process fluid supplying tube supplies at least a process fluid, and makes the process fluid contact with at least a treatment region of a wafer. The confining fluid supplying tube continuity supplies at least a confining fluid. The confining fluid does not dissolve the process fluid. The flowing confining fluid can contact with at least a non-treatment region of the wafer, and confines the process fluid into a predetermined space. | 08-13-2009 |
20100065931 | MICRO-ELECTROMECHANICAL SYSTEM MICROPHONE STRUCTURE AND METHOD OF FABRICATING THE SAME - A method of fabricating a micro-electromechanical system microphone structure is disclosed. First, a substrate defining a MEMS region and a logic region is provided, and a surface of the substrate has a dielectric layer thereon. Next, at least one metal interconnect layer is formed on the dielectric layer in the logic region, and at least one micro-machined metal mesh is simultaneously formed in the dielectric layer of the MEMS region. Therefore, the thickness of the MEMS microphone structure can be effectively reduced. | 03-18-2010 |
20100068832 | METHOD FOR THE PROTECTION OF INFORMATION IN MULTI-PROJECT WAFERS - A method for the protection of the information in a multi-project wafer (MPW) is provided. First, a substrate is provided. There are a first die and a second die on the substrate. Second, a first wafer process is performed on the substrate. The first wafer process includes performing a wafer procedure by using a non-destructive energy source and destroying the first die by using a destructive energy source. Later, a second wafer process is performed to finish the second die. | 03-18-2010 |
20100133649 | Contact efuse structure, method of making a contact efuse device containing the same, and method of making a read only memory containing the same - A contact efuse structure includes a silicon layer and a contact contacting the silicon layer with one end. When a voltage is applied to the contact, a void is formed at the end of the contact, and thus the contact is open. Such structure may be utilized in an efuse device or a read only memory. A method of making a contact efuse device and a method of making a read only memory are also disclosed. | 06-03-2010 |
20100144156 | METHOD TO INTEGRATE MICRO ELECTRO MECHANICAL SYSTEM AND CMOS IMAGE SENSOR - A method to integrate a micro electro mechanical system and a CMOS image sensor is disclosed. First a substrate is provided. The substrate includes a micro electro mechanical system (MEMS) region and a CMOS image sensor (CIS) region. The micro electro mechanical system region includes a micro electro mechanical system component and the CMOS image sensor region includes a CMOS image sensor element. Second, an etching procedure is performed on the substrate to form a micro electro mechanical system trench and a CMOS image sensor trench. The etching procedure includes at least a dry etching and at least a wet etching. | 06-10-2010 |
20100148283 | INTEGRATED STRUCTURE OF MEMS DEVICE AND CMOS IMAGE SENSOR DEVICE AND FABRICATING METHOD THEREOF - An integrated structure of MEMS device and CIS device and a fabricating method thereof includes providing a substrate having a CIS region and a MEMS region defined therein with a plurality of CIS devices positioned in the CIS region; performing a multilevel interconnect process to form a multilevel interconnect structure in the CIS region and the MEMS region and a micro-machined mesh metal in the MEMS region on a front side of the substrate; performing a first etching process to form a chamber in MEMS region in the front side of the substrate; forming a first mask pattern and a second mask pattern respectively in the CIS region and the MEMS region on a back side of the substrate; and performing a second etching process to form a plurality of vent holes connecting to the chamber on the back side of the substrate through the second mask pattern. | 06-17-2010 |
20100270628 | MULTIFUNCTION MENS ELEMENT AND INTEGRATED METHOD FOR MAKING MOS AND MULTIFUNCTION MENS - A multifunction MENS element includes a first cantilever, a second cantilever and a MENS component. The first cantilever, the second cantilever and the MENS component together form a MENS structure. The MENS component includes an inductor device. | 10-28-2010 |
20100289066 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A semiconductor device is disclosed. The semiconductor device includes: a first electrode, disposed over a first region of a substrate; and a conductive layer, disposed over the substrate, including a second electrode disposed above the first electrode, wherein the second electrode comprises a mesh main part having a plurality of openings, and a plurality of extending parts, wherein the extending parts are connected to the mesh main part at periphery of the openings and extend toward a surface of the first electrode. | 11-18-2010 |
20110006350 | INTEGRATED STRUCTURE OF MEMS DEVICE AND CMOS IMAGE SENSOR DEVICE - An integrated structure of MEMS device and CIS device and a fabricating method thereof includes providing a substrate having a CIS region and a MEMS region defined therein with a plurality of CIS devices positioned in the CIS region; performing a multilevel interconnect process to form a multilevel interconnect structure in the CIS region and the MEMS region and a micro-machined mesh metal in the MEMS region on a front side of the substrate; performing a first etching process to form a chamber in MEMS region in the front side of the substrate; forming a first mask pattern and a second mask pattern respectively in the CIS region and the MEMS region on a back side of the substrate; and performing a second etching process to form a plurality of vent holes connecting to the chamber on the back side of the substrate through the second mask pattern. | 01-13-2011 |
20110024851 | MICRO-ELECTROMECHANICAL SYSTEM MICROPHONE STRUCTURE - A method of fabricating a micro-electromechanical system microphone structure is disclosed. First, a substrate defining a MEMS region and a logic region is provided, and a surface of the substrate has a dielectric layer thereon. Next, at least one metal interconnect layer is formed on the dielectric layer in the logic region, and at least one micro-machined metal mesh is simultaneously formed in the dielectric layer of the MEMS region. Therefore, the thickness of the MEMS microphone structure can be effectively reduced. | 02-03-2011 |
20110027929 | METHOD OF FABRICATING MICRO-ELECTROMECHANICAL SYSTEM MICROPHONE STRUCTURE - A method of fabricating a micro-electromechanical system microphone structure is disclosed. First, a substrate defining a MEMS region and a logic region is provided, and a surface of the substrate has a dielectric layer thereon. Next, at least one metal interconnect layer is formed on the dielectric layer in the logic region, and at least one micro-machined metal mesh is simultaneously formed in the dielectric layer of the MEMS region. Therefore, the thickness of the MEMS microphone structure can be effectively reduced. | 02-03-2011 |
20110076129 | Method of transferring a wafer - A method of transferring a wafer is disclosed. The method comprises providing a pedestal and at least one spray orifice extending through the pedestal; disposing a wafer above the pedestal using a first robot, wherein the wafer has a first surface and a second surface, the first surface faces the pedestal, a fluid is sprayed onto the first surface simultaneously to avoid a contact of the first surface with the pedestal, and the fluid contains a charge-forming chemical substance dissolved therein; and taking the wafer using a robot for delivery. Due to the charge-forming chemical substance dissolved in the fluid, the waterfall effect to cause discharge damage on the wafer is avoided in the spraying of the fluid. | 03-31-2011 |
20120043199 | FLUID-CONFINING APPARATUS AND METHOD OF OPERATING THE SAME - The fluid-confining apparatus includes at least a substrate holder, at least a confining fluid supplying tube, at least a confining fluid recovering tube, at least a process fluid supplying tube, and at least a process fluid recovering tube. The process fluid supplying tube supplies at least a process fluid, and makes the process fluid contact with at least a treatment region of a wafer. The confining fluid supplying tube continuity supplies at least a confining fluid. The confining fluid does not dissolve the process fluid. The flowing confining fluid can contact with at least a non-treatment region of the wafer, and confines the process fluid into a predetermined space. | 02-23-2012 |