Hui Chan
Hui Chan Kim, Daejeon KR
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20100168281 | Spalling-Preventing Composite Material Composed of Fiber and Powder Having Different Diameters and Melting Points, and High-Strength Refractory Concrete Comprising the Same - Disclosed herein are a spalling-preventing composite material composed of fiber and powder, which have different diameters and melting points so as to be capable of realizing the effect of preventing spalling of high-strength concrete and the effect of improving the fluidity of concrete, and a high-strength refractory concrete comprising the spalling-preventing material. The composite material for preventing spalling of high-strength concrete is composed of powder and fiber at 1:1-3, wherein the powder is a polymer powder having a diameter of 0.10-0.5 mm and a melting point of 110-150° C., and the fiber is a conjugate fiber including a first fiber having a diameter of 0.05-0.10 mm, a length of 5-25 mm and a melting point of 150-190° C., and a second fiber having a diameter of 0.01-0.05 mm, a length of 5-25 mm and a melting point of 190-250° C., the first fiber being a polypropylene fiber, and the second fiber being a nylon fiber or a polyvinyl alcohol fiber. | 07-01-2010 |
20140179952 | CATALYST FOR REDUCTIVE AMINATION-REACTION AND USES THEREOF - The present invention relates to a catalyst for reductive amination-reaction, and uses thereof. The catalyst according to the present invention can show high amine conversion rate because it can maintain the catalytic activity even in the presence of moisture especially while maintaining the balance of dehydrogenation and hydrogenation reaction basically. Accordingly, the catalyst can be usefully used for preparing a polyetheramine compound through reductive amination-reaction not only in a continuous preparation process but also in a batch preparation process, irrespective of the existence of moisture. | 06-26-2014 |
Hui Chan Yun, Kyeongsangnam-Do KR
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20100320573 | ORGANOSILANE POLYMERS, HARDMASK COMPOSITIONS INCLUDING THE SAME AND METHODS OF PRODUCING SEMICONDUCTOR DEVICES USING ORGANOSILANE HARDMASK COMPOSITIONS - Provided herein, according to some embodiments of the invention, are organosilane polymers prepared by reacting organosilane compounds including | 12-23-2010 |
Hui Chan Yun, Uiwang-Si KR
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20100167203 | Resist underlayer composition and method of manufacturing semiconductor integrated circuit device using the same - A resist underlayer composition and a method of manufacturing a semiconductor integrated circuit device, the composition including a solvent and an organosilane polymer, the organosilane polymer being a condensation polymerization product of at least one first compound represented by Chemical Formulae 1 and 2 and at least one second compound represented by Chemical Formulae 3 to 5. | 07-01-2010 |
20100279509 | Silicon-based hardmask composition and process of producing semiconductor integrated circuit device using the same - A silicon-based hardmask composition, including an organosilane polymer represented by Formula 1: | 11-04-2010 |
20110129981 | FILLER FOR FILLING A GAP AND METHOD FOR MANUFACTURING SEMICONDUCTOR CAPACITOR USING THE SAME - A filler for filling a gap includes a hydrogenated polysiloxazane having an oxygen content of about 0.2 to about 3 wt %. A chemical structure of the hydrogenated polysiloxazane includes first, second, and third moieties represented by the following respective Chemical Formulas 1-3: | 06-02-2011 |
20120164382 | COMPOSITION FOR FORMING A SILICA LAYER, METHOD OF MANUFACTURING THE COMPOSITION, SILICA LAYER PREPARED USING THE COMPOSITION, AND METHOD OF MANUFACTURING THE SILICA LAYER - A composition for forming a silica layer, a method of manufacturing the composition, a silica layer prepared using the composition, and a method of manufacturing the silica layer, the composition including hydrogenated polysilazane, hydrogenated polysiloxazane, or a combination thereof, wherein a concentration of a sum of hydrogenated polysilazane and hydrogenated polysiloxazane having a weight average molecular weight, reduced to polystyrene, of greater than or equal to about 50,000 is about 0.1 wt % or less, based on a total amount of the hydrogenated polysilazane and hydrogenated polysiloxazane. | 06-28-2012 |
20120177829 | COMPOSITION FOR FORMING SILICA BASED INSULATING LAYER, METHOD FOR MANUFACTURING COMPOSITION FOR FORMING SILICA BASED INSULATING LAYER, SILICA BASED INSULATING LAYER AND METHOD FOR MANUFACTURING SILICA BASED INSULATING LAYER - A composition for forming silica-based insulation layer includes a hydrogenated polysiloxazane including a moiety represented by the following Chemical Formula 1 and a moiety represented by the following Chemical Formula 2, and having a chlorine concentration of about 1 ppm or less: | 07-12-2012 |
20120267766 | RESIST UNDERLAYER COMPOSITION AND PROCESS OF PRODUCING INTEGRATED CIRCUIT DEVICES USING THE SAME - A resist underlayer composition includes a solvent and an organosilane condensation polymerization product, the organosilane condensation polymerization product including about 40 to about 80 mol % of a structural unit represented by the following Chemical Formula 1, | 10-25-2012 |
20120270143 | RESIST UNDERLAYER COMPOSITION AND METHOD OF MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICES USING THE SAME - A resist underlayer composition, including a solvent, and an organosilane condensation polymerization product including about 10 to about 40 mol % of a structural unit represented by Chemical Formula 1: | 10-25-2012 |
20120282776 | PHOTORESIST UNDERLAYER COMPOSITION AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE BY USING THE SAME - A photoresist underlayer composition includes a solvent, and a polysiloxane resin represented by Chemical Formula 1: | 11-08-2012 |
20130017662 | FILLER FOR FILLING A GAP, METHOD OF PREPARING THE SAME AND METHOD OF MANUFACTURING SEMICONDUCTOR CAPACITOR USING THE SAMEAANM PARK; Eun-SuAACI Uiwang-siAACO KRAAGP PARK; Eun-Su Uiwang-si KRAANM Kim; Bong-HwanAACI Uiwang-siAACO KRAAGP Kim; Bong-Hwan Uiwang-si KRAANM Lim; Sang-HakAACI Uiwang-siAACO KRAAGP Lim; Sang-Hak Uiwang-si KRAANM Kwak; Taek-SooAACI Uiwang-siAACO KRAAGP Kwak; Taek-Soo Uiwang-si KRAANM Bae; Jin-HeeAACI Uiwang-siAACO KRAAGP Bae; Jin-Hee Uiwang-si KRAANM Yun; Hui-ChanAACI Uiwang-siAACO KRAAGP Yun; Hui-Chan Uiwang-si KRAANM Kim; Sang-KyunAACI Uiwang-siAACO KRAAGP Kim; Sang-Kyun Uiwang-si KRAANM Lee; Jin-WookAACI Uiwang-siAACO KRAAGP Lee; Jin-Wook Uiwang-si KR - A filler for filling a gap includes a compound represented by the following Chemical Formula 1. | 01-17-2013 |
20140346391 | POLYSILOXANE HYDROXIDE THIN-FILM RINSE SOLUTION, AND POLYSILOOXAZINE HYDROXIDE THIN-FILM PATTERN-FORMING METHOD USING THE SAME - Provided is a rinse solution for a hydrogenated polysiloxazane thin film including an additive selected from an alcohol-based solvent, an ester-based solvent, a silanol-based solvent, an alkoxysilane-based solvent, an alkylsilazane-based solvent, and a combination thereof in an amount of 0.01 wt % to 7 wt % based on the total amount of the rinse solution. | 11-27-2014 |
Hui Chan Yun, Ulsan KR
Hui Chan Yun, Suwon-Si KR
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20150041959 | HARDMASK COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PROCESS FOR PRODUCING A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE, AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE - A hardmask composition for forming a resist underlayer film, a process for producing a semiconductor integrated circuit device, and a semiconductor integrated circuit device, the hardmask composition including an organosilane polymer, a stabilizer, the stabilizer including methyl acetoacetate, ethyl-2-ethylacetoacetate, nonanol, decanol, undecanol, dodecanol, acetic acid, phenyltrimethoxysilane, diphenylhexamethoxydisiloxane, diphenylhexaethoxydisiloxane, dioctyltetramethyldisiloxane, tetramethyldisiloxane, decamethyltetrasiloxane, dodecamethylpentasiloxane, hexamethyldisiloxane, or mixtures thereof, and a solvent, wherein the solvent includes acetone, tetrahydrofuran, benzene, toluene, diethyl ether, chloroform, dichloromethane, ethyl acetate, propylene glycol methyl ether acetate, propylene glycol ethyl ether acetate, propylene glycol propyl ether acetate, ethyl lactate, γ butyrolactone, methyl isobutyl ketone, or mixtures thereof, the solvent is present in an amount of about 70 to about 99.9% by weight, based on a total weight of the composition, and the stabilizer is present in an amount of about 0.0001 to about 3.0% by weight, based on a total weight of the composition. | 02-12-2015 |