Patent application number | Description | Published |
20080239277 | Method of forming a substrate for use in calibrating a metrology tool, calibration substrate and metrology tool calibration method - The present invention provides a method for forming a substrate for use in calibrating a metrology tool in order to compensate for orientation-dependent variations within the metrology tool. | 10-02-2008 |
20080279442 | Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method - A method of measuring a property of a substrate includes generating a patterned mask configured to cause a radiation beam passing through the mask to acquire the pattern, simulating radiating the substrate with a patterned radiation beam that has been patterned using the mask to obtain a simulated pattern, determining at least one location of the simulated pattern that is prone to patterning errors, and irradiating the substrate with the patterned radiation beam using a lithographic process. The method also includes measuring an accuracy of at least one property of the at least one location of the pattern on the substrate that has been determined as being prone to patterning errors, and adjusting the lithographic process according to the measuring. | 11-13-2008 |
20090094005 | Method of Optimizing a Model, a Method of Measuring a Property, A Device Manufacturing Method, a Spectrometer and a Lithographic Apparatus - A set of parameters used in a model of a spectrometer includes free parameters and fixed parameters. A first set of values for the parameters is set and the model is used to generate a first spectrum. A value of one of the fixed parameters is changed and a second spectrum is generated. An inverse of the model of the spectrometer is then applied to the second spectrum to generate a set of values for the parameters, the values being the same as the first set of values except for one or more of the free parameters. If the free parameter has significantly changed the fixed parameter is designated a free parameter. | 04-09-2009 |
20090135424 | Inspection Method and Apparatus, Lithographic Apparatus, Lithographic Processing Cell and Device Manufacturing Method for Determining A Parameter of a Target Pattern - In a method for determining a structure parameter of a target pattern, a first series of calibration spectra are determined from at least one reference pattern, each spectra being determined using a different known value of at least one structure parameter of the respective reference pattern. The first series of calibration spectra does not take into account parameters of an apparatus used to produce the reference pattern. A representation of each of the first series calibration spectra is stored in a central library. A second series of calibration spectra corresponding to at least one of the stored spectra for a target spectrum is determined using the parameters of the apparatus for measuring the target spectrum. A measured target spectrum is produced by directing a beam of radiation onto the target pattern. The measured target spectrum and the second series of calibration spectra are compared, where this comparison is used to derive a value for the structure parameter of the target pattern. | 05-28-2009 |
20100201963 | Inspection Apparatus, Lithographic Apparatus, Lithographic Processing Cell and Inspection Method - For angular resolved spectrometry a radiation beam is used having an illumination profile having four quadrants is used. The first and third quadrants are illuminated whereas the second and fourth quadrants aren't illuminated. The resulting pupil plane is thus also divided into four quadrants with only the zeroth order diffraction pattern appearing in the first and third quadrants and only the first order diffraction pattern appearing in the second and third quadrants. | 08-12-2010 |
20110026032 | Method of Assessing a Model of a Substrate, an Inspection Apparatus and a Lithographic Apparatus - A method of assessing a model of a substrate is presented. A scatterometry measurement is taken using radiation at a first wavelength. The wavelength of the radiation is then changed and a further scatterometry measurement taken. If the scatterometry measurements are consistent across a range of wavelengths then the model is sufficiently accurate. However, if the scatterometry measurements change as the wavelength changes then the model of the substrate is not sufficiently accurate. | 02-03-2011 |
20110027704 | Methods and Scatterometers, Lithographic Systems, and Lithographic Processing Cells - In a method of determining the focus of a lithographic apparatus used in a lithographic process on a substrate, the lithographic process is used to form a structure on the substrate, the structure having at least one feature which has an asymmetry in the printed profile which varies as a function of the focus of the lithographic apparatus on the substrate. A first image of the periodic structure is formed and detected while illuminating the structure with a first beam of radiation. The first image is formed using a first part of non-zero order diffracted radiation. A second image of the periodic structure is foamed and detected while illuminating the structure with a second beam of radiation. The second image is formed using a second part of the non-zero order diffracted radiation which is symmetrically opposite to the first part in a diffraction spectrum. The ratio of the intensities of the measured first and second portions of the spectra is determined and used to determine the asymmetry in the profile of the periodic structure and/or to provide an indication of the focus on the substrate. In the same instrument, an intensity variation across the detected portion is determined as a measure of process-induced variation across the structure. A region of the structure with unwanted process variation can be identified and excluded from a measurement of the structure. | 02-03-2011 |
20110085176 | Method, Inspection Apparatus and Substrate for Determining an Approximate Structure of an Object on a Substrate - A system and method determine an approximate structure of an object on a substrate. This may be applied in model based metrology of microscopic structures to assess critical dimension or overlay performance of a lithographic apparatus. A scatterometer is used to determine approximate structure of an object, such as a grating on a stack, on a substrate. The wafer substrate has an upper layer and an underlying layer. The substrate has a first scatterometry target region, including the grating on a stack object. The grating on a stack is made up of the upper and underlying layers. The upper layer is patterned with a periodic grating. The substrate further has a neighboring second scatterometry target region, where the upper layer is absent. The second region has just the unpatterned underlying layers. | 04-14-2011 |
20110231167 | Inspection Apparatus and Associated Method and Monitoring and Control System - A method, a lithographic apparatus, and a computer-readable medium provide a model of a metrology tool to determine a measurement error and/or covariance of particular parameters, such as the critical dimension and the sidewall angle, of a number of targets, such as gratings. The model can include at least one measurement error source. The method can include using a metrology tool to measure each target and using the model to determine the measurement error of the measured parameters of the particular target when measured by said metrology tool. The value of the measured parameter along with the corresponding measurement error is then determined in the metrology tool output for each particular target, and can be used in exposure focus and dose control in a lithographic process. | 09-22-2011 |
20110249244 | Lithographic Focus and Dose Measurement Using A 2-D Target - In order to determine whether an exposure apparatus is outputting the correct dose of radiation and its projection system is focusing the radiation correctly, a test pattern is used on a mask for printing a specific marker onto a substrate. This marker is then measured by an inspection apparatus, such as a scatterometer, to determine whether there are errors in focus and dose and other related properties. The test pattern is configured such that changes in focus and dose may be easily determined by measuring the properties of a pattern that is exposed using the mask. The test pattern may be a 2D pattern where physical or geometric properties, e.g., pitch, are different in each of the two dimensions. The test pattern may also be a one-dimensional pattern made up of an array of structures in one dimension, the structures being made up of at least one substructure, the substructures reacting differently to focus and dose and giving rise to an exposed pattern from which focus and dose may be determined. | 10-13-2011 |
20110249247 | Inspection Method and Apparatus, Lithographic Apparatus, Lithographic Processing Cell and Device Manufacturing Method - In order to determine whether an exposure apparatus is outputting the correct dose of radiation and a projection system of the exposure apparatus is focusing the radiation correctly, a test pattern is used on a mask for printing a specific marker onto a substrate. This marker may be measured by an inspection apparatus, such as, for example, a scatterometer to determine whether errors in focus, dose, and other related properties are present. The test pattern is arranged such that changes in focus and dose may be easily determined by measuring properties of a pattern that is exposed using the mask. The test pattern of the mask is arranged so that it gives rise to a marker pattern on the substrate surface. The marker pattern contains structures that have at least two measurable side wall angles. Asymmetry between side wall angles of a structure is related to focus (or defocus) of the exposure radiation from the exposure apparatus. The extent of defocus may thereby be determined by measuring an asymmetry in side wall angle of the printed marker pattern structures. | 10-13-2011 |
20110292365 | Calibration Method, Inspection Method and Apparatus, Lithographic Apparatus, and Lithographic Processing Cell - Disclosed are methods, apparatuses, and lithographic systems for calibrating an inspection apparatus. Radiation is projected onto a pattern in a target position of a substrate. By making a plurality of measurements of the pattern and comparing the measured first or higher diffraction orders of radiation reflected from the pattern of different measurements, a residual error indicative of the error in a scatterometer may be calculated. This error is an error in measurements of substrate parameters caused by irregularities of the scatterometer. The residual error may manifest itself as an asymmetry in the diffraction spectra. | 12-01-2011 |
20110304851 | Scatterometry Method and Measurement System for Lithography - Scatterometry method and apparatus are useful in a lithographic apparatus and device manufacturing. A back focal plane diffraction intensity image of a measurement projection system configured to project a radiation beam onto a target portion of a substrate is measured. A beam of radiation having a first wavelength is directed to the substrate. A diffraction image of a zeroth diffraction order and higher order diffraction from a diffraction structure in the substrate is provided. A first layer ( | 12-15-2011 |
20120044472 | Inspection Method for Lithography - A method is used to determine focus of a lithographic apparatus used in a lithographic process on a substrate. The lithographic process is used to form at least two periodic structures on the substrate. Each structure has at least one feature that has an asymmetry between opposing side wall angles that varies as a different function of the focus of the lithographic apparatus on the substrate. A spectrum produced by directing a beam of radiation onto the at least two periodic structures is measured and ratios of the asymmetries are determined. The ratios and a relationship between the focus and the side wall asymmetry for each structure is used to determine the focus of the lithographic apparatus on the substrate. | 02-23-2012 |
20120123748 | Method and Apparatus for Measuring a Structure on a Substrate, Computer Program Products for Implementing Such Methods and Apparatus - Diffraction models and scatterometry are used to reconstruct a model of a microscopic structure on a substrate. A plurality of candidate structures are defined, each represented by a plurality of parameters (p | 05-17-2012 |
20140139814 | Methods and Scatterometers, Lithographic Systems, and Lithographic Processing Cells - In a method of determining the focus of a lithographic apparatus used in a lithographic process on a substrate, the lithographic process is used to form a structure on the substrate, the structure having at least one feature which has an asymmetry in the printed profile which varies as a function of the focus of the lithographic apparatus on the substrate. A first image of the periodic structure is formed and detected while illuminating the structure with a first beam of radiation. The first image is formed using a first part of non-zero order diffracted radiation. A second image of the periodic structure is formed and detected while illuminating the structure with a second beam of radiation. The second image is formed using a second part of the non-zero order diffracted radiation which is symmetrically opposite to the first part in a diffraction spectrum. The ratio of the intensities of the measured first and second portions of the spectra is determined and used to determine the asymmetry in the profile of the periodic structure and/or to provide an indication of the focus on the substrate. In the same instrument, an intensity variation across the detected portion is determined as a measure of process-induced variation across the structure. A region of the structure with unwanted process variation can be identified and excluded from a measurement of the structure. | 05-22-2014 |
20140211185 | Inspection Apparatus, Lithographic Apparatus, Lithographic Processing Cell and Inspection Method - For angular resolved spectrometry a radiation beam is used having an illumination profile having four quadrants is used. The first and third quadrants are illuminated whereas the second and fourth quadrants aren't illuminated. The resulting pupil plane is thus also divided into four quadrants with only the zeroth order diffraction pattern appearing in the first and third quadrants and only the first order diffraction pattern appearing in the second and third quadrants. | 07-31-2014 |
20140247434 | Lithographic Focus and Dose Measurement Using A 2-D Target - In order to determine whether an exposure apparatus is outputting the correct dose of radiation and its projection system is focusing the radiation correctly, a test pattern is used on a mask for printing a specific marker onto a substrate. This marker is then measured by an inspection apparatus, such as a scatterometer, to determine whether there are errors in focus and dose and other related properties. The test pattern is configured such that changes in focus and dose may be easily determined by measuring the properties of a pattern that is exposed using the mask. The test pattern may be a 2D pattern where physical or geometric properties, e.g., pitch, are different in each of the two dimensions. The test pattern may also be a one-dimensional pattern made up of an array of structures in one dimension, the structures being made up of at least one substructure, the substructures reacting differently to focus and dose and giving rise to an exposed pattern from which focus and dose may be determined. | 09-04-2014 |