| Patent application number | Description | Published |
|---|
| 20090039952 | System and Method for Auto-Power Gating Synthesis for Active Leakage Reduction - A method includes parsing a design of the integrated circuit to define cells in automatic power gating power domains, automatically creating an automatic power gating power domain netlist from the parsed design of the integrated circuit, and placing and routing the automatic power gating power domain netlist to produce a layout for the integrated circuit. The parsing partitions a high-level power domain of the integrated circuit into one or more automatic power gating power domains. The automatic power gating power domains have substantially zero-cycle power up times, thereby enabling transparent operation. Furthermore, the automatic power gating power domains may be automatically inserted into designs of integrated circuits, thereby relieving integrated circuit designers of the task of inserting power domains and associated hardware and software. | 02-12-2009 |
| 20090177451 | APPARATUS AND METHOD FOR ACCELERATING SIMULATIONS AND DESIGNING INTEGRATED CIRCUITS AND OTHER SYSTEMS - A method of accelerating a Monte Carlo (MC) simulation for a system including a first component having a first input parameter and a second component having a second input parameter. The simulation model provided includes a first component model including a first model parameter corresponding to the first input parameter and a second component model having a second model parameter corresponding to the second input parameter. A first acceleration factor for the first component and a second acceleration factor for the second component are calculated based on at least the respective number of instances. A first scaled distribution is computed from the first distribution and a second scaled distribution is computed from the second distribution based on the respective acceleration factors. The MC simulation for the system is run, wherein values for the first model parameter value and second model parameter value are obtained based on the respective scaled distributions. | 07-09-2009 |
| 20090262588 | POWER SAVINGS WITH A LEVEL-SHIFTING BOUNDARY ISOLATION FLIP-FLOP (LSIFF) AND A CLOCK CONTROLLED DATA RETENTION SCHEME - An apparatus for providing active mode power reduction for circuits having data retention includes a master slave flip flop (MSFF) for latching a data input. An output level shifter (OLS), coupled to the MSFF, retains the data input in response to the MSFF being operable in an active power saving mode (APSM) to reduce power. The OLS operating in the APSM provides a level shifter output having a configurable voltage, thereby providing output isolation. A change in an operating mode of the MSFF between an active mode and the APSM is independent of a retention (RET) mode input. | 10-22-2009 |
| 20090303776 | STATIC RANDOM ACCESS MEMORY CELL - A six transistor (“6T) static random access memory (“SRAM”) cell and method for using the same are disclosed herein. The 6T SRAM cell includes a single read pass gate transistor and a single write pass gate transistor. The single read pass gate transistor is connected to a read bit line and a read word line. The single write pass gate transistor connected to a write bit line and a write word line. | 12-10-2009 |
| 20100103760 | Memory Power Management Systems and Methods - Memory power management systems and methods are provided. One embodiment of the present invention includes a memory power management system. The system comprises a first low dropout (LDO) regulator that provides an active operating voltage that is derived from a first supply voltage to power a memory array during an active mode. The system further comprises a second LDO regulator that provides a minimum memory retention voltage that is derived from a second supply voltage to power the memory array in a standby mode, wherein the second supply voltage also powers at least one peripheral circuit for reading from and/or writing to the memory array. | 04-29-2010 |
| 20100253387 | SYSTEM AND METHOD FOR AUTO-POWER GATING SYNTHESIS FOR ACTIVE LEAKAGE REDUCTION - A method includes parsing a design of the integrated circuit to define cells in automatic power gating power domains, automatically creating an automatic power gating power domain netlist from the parsed design of the integrated circuit, and placing and routing the automatic power gating power domain netlist to produce a layout for the integrated circuit. The parsing partitions a high-level power domain of the integrated circuit into one or more automatic power gating power domains. The automatic power gating power domains have substantially zero-cycle power up times, thereby enabling transparent operation. Furthermore, the automatic power gating power domains may be automatically inserted into designs of integrated circuits, thereby relieving integrated circuit designers of the task of inserting power domains and associated hardware and software. | 10-07-2010 |
| 20110007580 | LOCAL SENSING AND FEEDBACK FOR AN SRAM ARRAY - An integrated circuit having an SRAM array includes SRAM cells arranged in rows and columns, and a global read circuit connected to globally read SRAM cells corresponding to accessed rows and columns of the SRAM array. The SRAM array also includes a separate, local sense and feedback circuit connected to a local column of the SRAM array, wherein a sensing portion indicates a memory state of an SRAM cell in an accessed row of the local column and a feedback portion rewrites the memory state back into the SRAM cell. Additionally, a method of operating an integrated circuit having an SRAM array includes providing an SRAM cell in an addressed condition of the SRAM array. The method also includes locally sensing a current memory state of the SRAM cell and locally feeding back to the SRAM cell to retain the memory state during the addressed condition. | 01-13-2011 |
| 20110216619 | MEMORY POWER MANAGEMENT SYSTEMS AND METHODS - Memory power management systems and methods are provided. One embodiment of the present invention includes a memory power management system. The system comprises a first low dropout (LDO) regulator that provides an active operating voltage that is derived from a first supply voltage to power a memory array during an active mode. The system further comprises a second LDO regulator that provides a minimum memory retention voltage that is derived from a second supply voltage to power the memory array in a standby mode, wherein the second supply voltage also powers at least one peripheral circuit for reading from and/or writing to the memory array. | 09-08-2011 |
