Patent application number | Description | Published |
20120293251 | DOHERTY POWER AMPLIFIER AND IMPLEMENTATION METHOD THEREOF - A Doherty power amplifier and an implementation method thereof are disclosed. The Doherty power amplifier includes a carrier power amplifier circuit and a peak power amplifier circuit, wherein, the peak amplifier circuit is configured with a Radio Frequency (RF) switch for controlling turn-on of peak power amplifiers in the peak amplifier circuit; and a part or all of carrier power amplifiers in the carrier power amplifier circuit use GaN devices, and a part or all of the peak power amplifiers in the peak power amplifier circuit use LDMOS devices. | 11-22-2012 |
20120327540 | BASE STATION RADIO FREQUENCY SYSTEM AND METHOD FOR PROTECTING RADIO FREQUENCY POWER AMPLIFIER - A method is disclosed for protecting a radio frequency power amplifier applied in a base station radio frequency system. The method comprises: a protection detection circuit detecting a signal output by a transceiver and sending a turn-on control signal to a protection switch circuit when the signal is greater than a preset threshold; and the protection switch circuit receiving the turn-on control signal sent by the protection detection circuit and controlling its grounded connection based on the turn-on control signal. A base station radio frequency system is also disclosed comprising a transceiver and a radio frequency power amplifier connected to each other, a protection detection circuit and a protection switch circuit. Using the method and system, abnormal big signals with wide spectrum cannot enter the power amplifier, thereby achieving the object of protecting the power amplifier from being damaged. | 12-27-2012 |
20130099867 | APPARATUS FOR DOHERTY POWER AMPLIFIER AND METHOD FOR POWER AMPLIFICATION - The present invention discloses a Doherty power amplifier apparatus and a power amplification method. The apparatus includes an auxiliary power amplifier apparatus and a main power amplifier apparatus, the auxiliary power amplifier apparatus is used to amplify signal power by adopting a Laterally Diffused Metal Oxide Semiconductor (LDMOS) device; and the main power amplifier apparatus is used to amplify signal power by adopting a High Electron Mobility Transistors (HEMT) device. The present invention adopts the HEMT device as the main power amplifier. Compared with the existing Doherty power amplifier in which both the main power amplifier and the auxiliary power amplifier adopt LDMOS, with the present invention, the power amplifier efficiency of the main power amplifier in the Doherty power amplifier can be enhanced, thereby making the power amplifier efficiency of the whole Doherty power amplifier be substantially increased. | 04-25-2013 |
20130106517 | Power Amplifier Tube and Power Amplification Method | 05-02-2013 |
20130127527 | CONTROL METHOD, APPARATUS OF PEAK AMPLIFIER AND DOHERTY POWER AMPLIFIER - A control method and apparatus of a peak amplifier of a Doherty power amplifier are disclosed, wherein, the control apparatus includes a Radio Frequency (RF) switching circuit in a peak amplification branch of the Doherty power amplifier, which is used to control the turn-on and turn-off of the peak amplifier in the peak amplification branch. The method and apparatus avoid a disadvantage that the peak branch in the Doherty power amplifier is turned on ahead of time, thus reducing the power consumption of the peak power amplifier, and enhancing the mass efficiency of the whole power amplifier; and largely reducing the product expense and production expense of the power amplifier compared to the scheme of some manufacturers improving on-time of the peak power amplifier using complex digital circuits. | 05-23-2013 |
20130141166 | POWER AMPLIFIER TUBE AND POWER AMPLIFICATION METHOD - A power amplifier tube and a power amplification method are disclosed in the present invention. The power amplifier tube includes a high voltage heterojunction bipolar transistor (HVHBT) power amplifier tube core and a high electron mobility transistor (HEMT) power amplifier tube core, and the HVHBT power amplifier tube core and the HEMT power amplifier tube core are integrated in the same encapsulation. In the present invention, it should be configured as a Doherty amplifier, and the power tube is designed in a breakthrough combination manner of new power amplifier tube cores, compared with all the existing Doherty amplifiers which employ LDMOS power amplifier tube cores, the power amplification with high efficiency can be achieved on the basis of ensuring small volume of power amplifier tube. | 06-06-2013 |
20130214866 | POWER AMPLIFIER TUBE AND POWER AMPLIFICATION METHOD - The present invention discloses a power amplifier tube and a power amplification method, wherein, the power amplifier tube includes a High Voltage Heterojunction Bipolar Transistor (HVHBT) power amplifier die and a Lateral Double-Diffused Metal-Oxide Semiconductor (LDMOS) power amplifier die, and the HVHBT power amplifier die and the LDMOS power amplifier die are integrated in the same package. The present invention is applied to a Doherty amplifier, which designs a power tube by using a breakthrough new power amplifier die combination, and can achieve high efficient power amplification on the basis of ensuring a small volume of the power amplifier tube, compared with the existing Doherty amplifiers each of which uses the LDMOS power amplifier die. | 08-22-2013 |
20130222065 | DOHERTY POWER AMPLIFIER APPARATUS AND POWER AMPLIFICATION METHOD - A Doherty power amplifier apparatus and a power amplification method are disclosed in the present invention. The apparatus includes an auxiliary power amplifier apparatus and a main power amplifier apparatus, wherein the auxiliary power amplifier apparatus is configured to amplify signal power by using a Laterally Diffused Metal Oxide Semiconductor (LDMOS) device; the main power amplifier is configured to amplify signal power by using a High voltage heterojunction bipolar transistor (HVHBT) device. An HVHBT device is adopted as a main power amplifier in the present invention. By use of the present invention, a power amplification efficiency of a main power amplifier in a Doherty power amplifier may be enhanced compared with an existing Doherty power amplifier in which both a main power amplifier and an auxiliary power amplifier use LDMOS, thereby a power amplification efficiency of the whole Doherty power amplifier is substantially increased. | 08-29-2013 |
20130229233 | DOHERTY POWER AMPLIFIER APPARATUS AND POWER AMPLIFICATION METHOD - A Doherty power amplifier apparatus and power amplification method are disclosed in the present invention. The apparatus includes a main power amplifier apparatus and an auxiliary power amplifier apparatus, and the main power amplifier apparatus is configured to adopt a High Voltage Heterojunction Bipolar Transistor (HVHBT) device to amplify signal power, and the auxiliary power amplifier apparatus is configured to adopt a High Electron Mobility Transistor (HEMT) device to amplify signal power. A power amplification efficiency of a whole Doherty power amplifier will be enhanced substantially according to the present invention. | 09-05-2013 |
20150008984 | Circulator Power Amplifier Circuit And Design Method Therefor - The present invention provides a circulator power amplifier circuit and a connection method thereof. Wherein, the circulator power amplifier circuit includes a power amplifier, a circulator, a power load and a load. An output end of the power amplifier is connected to an input end of the circulator, the load is connected to an output end of the circulator and the power load is connected to the load end of the circulator, wherein, the circulator is an N-stage circulator or an M-port circulator, where both N and M are integers greater than one. The above circulator power amplifier circuit connected through using the circulator power amplifier circuit connection method increases the isolation for the circulator, and it is of great significance in terms of improving a standing wave of the power amplifier, ensuring stability of specification, preventing mismatch damages of the power amplifier and increasing reliability of the power amplifier. | 01-08-2015 |