Huaqiang
Huaqiang He, Beijing CN
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20140239800 | Red light-emitting nitride material, and light-emitting part and light-emitting device comprising the same - Disclosed are a red light-emitting nitride material, a light-emitting part and a light-emitting device comprising the same. The General Formula of the light-emitting material is: M | 08-28-2014 |
20140246693 | LIGHT EMITTING DIODE (LED) RED FLUORESCENT MATERIAL AND LIGHTING DEVICE HAVING THE SAME - Provided are a Light Emitting Diode (LED) red fluorescent material and a lighting device having the same. The florescent material consists of elements M, A, D, X, L and Z, wherein element M at least contains one or more than one element of Be, Mg, Ca, Sr, Ba and Zn; element A at least contains one or more than one element of B, Al, Ga, In, La, Gd, Lu, Sc and Y; element D at least contains one or more than one element of Si, Ge, C, Sn, Ti, Zr and Hf; element X at least contains one or more than one element of N, O and F; element L at least contains one or more than one element of S, Se and Te; and element Z at least contains one or more than one element of a rare earth element or a transition-metal element. | 09-04-2014 |
20150308657 | OXYNITRIDE ORANGE-RED FLUORESCENT SUBSTANCE AND LIGHT-EMITTING FILM OR SHEET AND LIGHT-EMITTING DEVICE COMPRISING THE SAME - An oxynitride orange-red fluorescent substance and a light-emitting film or sheet and a light-emitting device comprising the same are disclosed. The chemical formula of the oxynitride orange-red fluorescent substance is M | 10-29-2015 |
Huaqiang Hu, Guangzhou City CN
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20100146240 | Method, Application System and Storage Device for Managing Application Configuration Information - The present invention provides a method, an application system and a storage device for managing the configuration information of applications, and it is applied to the storage device where an application extension area is created for every logical resource and their application extension area to physical resource mappings are maintained. The method comprises: the application system accessing the application extension area of a logical resource on the storage device when executing an application; the storage device storing the configuration information generated by the application system for the application to the appropriate physical resource based on the said mappings. The present invention ensures that the configuration information of applications can survive the failure of the application system or storage device and be restored when the application system or the storage device recovers. | 06-10-2010 |
Huaqiang Hu, Hangzhou City CN
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20090138471 | METHOD AND APPARATUS FOR IDENTIFYING DATA CONTENT - A method for identifying data content comprises: establishing a character base which stores characters corresponding to various service applications and protocols; performing matching between contents of currently received data and the characters in the character base, and obtaining characters contained in the currently received data; identifying at least one of a service application and a protocol corresponding to the characters contained in the currently received data according to a mapping relation between characters and protocols as well as a mapping relation between characters and service applications. An apparatus for identifying data content is also disclosed. The technical scheme of the present invention can identify data content comprehensively and can be easily extended. | 05-28-2009 |
Huaqiang Wu, Burlingame, CA US
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20100155785 | HTO OFFSET SPACERS AND DIP OFF PROCESS TO DEFINE JUNCTION - Memory devices having an increased effective channel length and/or improved TPD characteristics, and methods of making the memory devices are provided. The memory devices contain two or more memory cells on a semiconductor substrate and bit line dielectrics between the memory cells. The memory cell contains a pair of first bit lines and a pair of second bit lines. The first and second bit lines can be formed by an implant process using first and second spacers that have different lateral lengths from each other. The spacers can be used to offset the implants, thereby controlling the lateral lengths of the bit lines. | 06-24-2010 |
20100155816 | HTO OFFSET AND BL TRENCH PROCESS FOR MEMORY DEVICE TO IMPROVE DEVICE PERFORMANCE - Memory devices having an increased effective channel length and/or improved TPD characteristics, and methods of making the memory devices are provided. The memory devices contain two or more memory cells on a semiconductor substrate and bit line dielectrics between the memory cells. The bit line dielectrics can extend into the semiconductor. The memory cell contains a charge trapping dielectric stack, a poly gate, a pair of pocket implant regions, and a pair of bit lines. The bit line can be formed by an implant process at a higher energy level and/or a higher concentration of dopants without suffering device short channel roll off issues because spacers at bit line sidewalls constrain the implant in narrower implant regions. | 06-24-2010 |
20100155817 | HTO OFFSET FOR LONG LEFFECTIVE, BETTER DEVICE PERFORMANCE - Memory devices having an increased effective channel length and/or improved TPD characteristics, and methods of making the memory devices are provided. The memory devices contain two or more memory cells on a semiconductor substrate and bit line dielectrics between the memory cells. The memory cell contains a charge trapping dielectric stack, a poly gate, a pair of pocket implant regions, and a pair of bit lines. The bit line can be formed by an implant process at a higher energy level and/or a higher concentration of dopants without suffering device short channel roll off issues because spacers at bit line sidewalls constrain the implant in narrower implant regions. | 06-24-2010 |
20110169069 | HTO OFFSET AND BL TRENCH PROCESS FOR MEMORY DEVICE TO IMPROVE DEVICE PERFORMANCE - Memory devices having an increased effective channel length and/or improved TPD characteristics, and methods of making the memory devices are provided. The memory devices contain two or more memory cells on a semiconductor substrate and bit line dielectrics between the memory cells. The bit line dielectrics can extend into the semiconductor. The memory cell contains a charge trapping dielectric stack, a poly gate, a pair of pocket implant regions, and a pair of bit lines. The bit line can be formed by an implant process at a higher energy level and/or a higher concentration of dopants without suffering device short channel roll off issues because spacers at bit line sidewalls constrain the implant in narrower implant regions. | 07-14-2011 |
20140167138 | HTO OFFSET FOR LONG LEFFECTIVE, BETTER DEVICE PERFORMANCE - Memory devices having an increased effective channel length and/or improved TPD characteristics, and methods of making the memory devices are provided. The memory devices contain two or more memory cells on a semiconductor substrate and bit line dielectrics between the memory cells. The memory cell contains a charge trapping dielectric stack, a poly gate, a pair of pocket implant regions, and a pair of bit lines. The bit line can be formed by an implant process at a higher energy level and/or a higher concentration of dopants without suffering device short channel roll off issues because spacers at bit line sidewalls constrain the implant in narrower implant regions. | 06-19-2014 |
Huaqiang Wu, Shenzhen CN
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20110283349 | IMPLEMENT METHOD AND DEVICE OF TERMINAL CALL FIREWALL - The present invention discloses an implement method and device of a terminal call firewall. The method comprises: adding a call number into a blacklist list, when it is determined that the call number is not in the blacklist list stored and an address list and it is determined that a call duration is less than a set call duration threshold. The device comprises: a storage module, which is connected with a judgment module, and configured to store a blacklist list and an address list; the judgment module, which is connected with a storage module and a timer, and configured to start up the timer to start timing when a call number is determined not in the blacklist list and the address list; the timer, which is connected with the judgment module and a processing module, and configured to make timing for a time length of a call duration threshold; the processing module, which is connected with the timer, and configured to add the call number into the blacklist list when the duration of the call is determined less than the call duration threshold. Through the method and the device, the present invention can ensure the terminal to identify unknown harassing call automatically during operation, can add the number of the call directly into the blacklist list, does not bother the user by ringing or prompting the user of the call, is simple and convenient to be used, and has remarkable practical effect. | 11-17-2011 |
Huaqiang Wu, Beijing CN
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20150325790 | METHOD FOR FORMING RESISTIVE RANDOM ACCESS MEMORY CELL - A method for forming a resistive random access memory is provided. The method comprises: steps of: S | 11-12-2015 |