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Huang, AZ
Jenn Hwa Huang, Chandler, AZ US
| Patent application number | Description | Published |
|---|---|---|
| 20090212374 | SPACE EFFICIENT INTEGRATRED CIRCUIT WITH PASSIVE DEVICES - A multimodal integrated circuit (IC) is provided, comprising, first ( | 08-27-2009 |
| 20100244178 | FIELD EFFECT TRANSISTOR GATE PROCESS AND STRUCTURE - A Schottky gate ( | 09-30-2010 |
| 20100295100 | INTEGRATED CIRCUIT HAVING A BULK ACOUSTIC WAVE DEVICE AND A TRANSISTOR - A bulk GaN layer is on a first surface of a substrate, wherein the bulk GaN layer has a GaN transistor region and a bulk acoustic wave (BAW) device region. A source/drain layer is over a first surface of the bulk GaN layer in the GaN transistor region. A gate electrode is formed over the source/drain layer. A first BAW electrode is formed over the first surface of the bulk GaN layer in the BAW device region. An opening is formed in a second surface of the substrate, opposite the first surface of the substrate, which extends through the substrate and exposes a second surface of the bulk GaN layer, opposite the first surface of the bulk GaN layer. A second BAW electrode is formed within the opening over the second surface of the bulk GaN layer. | 11-25-2010 |
Kirk K. Huang, Chandler, AZ US
| Patent application number | Description | Published |
|---|---|---|
| 20110266613 | SEMICONDUCTOR COMPONENT AND METHOD OF MANUFACTURE - A semiconductor component that includes gate electrodes and shield electrodes and a method of manufacturing the semiconductor component. A semiconductor material has a device region, a gate contact region, a termination region, and a drain contact region. One or more device trenches is formed in the device region and one or more termination trenches is formed in the edge termination region. Shield electrodes are formed in portions of the device trenches that are adjacent their floors. A gate dielectric material is formed on the sidewalls of the trenches in the device region and gate electrodes are formed over and electrically isolated from the shield electrodes. A gate electrode in at least one of the trenches is connected to at least one shield electrode in the trenches. | 11-03-2011 |
Weixiao Huang, Tempe, AZ US
| Patent application number | Description | Published |
|---|---|---|
| 20110101425 | SEMICONDUCTOR DEVICE WITH INCREASED SNAPBACK VOLTAGE - Methods and apparatus are provided for fabricating a semiconductor device structure. The semiconductor device structure comprises a buried region having a first conductivity type, a first region having a second conductivity type overlying the buried region, a source region having the first conductivity type overlying the first region, and a drain region having the first conductivity type overlying the first region. The semiconductor device structure further comprises a second region having the first conductivity type overlying the buried region, the second region abutting the buried region to form an electrical contact with the buried region, and a first resistance configured electrically in series with the second region and the buried region. The combined series resistance of the first resistance and the second region is greater than a resistance of the buried region. | 05-05-2011 |
| 20110241083 | SEMICONDUCTOR DEVICE AND METHOD - Transistors ( | 10-06-2011 |
| 20110241092 | ELECTRONIC DEVICE WITH CAPCITIVELY COUPLED FLOATING BURIED LAYER - Transistors ( | 10-06-2011 |
Wen Ling Huang, Scottsdale, AZ US
| Patent application number | Description | Published |
|---|---|---|
| 20110031588 | VARACTOR STRUCTURE AND METHOD - An improved varactor diode ( | 02-10-2011 |
Wen Ling M. Huang, Scottsdale, AZ US
| Patent application number | Description | Published |
|---|---|---|
| 20120021586 | METHODS FOR FORMING VARACTOR DIODES - Methods are disclosed for forming an improved varactor diode having first and second terminals. The methods include providing a substrate having a first surface in which are formed isolation regions separating first and second parts of the diode. A varactor junction is formed in the first part with a first side coupled to the first terminal and a second side coupled to the second terminal via a sub-isolation buried layer (SIBL) region extending under the bottom and partly up the sides of the isolation regions to a further doped region that is ohmically connected to the second terminal. The first part does not extend to the SIBL region. The varactor junction desirably comprises a hyper-abrupt doped region. The combination provides improved tuning ratio, operating frequency and breakdown voltage of the varactor diode while still providing adequate Q. | 01-26-2012 |
Zhong Huang, Tempe, AZ US
| Patent application number | Description | Published |
|---|---|---|
| 20110262966 | DNA REPLICON SYSTEM FOR HIGH-LEVEL RAPID PRODUCTION OF VACCINES AND MONOCLONAL ANTIBODY THERAPEUTICS IN PLANTS - Plant viral vectors have great potential in rapid production of proteins, but no simple. Here a geminivirus-based system for high-yield and rapid production of oligomeric protein complexes, including virus-like particle (VLP) vaccines and monoclonal antibodies (mAbs) is described. In particular, a single vector that contains two non-competing replicons for transient expression in | 10-27-2011 |