| Patent application number | Description | Published |
|---|
| 20090070083 | MODELING AN ARBITRARILY POLARIZED ILLUMINATION SOURCE IN AN OPTICAL LITHOGRAPHY SYSTEM - One embodiment of the present invention provides a system that accurately models polarization states of an illumination source in an optical lithography system for manufacturing integrated circuits. During operation, the system starts by receiving a two-dimensional (2D) grid map for an illumination source pupil in the optical lithography system. The system then constructs a source-polarization model for the illumination source by defining a polarization state at each grid point in the grid map. Next, the system enhances a lithography model for the optical lithography system by incorporating the source-polarization model into the lithography/OPC model. | 03-12-2009 |
| 20090070730 | METHOD AND APPARATUS FOR MODELING A VECTORIAL POLARIZATION EFFECT IN AN OPTICAL LITHOGRAPHY SYSTEM - One embodiment of the present invention provides a system that accurately models polarization effects in an optical lithography system for manufacturing integrated circuits. During operation, the system starts by receiving a polarization-description grid map for a lens pupil in the optical lithography system. The system then constructs a pupil-polarization model by defining a vectorial matrix at each grid point in the grid map, wherein the vectorial matrix specifies a pupil-induced polarization effect on an incoming optical field at the grid point. Next, the system enhances a lithography model for the optical lithography system by incorporating the pupil-polarization model into the lithography/OPC model. The system then uses the enhanced lithography model to perform convolutions with circuit patterns on a mask in order to simulate optical lithography pattern printing. | 03-12-2009 |
| 20090265148 | MODELING A SECTOR-POLARIZED-ILLUMINATION SOURCE IN AN OPTICAL LITHOGRAPHY SYSTEM - One embodiment of the present invention provides a system that constructs a source polarization model to simulate a piecewise-constant-linear polarization-configuration of an illumination source in an optical lithography system. During operation, the system starts by partitioning an illumination pupil plane of the illumination source into a set of sectors to match a physical implementation of the illumination source. Next, the system constructs the source polarization model for the illumination source by individually specifying a constant-linear polarization-state within each sector to match the polarization-configuration of the illumination source. | 10-22-2009 |
| 20090288047 | METHOD AND APPARATUS FOR USING A DATABASE TO QUICKLY IDENTIFY AND CORRECT A MANUFACTURING PROBLEM AREA IN A LAYOUT - One embodiment provides a system for using a database to quickly identify a manufacturing problem area in a layout. During operation, the system receives a first check-figure which identifies a first area in a first layout, wherein the first area is associated with a first feature. Next, the system determines a first sample using the first check-figure, wherein the first sample represents the first layout's geometry within a first ambit of the first check-figure, wherein the first sample's geometry is expected to affect the shape of the first feature. The system then performs a model-based simulation using the first sample to obtain a first simulation-result which indicates whether the first feature is expected to have manufacturing problems. Next, the system stores the first simulation-result in a database which is used to quickly determine whether a second feature is expected to have manufacturing problems. | 11-19-2009 |
| 20100115489 | METHOD AND SYSTEM FOR PERFORMING LITHOGRAPHY VERIFICATION FOR A DOUBLE-PATTERNING PROCESS - One embodiment of the present invention provides a system that performs lithography verification for a double-patterning process on a mask layout without performing a full contour simulation of the mask layout. During operation, the system starts by receiving a first mask which is used in a first lithography step of the double-patterning process, and a second mask which is used in a second lithography step of the double-patterning process. Note that the first mask and the second mask are obtained by partitioning the mask layout. Next, the system receives an evaluation point on the mask layout. The system then determines whether the evaluation point is exclusively located on a polygon of the first mask, exclusively located on a polygon of the second mask, or located elsewhere. The system next computes a printing indicator at the evaluation point for the mask layout based on whether the evaluation point is exclusively located on a polygon of the first mask or exclusively located on a polygon of the second mask. | 05-06-2010 |
| 20110029940 | METHOD AND APPARATUS FOR MODELING THIN-FILM TOPOGRAPHY EFFECT ON A PHOTOLITHOGRAPHY PROCESS - One embodiment of the present invention provides a system that determines image intensity at a location in a photoresist (PR) layer on a wafer. During operation, the system receives a set of masks which were used to generate one or more patterned layers of a multilayer structure on the wafer, wherein a patterned layer includes a set of reflectors on a top surface of the patterned layer, which correspond to patterns in a patterned-layer mask in the set of masks, wherein a reflector reflects light from a light source during a photolithography process. The system then generates a first virtual mask based on the first mask and the patterned-layer mask, wherein the first virtual mask uses a clear area to model a reflector in the set of reflectors. Next, the system determines the image intensity value at the location on the PR layer based at least on the first mask and the first virtual mask. | 02-03-2011 |
