Patent application number | Description | Published |
20100273286 | Method Of Fabricating An Integrated CMOS-MEMS Device - An embodiment of a method is provided that includes providing a substrate having a frontside and a backside. A CMOS device is formed on the substrate. A MEMS device is also formed on the substrate. Forming the MEMS device includes forming a MEMS mechanical structure on the frontside of the substrate. The MEMS mechanical structure is then released. A protective layer is formed on the frontside of the substrate. The protective layer is disposed on the released MEMS mechanical structure (e.g., protects the MEMS structure). The backside of the substrate is processed while the protective layer is disposed on the MEMS mechanical structure. | 10-28-2010 |
20110049652 | METHOD AND SYSTEM FOR MEMS DEVICES - A micro electro-mechanical (MEMS) device assembly is provided. The MEMS device assembly includes a first substrate that has a plurality of electronic devices, a plurality of first bonding regions, and a plurality of second bonding regions. The MEMS device assembly also includes a second substrate that is bonded to the first substrate at the plurality of first bonding regions. A third substrate having a recessed region and a plurality of standoff structures is disposed over the second substrate and bonded to the first substrate at the plurality of second bonding regions. The plurality of first bonding regions provide a conductive path between the first substrate and the second substrate and the plurality of the second bonding regions provide a conductive path between the first substrate and the third substrate. | 03-03-2011 |
20120146452 | MICROELECTROMECHANICAL SYSTEM DEVICE AND SEMI-MANUFACTURE AND MANUFACTURING METHOD THEREOF - A manufacturing method of the MEMS device disposes a conductive circuit to maintain various elements of the MEMS equi-potential thereby preventing electrostatic damages to various elements of the MEMS during the manufacturing process. | 06-14-2012 |
20120248615 | MEMS DEVICE AND MANUFACTURING PROCESS THEREOF - A manufacturing process of a MEMS device divides a substrate for fabricating a MEMS component into two electrically isolated regions, so that the MEMS component and the circuit disposed on its surface could connect electrically with another substrate below respectively through the corresponding conducing regions, whereby the configuration of the electrical conducting paths and the manufacturing process are simplified. A MEMS device manufactured by using the aforementioned process is also disclosed herein. | 10-04-2012 |
Patent application number | Description | Published |
20080197473 | CHIP HOLDER WITH WAFER LEVEL REDISTRIBUTION LAYER - A chip holder formed of silicon, glass, other ceramics or other suitable materials includes a plurality of recesses for retaining semiconductor chips. The bond pads of the semiconductor chip are formed on or over an area of the chip holder that surrounds the semiconductor chip thus expanding the bonding area. The bond pads are coupled, using semiconductor wafer processing techniques, to internal bond pads formed directly on the semiconductor chip. | 08-21-2008 |
20080299769 | SEMICONDUCTOR FABRICATION METHOD SUITABLE FOR MEMS - A method includes depositing a layer of a sacrificial material in a first region above a substrate. The first region of the substrate is separate from a second region of the substrate, where a corrosion resistant film is to be provided above the second region. The corrosion resistant film is deposited, so that a first portion of the corrosion resistant film is above the sacrificial material in the first region, and a second portion of the corrosion resistant film is above the second region. The first portion of the corrosion resistant film is removed by chemical mechanical polishing. The sacrificial material is removed from the first region using an etching process that selectively etches the sacrificial material, but not the corrosion resistant film. | 12-04-2008 |
20110042827 | BONDING STRUCTURES AND METHODS OF FORMING BONDING STRUCTURES - A semiconductor structure includes a first substrate and a second substrate bonded over the first substrate. The first substrate includes a passivation layer formed over the first substrate. The passivation layer includes at least one first opening exposing a first bonding pad formed over the first substrate. The second substrate includes at least one second opening aligned with and facing the first opening. | 02-24-2011 |