| Patent application number | Description | Published |
| 20080293188 | Reactive solder material - Reactive solder material. The reactive solder material may be soldered to semiconductor surfaces such as the backside of a die or wafer. The reactive solder material includes a base solder material alloyed with an active element material. The reactive solder material may also be applied to a portion of a thermal management device. The reactive solder material may be useful as a thermally conductive interface between a semiconductor surface and a thermal management device. | 11-27-2008 |
| 20080296754 | APPARATUS TO MINIMIZE THERMAL IMPEDANCE USING COPPER ON DIE BACKSIDE - A method and apparatus to minimize thermal impedance using copper on the die or chip backside. Some embodiments use deposited copper having a thickness chosen to complement a given chip thickness, in order to reduce or minimize wafer warpage. In some embodiments, the wafer, having a plurality of chips (e.g., silicon), is thinned (e.g., by chemical-mechanical polishing) before deposition of the copper layer, to reduce the thermal resistance of the chip. Some embodiments further deposit copper in a pattern of bumps, raised areas, or pads, e.g., in a checkerboard pattern, to thicken and add copper while reducing or minimizing wafer warpage and chip stress. | 12-04-2008 |
| Patent application number | Description | Published |
| 20090093072 | ELECTRONIC ASSEMBLIES WITH HOT SPOT COOLING AND METHODS RELATING THERETO - A composite of two or more thermal interface materials (“TIMs”) is placed between a die and a heat spreader to improve cooling of the die in an integrated circuit package. The two or more TIMs vary in heat-dissipation capability depending upon the locations of die hot spots. In an embodiment, a more thermally conductive material may be positioned over one or more die hot spots, and a less thermally conductive material may be positioned abutting and/or surrounding the more thermally conductive material. The two or more TIMs may comprise a solder and a polymer. The composite TIM may be preformed as one unit or as a plurality of units. Methods of fabrication, as well as application of the package to an electronic assembly and to an electronic system, are also described. | 04-09-2009 |
| 20100047971 | Electromigration-resistant and compliant wire interconnects, nano-sized solder compositions, systems made thereof, and methods of assembling soldered packages - A nano-sized metal particle composite includes a first metal that has a particle size of about 50 nanometer or smaller. A wire interconnect is in contact with a reflowed nanosolder and has the same metal or alloy composition as the reflowed nanosolder. A microelectronic package is also disclosed that uses the reflowed nanosolder composition. A method of assembling a microelectronic package includes preparing a wire interconnect template. A computing system includes a nanosolder composition coupled to a wire interconnect. | 02-25-2010 |
| 20100259890 | COMPOSITE SOLDER TIM FOR ELECTRONIC PACKAGE - A method includes providing a mixture of molten indium and molten aluminum, and agitating the mixture while reducing its temperature until the aluminum changes from liquid phase to solid phase, forming particles distributed within the molten indium. Agitation of the mixture sufficiently to maintain the aluminum substantially suspended in the molten aluminum continues while further reducing the temperature of the mixture until the indium changes from a liquid phase to a solid phase. A metallic composition is formed, including indium and particles of aluminum suspended within the indium, the aluminum particles being substantially free from oxidation. | 10-14-2010 |
| Patent application number | Description | Published |
| 20110196429 | SYSTEM AND METHOD FOR WIRE-GUIDED PEDICLE SCREW STABILIZATION OF SPINAL VERTEBRAE - An improved system and method for positioning screws and rods to immobilize bones is provided. Specifically, the system and method is optimal for performing transforaminal lumbar interbody fusion (TLIF) and other interbody fusions in the spine. The system involves pedicle screws detachably connected to wires that guide rods down to the screws. The wires are strong, narrow, flexible, adjustable in tension, and easily disconnected from the screws after rod placement via a process such as cutting, radiating, burning, dissolving, etc. The use of wires to place the rods avoids the conventional bulky tower apparatuses of the prior art while at the same time enhancing the accuracy of placement. One of the preferred methods involves relying upon the natural lordotic curvature of the spine and the narrow diameter of the wires to insert many elements through a single minimally invasive incision. | 08-11-2011 |
| 20110270324 | SYSTEM AND METHOD FOR WIRE-GUIDED PEDICLE SCREW STABILIZATION OF SPINAL VERTEBRAE - An improved system and method for positioning screws and rods to immobilize bones is provided. Specifically, the system and method is optimal for performing transforaminal lumbar interbody fusion (TLIF) and other interbody fusions in the spine. The system involves pedicle screws detachably connected to wires that guide rods down to the screws. The wires are strong, narrow, flexible, adjustable in tension, and easily disconnected from the screws after rod placement via a process such as cutting, radiating, burning, dissolving, etc.. The use of wires to place the rods avoids the conventional bulky tower apparatuses of the prior art while at the same time enhancing the accuracy of placement. One of the preferred methods involves relying upon the natural lordotic curvature of the spine and the narrow diameter of the wires to insert many elements through a single minimally invasive incision. | 11-03-2011 |
| 20110282390 | SYSTEMS AND METHODS FOR PEDICLE SCREW STABILIZATION OF SPINAL VERTEBRAE - The present application is directed to various spinal stabilization systems. The systems can include one or more guiding elements attached to screw members to assist in guiding rod implants and tools to desired locations within a patient. The guiding elements can include a plurality of wires, blades, or tabs. The guiding elements can be capable of criss-crossing or intersecting at or near an incision, such that only a single incision may be needed to perform a surgery. The guiding elements can also include telescoping features that allow the height of the guiding elements to be adjusted in use, thereby allowing multiple telescoping guiding elements to be used with the same incision. | 11-17-2011 |
| 20110301647 | SYSTEMS AND METHODS FOR PEDICLE SCREW STABILIZATION OF SPINAL VERTEBRAE - The present application is directed to various spinal stabilization systems. The systems can include one or more guiding elements attached to screw members to assist in guiding rod implants and tools to desired locations within a patient. The guiding elements can include a plurality of wires, blades, or tabs. The guiding elements can be capable of criss-crossing or intersecting at or near an incision, such that only a single incision may be needed to perform a surgery. The guiding elements can also include telescoping features that allow the height of the guiding elements to be adjusted in use, thereby allowing multiple telescoping guiding elements to be used with the same incision. | 12-08-2011 |
| 20120016422 | SYSTEMS AND METHODS FOR PEDICLE SCREW STABILIZATION OF SPINAL VERTEBRAE - The present application is directed to various spinal stabilization systems. The systems can include one or more guiding elements attached to screw members to assist in guiding rod implants and tools to desired locations within a patient. The guiding elements can include a plurality of wires, blades, or tabs. The guiding elements can be capable of criss-crossing or intersecting at or near an incision, such that only a single incision may be needed to perform a surgery. The guiding elements can also include telescoping features that allow the height of the guiding elements to be adjusted in use, thereby allowing multiple telescoping guiding elements to be used with the same incision. | 01-19-2012 |
| 20120016423 | SYSTEM AND METHOD FOR WIRE-GUIDED PEDICLE SCREW STABILIZATION OF SPINAL VERTEBRAE - An improved system and method for positioning screws and rods to immobilize bones is provided. Specifically, the system and method is optimal for performing transforaminal lumbar interbody fusion (TLIF) and other interbody fusions in the spine. The system involves pedicle screws detachably connected to wires that guide rods down to the screws. The wires are strong, narrow, flexible, adjustable in tension, and easily disconnected from the screws after rod placement via a process such as cutting, radiating, burning, dissolving, etc. The use of wires to place the rods avoids the conventional bulky tower apparatuses of the prior art while at the same time enhancing the accuracy of placement. One of the preferred methods involves relying upon the natural lordotic curvature of the spine and the narrow diameter of the wires to insert many elements through a single minimally invasive incision. | 01-19-2012 |
| Patent application number | Description | Published |
| 20090033098 | Controlling power extraction for wind power generation - A power generation system is disclosed. The power generation system comprises a kite connected to a line. The line is alternatively let out during a traction phase and recovered during a recovery phase. A power extractor connected to the line to extract power during the traction phase. And, a power extraction controller configured to target a preferred traction phase line velocity and a preferred recovery phase line velocity. | 02-05-2009 |
| 20100269231 | COMPRESSED SCAN SYSTEMS - A method for building a fast scan system is provided in which a scanner moves the scan sensors faster than scanners of the prior art, even though the total distance that the scan sensors move longer. The scan system includes (a) a scan sensor that measures the scan target by moving around it, and (b) a data processing system that calculates a parameter of the scan target from the collected data. The scan sensor, which has a limited sensing bandwidth, is moved along multiple paths along the target at a scan speed that is faster than the scan speed determined by the scan sensor bandwidth, so as to obtain a clear signal directly from the scan sensor output. The target is then recovered from the scan output using a compressed sampling data recovery data processing method. | 10-21-2010 |
| 20110282929 | Computerized Request and Reward System - This application relates to low cost, scalable computerized systems (and related methods) for users to set up requests and to reward users who helped to satisfy the requests. Users can send request to other users. Users can forward request to other users. | 11-17-2011 |
| Patent application number | Description | Published |
| 20090215281 | HDP-CVD SION FILMS FOR GAP-FILL - The present invention pertains to methods of depositing low stress/high index multi-layer films on a substrate using an HDP-CVD process. The multi-layer films include two lining layers and a bulk gap-fill layer and the HDP-CVD process employs a reduced substrate bias power during deposition of at least the second lining layer. Deposition of the three layers occurs at reduced deposition temperatures which further reduces the stress of the multi-layer film. The lower stress results in less defectivity which improves the films ability to maintain optical confinement of radiation. | 08-27-2009 |
| 20100095979 | REMOTE PLASMA CLEAN PROCESS WITH CYCLED HIGH AND LOW PRESSURE CLEAN STEPS - A remote plasma process for removing unwanted deposition build-up from one or more interior surfaces of a substrate processing chamber after processing a substrate disposed in the substrate processing chamber. In one embodiment, the substrate is transferred out of the substrate processing chamber and a flow of a fluorine-containing etchant gas is introduced into a remote plasma source where reactive species are formed. A continuous flow of the reactive species from the remote plasmas source to the substrate processing chamber is generated while a cycle of high and low pressure clean steps is repeated. During the high pressure clean step, reactive species are flown into the substrate processing chamber while pressure within the substrate processing chamber is maintained between 4-15 Torr. During the low pressure clean step, reactive species are flown into the substrate processing chamber while reducing the pressure of the substrate processing chamber by at least | 04-22-2010 |
| 20110129990 | METHOD FOR DOPING NON-PLANAR TRANSISTORS - Methods for doping a non-planar structure by forming a conformal doped silicon glass layer on the non-planar structure are disclosed. A substrate having the non-planar structure formed thereon is positioned in chemical vapor deposition process chamber to deposit a conformal SACVD layer of doped glass (e.g. BSG or PSG). The substrate is then exposed to RTP or laser anneal step to diffuse the dopant into the non-planar structure and the doped glass layer is then removed by etching. | 06-02-2011 |
| 20110223760 | CONFORMALITY OF OXIDE LAYERS ALONG SIDEWALLS OF DEEP VIAS - A method for improving conformality of oxide layers along sidewalls of vias in semiconductor substrates includes forming a nitride layer over an upper surface of a semiconductor substrate and forming a via extending through the nitride layer and into the semiconductor substrate. The via may have a depth of at least about 50 μm from a top surface of the nitride layer and an opening of less than about 10 μm at the top surface of the nitride layer. The method also includes forming an oxide layer over the nitride layer and along sidewalls and bottom of the via. The oxide layer may be formed using a thermal chemical vapor deposition (CVD) process at a temperature of less than about 450° C., where a thickness of the oxide layer at the bottom of the via is at least about 50% of a thickness of the oxide layer at the top surface of the nitride layer. | 09-15-2011 |
| 20120015113 | METHODS FOR FORMING LOW STRESS DIELECTRIC FILMS - A method for forming a multi-layer silicon oxide film on a substrate includes performing a deposition cycle that comprises depositing a silicon oxide layer using a thermal chemical vapor deposition (CVD) process and depositing a silicon oxide layer using a plasma enhanced chemical vapor deposition (PECVD) process. The deposition cycle is repeated a specified number of times to form the multi-layer silicon oxide film comprising a plurality of silicon oxide layers formed using the thermal CVD process and a plurality of silicon oxide layers formed using the PECVD process. Each silicon oxide layer formed using the thermal CVD process is adjacent to at least one silicon oxide layer formed using the PECVD process. | 01-19-2012 |