| Patent application number | Description | Published |
|---|
| 20080199391 | Method for circuits inspection and the method of the same - A method for circuit inspection comprises steps of providing a substrate having a conductive line; and forming a metal layer on at least the conductive layer to increase a contrast between the conductive layer and adjacent area for the circuit inspection. The method further comprising removing the metal layer. The metal layer is removed by a mixture of nitric acid, hydrogen peroxide and fluoride boric acid. The metal includes Silver, Nickel or Tin. The deposit metal can be removed by inter diffusion and form intermetallic compounds (for example Cu | 08-21-2008 |
| 20090184425 | Conductive line structure and the method of forming the same - The conductive line structure of a semiconductor device including a base; at least one patterned conductive layer formed over the base; a conductive line formed over the at least one patterned conductive layer; a protection layer that encompasses the top surface and sidewall of the conductive line to prevent undercut generated by etching. The structure further comprises an underlying layer under the conductive line. The underlying layer includes Ni, Cu or Pt. The conductive line includes gold or copper. The at least one patterned conductive layer includes at least Ti/Cu. The protection layer includes electro-less plating Sn, Au, Ag or Ni. | 07-23-2009 |
| 20100007017 | INTER-CONNECTING STRUCTURE FOR SEMICONDUCTOR PACKAGE AND METHOD FOR THE SAME - The present invention discloses an inter-connecting structure for a semiconductor package and a method for the same. The inter-connecting structure for the semiconductor package comprises a substrate formed to support a die thereon; core paste formed on the substrate and adjacent to the die; and a stiffener formed in an upper portion of the core paste, wherein the hardness of the stiffener is larger than the hardness of the core paste. | 01-14-2010 |
| 20100109156 | BACK SIDE PROTECTIVE STRUCTURE FOR A SEMICONDUCTOR PACKAGE - The present invention provides a semiconductor device package, comprising a die having a back surface and an active surface formed thereon; a conductive layer formed upon the back surface of the die; and a protection substrate formed on the conductive layer. An adhesive layer is formed between the conductive layer and the protective layer, if necessary. The present invention further provides a method for forming a semiconductor device package, comprising providing a plurality of die having a back surface and an active surface on a wafer; forming a conductive layer upon the back surface of the die; forming protection substrates on the conductive layer; forming a plurality of bumps on the active surface of each die; and dicing the plurality of die into individual die for singulation by exerting external force on the substrate. An adhesive layer is formed between the conductive layer and the protective layer, if necessary. | 05-06-2010 |
| 20110031594 | CONDUCTOR PACKAGE STRUCTURE AND METHOD OF THE SAME - The present invention provides a conductor package structure that comprises a conductive base. An adhesive layer is formed on the conductive base. An electronic element is formed on the adhesive layer. Conductors form a signal connection between the surface of a filling material and the bottom of the filling material, wherein the filling material is filled in the space between the electronic element and the conductors. | 02-10-2011 |
| 20110031607 | CONDUCTOR PACKAGE STRUCTURE AND METHOD OF THE SAME - The present invention provides a conductor package structure comprising a conductive base. An adhesive layer is formed on the conductive base. An electronic element is formed on the adhesive layer. Conductors are forming signal connection between the surface of a filling material and the bottom of the filling material, wherein the filling material is filled in the space between the electronic element and the conductors. | 02-10-2011 |
| 20110108977 | PACKAGE STRUCTURE AND MANUFACTURING METHOD THEREOF - The present invention discloses a semiconductor device package structure with redistribution layer (RDL) and through silicon via (TSV) techniques. The package structure comprises an electronic element which includes a dielectric layer on a backside surface of the electronic element, a plurality of first conductive through vias across through the electronic element and the dielectric layer, and a plurality of conductive pads accompanying the first conductive through vias on an active surface of the electronic element; a filler material disposed adjacent to the electronic element; a first redistribution layer disposed over the dielectric layer and the filler material, and connected to the first conductive through vias; a first protective layer disposed over the active surface of the electronic element, the conductive pads, and the filler material; and a second protective layer disposed over the redistribution layer, the dielectric layer, and the filler material. | 05-12-2011 |
