Patent application number | Description | Published |
20100153883 | Translating Events in a User Interface - Systems and methods for translating events in a high definition video playback system are disclosed. A disc viewer is configured to read at least one user interactive program on a high definition optical disc defining an original menu of a user interface. The user interface defines a plurality of event handlers for user interaction with the user interface. An express menu renderer is configured to generate a menu populated with a plurality of selectable elements that are responsive to interaction with a mouse and/or pointing device. The selectable elements correspond to user interactive features of the user interface and have a corresponding visual identifier. | 06-17-2010 |
20130091466 | Translating Events in a User Interface - Systems and methods for translating events in a high definition video playback system are disclosed. A disc viewer is configured to read at least one user interactive program on a high definition optical disc defining an original menu of a user interface. The user interface defines a plurality of event handlers for user interaction with the user interface. An express menu renderer is configured to generate a menu populated with a plurality of selectable elements that are responsive to interaction with a mouse and/or pointing device. The selectable elements correspond to user interactive features of the user interface and have a corresponding visual identifier. | 04-11-2013 |
20130314315 | METHOD AND SYSTEM FOR A MORE REALISTIC INTERACTION EXPERIENCE USING A STEREOSCOPIC CURSOR - A stereoscopic cursor method comprising: calculating a cursor scene depth of a stereoscopic cursor for a stereoscopic user interface comprising plural stereoscopic buttons, wherein the stereoscopic cursor is positioned between a viewer and the plural stereoscopic buttons; constraining movement of the stereoscopic cursor between the viewer and the plural stereoscopic buttons at the cursor scene depth for input device movements by the viewer that navigate across the front of the plural stereoscopic buttons; receiving an input signal corresponding to viewer selection of one of the plural stereoscopic buttons; and responsive to receiving the input signal, causing movement of the stereoscopic cursor from one end of the cursor scene depth to the one of the plural stereoscopic buttons in a direction coincident with the cursor scene depth. | 11-28-2013 |
20130342453 | METHOD FOR DISPLAYING A STEREOSCOPIC CURSOR AMONG STEREOSCOPIC OBJECTS - A stereoscopic cursor method comprising: generating a virtual plane based on a variable cursor scene depth of a stereoscopic cursor for a stereoscopic user interface, the stereoscopic user interface comprising plural stereoscopic buttons, wherein the virtual plane is positioned between a viewer and the plural stereoscopic buttons; and causing the stereoscopic cursor to move along the virtual plane responsive to viewer input, the movement occurring smoothly and gradually adjacent to the plural stereoscopic buttons and varying in depth as the stereoscopic cursor progresses along the virtual plane from one of the plural stereoscopic buttons to another, the generating and causing performed by a processor in a computing device. | 12-26-2013 |
Patent application number | Description | Published |
20150349200 | MICRO-LIGHT-EMITTING DIODE - A micro-light-emitting diode (micro-LED) includes a first type semiconductor layer, a second type semiconductor, a first current controlling layer, a first electrode, and a second electrode. The second type semiconductor layer and the first current controlling layer are joined with the first type semiconductor layer. The first current controlling layer has at least one opening therein. The first electrode is electrically coupled with the first type semiconductor layer through the opening. The second electrode is electrically coupled with the second type semiconductor layer. At least one of the first electrode and the second electrode has a light-permeable part. A vertical projection of the first current controlling layer on said one of the first electrode and the second electrode overlaps with the light-permeable part. The light-permeable part is transparent or semi-transparent. | 12-03-2015 |
20150349205 | MICRO-LIGHT-EMITTING DIODE - A micro-light-emitting diode (micro-LED) includes a first type semiconductor layer, a second type semiconductor layer, a first edge isolation structure, a first electrode, and a second electrode. The second type semiconductor layer and the first edge isolation structure are joined with the first type semiconductor layer. The first electrode is electrically coupled with the first type semiconductor layer. At least a part of a vertical projection of an edge of the first type semiconductor layer on the first electrode overlaps with the first electrode. The first edge isolation structure is at least partially located on the part of the first type semiconductor layer. The second electrode is electrically coupled with the second type semiconductor layer. | 12-03-2015 |
20160064594 | LIGHT-EMITTING DIODE - A light-emitting diode (LED) includes a first type semiconductor layer, a second type semiconductor layer, a first current controlling structure, and a first electrode. The second type semiconductor layer is joined with the first type semiconductor layer. The second type semiconductor layer has a first region and a second region, in which the first region has a first threading dislocation density, the second region has a second threading dislocation density, and the first threading dislocation density is greater than the second threading dislocation density. The first current controlling structure is joined with the first type semiconductor layer and has at least one first current-injecting zone therein, in which the vertical projection of the second region on the first current controlling structure at least partially overlaps with the first current-injecting zone. The first electrode is electrically coupled with the first type semiconductor layer. | 03-03-2016 |
20160072012 | LIGHT-EMITTING DIODE - A light-emitting diode (LED) includes a first type semiconductor layer, a second type semiconductor layer, a current controlling structure, a first electrode, and a second electrode. The second type semiconductor layer is joined with the first type semiconductor layer. The current controlling structure is joined with the first type semiconductor layer, and the current controlling structure has at least one current-injecting zone therein. The first electrode is electrically coupled with the first type semiconductor layer through the current-injecting zone of the current controlling structure. The second electrode is electrically coupled with the second type semiconductor layer. | 03-10-2016 |
Patent application number | Description | Published |
20110210660 | LED BULB ASSEMBLIES - The present invention is to provide a LED bulb assembly, which includes a LED body and two connecting legs, wherein the LED body made of only one material with a nipple-type appearance. The LED body includes a head and body, in which the head is a semi-ball connecting with side arcs and the body is a cylinder. In use of these, the light will be the true color of the lighting source. | 09-01-2011 |
20150228766 | Formation of High Quality Fin in 3D Structure by Way of Two-Step Implantation - The present disclosure discloses a method of fabricating a semiconductor device. A fin structure is formed over a substrate. The fin structure contains a semiconductor material. A first implantation process is performed to a region of the fin structure to form a fin seed within the region of the fin structure. The fin seed has a crystal structure. The first implantation process is performed at a process temperature above about 100 degrees Celsius. A second implantation process is performed to the region of the fin structure to cause the region of the fin structure outside the fin seed to become amorphous. The second implantation process is performed at a process temperature below about 0 degrees Celsius. Thereafter, an annealing process is performed to recrystallize the region of the fin structure via the fin seed. | 08-13-2015 |
20150340472 | FORMATION OF HIGH QUALITY FIN IN 3D STRUCTURE BY WAY OF TWO-STEP IMPLANTATION - The present disclosure discloses a method of fabricating a semiconductor device. A fin structure is formed over a substrate. The fin structure contains a semiconductor material. A first implantation process is performed to a region of the fin structure to form a fin seed within the region of the fin structure. The fin seed has a crystal structure. The first implantation process is performed at a process temperature above about 100 degrees Celsius. A second implantation process is performed to the region of the fin structure to cause the region of the fin structure outside the fin seed to become amorphous. The second implantation process is performed at a process temperature below about 0 degrees Celsius. Thereafter, an annealing process is performed to recrystallize the region of the fin structure via the fin seed. | 11-26-2015 |
20160027646 | High Temperature Intermittent Ion Implantation - A method includes providing a semiconductor substrate, and performing an ion implantation process to a surface of the substrate. The ion implantation process includes intermittently applying an ion beam to the surface, and while applying the ion beam, applying a heating process with a heating temperature above a threshold level. | 01-28-2016 |