Patent application number | Description | Published |
20120299682 | SYMMETRIC DIFFERENTIAL INDUCTOR STRUCTURE - A symmetric differential inductor structure includes first, second, third and fourth spiral conductive wirings disposed in four quadrants of a substrate, respectively. Further, a fifth conductive wiring connects the first and fourth spiral conductive wirings, and a sixth conductive wiring connects the second and third spiral conductive wirings. The first and second spiral conductive wirings are symmetric but not intersected with one another, and the third and fourth spiral conductive wirings are symmetric but not intersected with one another. Therefore, the invention attains full geometric symmetry to avoid using conductive wirings that occupy a large area of the substrate as in the prior art and to thereby increase the product profit and yield. | 11-29-2012 |
20120299683 | ASYMMETRIC DIFFERENTIAL INDUCTOR - An asymmetric differential inductor includes first and second conductive wirings spirally disposed on a substrate having a first input terminal, a second input terminal, a ground terminal, and a central conductive wiring. The central conductive wiring has a central contact connecting the ground terminal and a central end away from the ground terminal. The first conductive wiring extends across the central conductive wiring and has a first contact connecting the first input terminal and a first end connecting the central end. The second conductive wiring extends across the central conductive wiring and interlaces with the first conductive wiring and has a second contact connecting the second input terminal and a second end connecting the central end. Corresponding portions of wiring sections of the first and second conductive wirings at opposite sides of the central conductive wiring are asymmetrical to one another to thereby save substrate space and facilitate circuit layout. | 11-29-2012 |
20130032931 | LAYER STRUCTURE WITH EMI SHIELDING EFFECT - A layer structure with an electromagnetic interference (EMI) shielding effect is applicable for reducing an EMI effect caused by signal transmission between through silicon vias, so as to effectively provide the EMI shielding effect between electrical interconnections of a three-dimensional (3D) integrated circuit. By forming EMI-shielding through silicon vias at predetermined positions between the through silicon vias used for signal transmission, a good EMI shielding effect can be attended, and signal distortion possibly caused by the EMI effect can be reduced between different chips or substrates. | 02-07-2013 |
20130034971 | INTERCONNECTING MECHANISM FOR 3D INTEGRATED CIRCUIT - An interconnecting mechanism is provide, which includes paired first sub-interconnecting mechanisms and paired second sub-interconnecting mechanisms. The first pair of sub-interconnecting mechanisms includes first and second axially symmetrical spiral conductive elements. The second pair of sub-interconnecting mechanisms includes third and fourth axially symmetrical spiral conductive elements. Configuring the pairs of sub-interconnecting mechanisms in a differential transmission structure having a spiral shape is used to avert sounds and noise signals between different chips or substrates caused by a miniaturizing fabrication process or an increased wiring density. | 02-07-2013 |
20130328584 | TESTING APPARATUS AND METHOD - Disclosed is a testing apparatus, including: a base having opposite upper and lower surfaces, and a plurality of electrical circuits formed in the base, each of the electrical circuits extending from the upper surface to the lower surface and bending backwards to the upper surface such that two terminal ends of the electrical circuit are located on the upper surface. While in a testing, an element is disposed on the upper surface of the base such that testing probes are placed on the electrical contact spots of both the element and the upper surface of the base, thus without resorting to double sided testing that testing probes are placed on the upper and lower surfaces of the element as mentioned in the prior art. Hence, the testing apparatus and testing method can simplify the testing process and prevent the element from damage caused by mechanical stresses of the testing probes. | 12-12-2013 |
20140021591 | EMI SHIELDING SEMICONDUCTOR ELEMENT AND SEMICONDUCTOR STACK STRUCTURE - A semiconductor element is provided, including: a substrate having a plurality of first conductive through holes and second conductive through holes formed therein; a redistribution layer formed on the substrate and having a plurality of conductive pads electrically connected to the first conductive through holes; and a metal layer formed on the redistribution layer and electrically connected to the second conductive through holes. The metal layer further has a plurality of openings for the conductive pads of the redistribution layer to be exposed from the openings without electrically connecting the first metal layer. As such, the metal layer and the second conductive through holes form a shielding structure that can prevent passage of electromagnetic waves into or out of the redistribution layer or side surfaces of the semiconductor element, thereby effectively shield electromagnetic interference. | 01-23-2014 |
20140131072 | CONNECTION STRUCTURE FOR A SUBSTRATE AND A METHOD OF FABRICATING THE CONNECTION STRUCTURE - A connection structure for a substrate is provided. The substrate has a plurality of connection pads and an insulation protection layer with the connection pads being exposed therefrom. The connection structure includes a metallic layer formed on an exposed surface of each of the connection pads and extending to the insulation protection layer, and a plurality of conductive bumps disposed on the metallic layer and spaced apart from one another at a distance less than or equal to 80 μm, each of conductive bumps having a width less than a width of each of the connection pads. Since the metallic layer covers the exposed surfaces of the connection pads completely, a colloid material will not flow to a surface of the connection pads during a subsequent underfilling process of a flip-chip process. Therefore, the colloid material will not be peeled off from the connection pads. | 05-15-2014 |
20140231972 | MULTI-CHIP PACKAGE AND METHOD FOR MANUFACTURING THE SAME - A multi-chip package structure is provided, including a substrate having a grounding structure; two semiconductor elements disposed on and electrically connected to the substrate; an encapsulant formed on the substrate and encapsulating semiconductor elements, wherein the encapsulant has a plurality of round holes formed between the semiconductor elements; and an electromagnetic shielding structure formed in each of the round holes and connected to the grounding structure to achieve electromagnetic shielding effects. A method for forming the multi-chip package is also provided. | 08-21-2014 |
20150028913 | TESTING APPARATUS AND TESTING METHOD - The present invention proposes a testing method for testing a semiconductor element, including: providing a semiconductor element having a first surface on which a first testing area is formed and a second surface on which a second testing surface is formed; placing the semiconductor element on a plane surface, allowing any one of the first surface and the second surface to be in no parallel to the plane surface; and electrically connecting a testing apparatus to the first testing area and the second testing area of the semiconductor element. The semiconductor element is placed in a non-horizontal manner on the testing apparatus, which makes contact with the two opposing surfaces of the semiconductor element in a horizontal way without directly exerting a downward force against the surface of the semiconductor element, thereby preventing the semiconductor element from damages. | 01-29-2015 |