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Hsin-Hui Hsu, Hsin-Chu TW

Hsin-Hui Hsu, Hsin-Chu TW

Patent application numberDescriptionPublished
20100289065MEMS INTEGRATED CHIP WITH CROSS-AREA INTERCONNECTION - The present invention discloses a MEMS (Micro-Electro-Mechanical System) integrated chip with cross-area interconnection, comprising: a substrate; a MEMS device area on the substrate; a microelectronic device area on the substrate; a guard ring separating the MEMS device area and the microelectronic device area; and a conductive layer on the surface of the substrate below the guard ring, or a well in the substrate below the guard ring, as a cross-area interconnection electrically connecting the MEMS device area and the microelectronic device area.11-18-2010
20100297461COLOR FILTER BY COPPER AND SILVER FILM AND METHOD FOR MAKING SAME - The present invention discloses a color filter by copper and silver film, comprising: a lower copper layer; a lower silver layer formed on the lower copper layer; a medium formed on the lower silver layer; an upper copper layer formed on the medium; and an upper silver layer formed on the upper copper layer.11-25-2010
20110049565OPTOELECTRONIC DEVICE AND PROCESS FOR MAKING SAME - The present invention discloses an optoelectronic device, comprising: a substrate made of a first material; a region in the substrate, the region being made of a second material different from the first material; and a photo diode formed in the region by ion implantation. The second material for example is silicon germanium (Si1-xGex) or silicon carbide (Si1-yCy), wherein 003-03-2011
20110126623OPTICAL DETECTION METHOD AND OPTICAL MEMS DETECTOR, AND METHOD FOR MAKING MEMS DETECTOR - The present invention discloses an optical MEMS detector, comprising: a substrate; at least one photo diode in a region within the substrate; an isolation wall above the substrate and surrounding the photo diode region; and at least one movable part having an opening for light to pass through and reach the photo diode, wherein when the at least one movable part is moved, an amount of light reaching the photo diode is changed.06-02-2011
20110127620MEMS INTEGRATED CHIP AND METHOD FOR MAKING SAME - The present invention discloses a MEMS (Micro-Electro-Mechanical System) chip and a method for making the MEMS chip. The MEMS chip comprises: a first substrate having a first surface and a second surface opposing each other; a microelectronic device area on the first surface; a first MEMS device area on the second surface; and a conductive interconnection structure electrically connecting the microelectronic device area and the first MEMS device area.06-02-2011
20110236805MEMS lithography mask with improved tungsten deposition topography and method for the same - The present invention discloses a MEMS lithography mask with improved tungsten deposition topography and a method for making the same. The MEMS lithography mask includes: a pattern including at least two sections forming a conjunction with each other, each of the at least two sections having a width not less than a minimum width, the conjunction having a center and a plurality of corners, wherein at least one of the corners is inwardly recessed to reduce a width of the conjunction, the sections being for defining trenches on a substrate to be filled with tungsten as apart of a MEMS device, whereby the lowest height of the tungsten surface is not lower than 80% of the trench height.09-29-2011
20110298136MEMS INTEGRATED CHIP WITH CROSS-AREA INTERCONNECTION - The present invention discloses a MEMS (Micro-Electro-Mechanical System) integrated chip with cross-area interconnection, comprising: a substrate; a MEMS device area on the substrate; a microelectronic device area on the substrate; a guard ring separating the MEMS device area and the microelectronic device area; and a conductive layer on the surface of the substrate below the guard ring, or a well in the substrate below the guard ring, as a cross-area interconnection electrically connecting the MEMS device area and the microelectronic device area.12-08-2011
20110304009MEMS INTEGRATED CHIP WITH CROSS-AREA INTERCONNECTION - The present invention discloses a MEMS (Micro-Electro-Mechanical System) integrated chip with cross-area interconnection, comprising: a substrate; a MEMS device area on the substrate; a microelectronic device area on the substrate; a guard ring separating the MEMS device area and the microelectronic device area; and a conductive layer on the surface of the substrate below the guard ring, or a well in the substrate below the guard ring, as a cross-area interconnection electrically connecting the MEMS device area and the microelectronic device area.12-15-2011