| Patent application number | Description | Published |
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| 20080197469 | Multi-chips package with reduced structure and method for forming the same - The present invention provides a structure of multi-chips package and Method of the same comprising a substrate with a pre-formed die receiving cavity formed within an upper surface of the substrate. A die is disposed within the die receiving cavity by adhesion and an elastic dielectric layer filled into a gap between the die and the substrate to absorb thermal mechanical stress; therefore the thickness of the package is reduced and the CTE mismatch of the structure is reduced. The present invention also provides a structure for SIP with higher reliability and lower manufacturing cost. the process is simpler and it is easy to form the multi-chips package than the traditional one. Therefore, the present invention discloses a fan-out WLP with reduced thickness and good CTE matching performance. | 08-21-2008 |
| 20080211075 | IMAGE SENSOR CHIP SCALE PACKAGE HAVING INTER-ADHESION WITH GAP AND METHOD OF THE SAME - A structure of semiconductor device package having inter-adhesion with gap comprising: a chip with bonding pads and a sensor area embedded into a substrate with die window and inter-connecting through holes, wherein a RDL is formed over the substrate for coupling between the bonding pads and the inter-connecting through holes; a multiple rings (dam bar) formed over the substrate, the RDL, and the bonding pads area except the sensor area; an adhesive glues fill into the space of the multiple ring except the sensor area; and a transparency material bonded on the top of the multiple ring and the adhesive glues, wherein the adhesive glues adhesion between the transparency material and the multiple rings. | 09-04-2008 |
| 20080217761 | Structure of semiconductor device package and method of the same - The present invention provides a semiconductor device package comprising a substrate with at lease a pre-formed die receiving cavity formed and terminal contact metal pads formed within an upper surface of the substrate. At lease a first die is disposed within the die receiving cavity. A first dielectric layer is formed on the first die and the substrate and refilled into a gap between the first die and the substrate to absorb thermal mechanical stress there between. A first re-distribution layer (RDL) is formed on the first dielectric layer and coupled to the first die. A second dielectric layer is formed on the first RDL, and then a second die is disposed on the second dielectric layer and surrounded by core pastes having through holes thereon. A second re-distribution layer (RDL) is formed on the core pastes to fill the through holes, and then a third dielectric layer formed on the second RDL. | 09-11-2008 |
| 20080229574 | Self chip redistribution apparatus and method for the same - The present invention provides an apparatus and a method for self chip redistribution. The apparatus of the present invention comprises a glass base on which a trench and a cavity formed by a layer of photo resistance. Chips are picked from a sawed wafer and placed on the glass base and moved by fluid flow to the front of index bar. The glass base and the index bar vibrate with low frequency to fill chips into chip cavities. The present invention further provides a method for self chip redistribution, comprising providing a self redistribution tool, transferring redistributed chips onto a panel forming tool, forming a chip panel and separating said chip panel from panel forming tool. | 09-25-2008 |
| 20080230884 | Semiconductor device package having multi-chips with side-by-side configuration and method of the same - The present invention provides a semiconductor device package having multi-chips with side-by-side configuration comprising a substrate with die receiving through holes, connecting through holes structure and first contact pads on an upper surface and second contact pads on a lower surface of the substrate. A first die having first bonding pads and a second die having second bonding pads are respectively disposed within the die receiving through holes. The first adhesion material is formed under the first and second die and the substrate, and the second adhesion material is filled in the gap between the first and second die and sidewall of the die receiving though holes of the substrate. Further, bonding wires are formed to couple between the first bonding pads and the first contact pads, between the second bonding pads and the first contact pads. A dielectric layer is formed on the bonding wires, the first and second die and the substrate. A build up layer is form on the lower surface of substrate and the back side of first and second die. | 09-25-2008 |
| 20080265462 | PANEL/WAFER MOLDING APPARATUS AND METHOD OF THE SAME - The present invention provides an apparatus and a method for panel/wafer molding. The present invention discloses a base with a first separation layer, an upper molding base with a second separation layer, a cheap molding layer and a vacuum panel bonding machine for bonding, a curing unit, a cleaning unit and a separating unit; wherein upper molding base is rectangular or round. Therefore the present invention providing a simple, cheap universal panel/wafer molding apparatus for a round or rectangular type panel, and does no harm to the chip active surface. | 10-30-2008 |
| 20090039497 | SEMICONDUCTOR DEVICE PACKAGE HAVING A BACK SIDE PROTECTIVE SCHEME - The present invention provides a semiconductor device package, comprising a die having a back surface and an active surface formed thereon; an adhesive layer formed on the back surface of the die; a protection substrate formed on the adhesive layer; and a plurality of bumps formed on the active surface of the die for electrically connection. The present invention further provides a method for forming a semiconductor device package, comprising providing a plurality of die having a back surface and an active surface on a wafer; forming an adhesive layer on the back surface of the die; forming a protection substrates on the adhesive layer; forming a plurality of bumps on the active surface of each die; and dicing the plurality of die into individual die for singulation. | 02-12-2009 |
| 20090039532 | SEMICONDUCTOR DEVICE PACKAGE HAVING A BACK SIDE PROTECTIVE SCHEME - The present invention provides a semiconductor device package, comprising a die having a back surface and an active surface formed thereon; an adhesive layer formed on the back surface of the die; a protection substrate formed on the adhesive layer; and a plurality of bumps formed on the active surface of the die for electrically connection. The present invention further provides a method for forming a semiconductor device package, comprising providing a plurality of die having a back surface and an active surface on a wafer; forming an adhesive layer on the back surface of the die; forming a protection substrates on the adhesive layer; forming a plurality of bumps on the active surface of each die; and dicing the plurality of die into individual die for singulation. | 02-12-2009 |
| 20090096093 | INTER-CONNECTING STRUCTURE FOR SEMICONDUCTOR PACKAGE AND METHOD OF THE SAME - The interconnecting structure for a semiconductor die assembly comprises a build-up layers having RDL formed therein formed over a die having die pads formed thereon, wherein the RDL is coupled to the die pads; an isolation base having ball openings attached over the build-up layer to expose ball pads within the build-up layers; and conductive balls placed into the ball openings of the isolation base and attached on the ball pads within the build-up layers. | 04-16-2009 |
| 20090096098 | INTER-CONNECTING STRUCTURE FOR SEMICONDUCTOR PACKAGE AND METHOD OF THE SAME - The interconnecting structure for a semiconductor die assembly comprises a build-up layers having RDL formed therein formed over a die having die pads formed thereon, wherein the RDL is coupled to the die pads; an isolation base having ball openings attached over the build-up layer to expose ball pads within the build-up layers; and conductive balls placed into the ball openings of the isolation base and attached on the ball pads within the build-up layers. | 04-16-2009 |
| 20090127686 | Stacking die package structure for semiconductor devices and method of the same - The present invention disclosed a first multi-die package structure for semiconductor devices, the structure comprises a substrate having die receiving window and inter-connecting through holes formed therein; a first level semiconductor die formed under a second level semiconductor die by back-to-back scheme and within the die receiving window, wherein the first multi-die package includes first level contact pads formed under the first level semiconductor die having a first level build up layer formed there-under to couple to a first bonding pads of the first level semiconductor die; a second level contact pads formed on the second level semiconductor die having a second level build up layer formed thereon to couple to second bonding pads of the second level semiconductor die; and conductive bumps formed under the first level build up layer. | 05-21-2009 |
