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Hsien-Chin
Hsien-Chin Chang, Sanchong City TW
| Patent application number | Description | Published |
|---|---|---|
| 20100319598 | Driving Device for Thread Hooking Mechanism for Sewing Machine - A sewing machine includes upper and lower beams. A thread hooking mechanism is mounted in the lower beam. A needle plate base is mounted to an end of the lower beam. A transmission shaft rotatably extends in the lower beam and has an end extending into the needle plate base. The transmission shaft can be driven by a power source. A driving device is mounted to the end of the lower beam and includes a transmission shaft rotatably received in the needle base plate, a transmission gear fixed on the end of the transmission shaft, a driven shaft rotatably received in the needle base plate and having an end coupled to the thread hooking mechanism, and a driven gear fixed on the driven shaft and connected to the transmission gear, with the driven shaft and the thread hooking mechanism rotating at a speed higher than the transmission shaft. | 12-23-2010 |
Hsien-Chin Chiang, Sindian City TW
| Patent application number | Description | Published |
|---|---|---|
| 20090218467 | Apparatus with adjustable base - A base-adjustable apparatus includes a main device, a base plate attached on the underside of the main device and a pivot shaft. The main device defines at least two holes therebottom. The base plate has a front section defining a through hole and a rear section formed with at least one bolt to be received in the respective hole of the main device. The pivot shaft is rotatably received in the through hole of the base plate and extends outside the underside of the base plate. Moreover, the pivot shaft has one end fixed on the underside of the main device and the other end blocked outside the through hole. The length of the pivot shaft extends to such an extent that the pivot shaft together with the main body is allowed to be lifted up to a predetermined height limit higher than the bolt and be rotated. | 09-03-2009 |
Hsien-Chin Chiu, Kwei-Shan TW
| Patent application number | Description | Published |
|---|---|---|
| 20100230722 | HIGH ELECTRON MOBILITY FIELD EFFECT TRANSISTOR (HEMT) DEVICE - A High Electron Mobility Transistor (HEMT) device, which is formed by connecting a plurality of low power flip-chip type High Electron Mobility Transistor (HEMT) elements in parallel, or connected them in parallel and in series in combination into a tree-shaped structure, and then connecting said structure to an input terminal and an output terminal. Distances between each of the flip-chip type HEMT elements, from each element to said input terminal, and from each element to said output terminal are designed to be equal, such that powers consumed by each of the flip-chip type HEMT elements are equal, currents flowing through are evenly distributed, and heat generated is liable to be dissipated. A spike leakage protection layer, such as zinc-oxide (ZnO) amorphous layer or poly-crystal layer, is further included, hereby further enhancing the efficiency of said flip-chip type HEMT element and prolonging its service life. | 09-16-2010 |
Hsien-Chin Lin, Hsinchu City TW
| Patent application number | Description | Published |
|---|---|---|
| 20110207279 | INTEGRATED METHOD FOR FORMING HIGH-K METAL GATE FINFET DEVICES - Provided is a high-k metal gate structure formed over a semiconductor fin. A nitride layer is formed over the gate structure and the semiconductor fin, using two separate deposition operations, the first forming a very thin nitride film. Implantation operations such as an LDD or a PKT implant, are carried out in between the two nitride film deposition operations. The first nitride film may be SiN | 08-25-2011 |
Hsien-Chin Lin, Hsinchu TW
| Patent application number | Description | Published |
|---|---|---|
| 20110227162 | METHOD OF MAKING A FINFET, AND FINFET FORMED BY THE METHOD - A method includes forming first and second fins of a finFET extending above a semiconductor substrate, with a shallow trench isolation (STI) region in between, and a distance between a top surface of the STI region and top surfaces of the first and second fins. First and second fin extensions are provided on top and side surfaces of the first and second fins above the top surface of the STI region. Material is removed from the STI region, to increase the distance between the top surface of the STI region and top surfaces of the first and second fins. A conformal stressor dielectric material is deposited over the fins and STI region. The conformal dielectric stressor material is reflowed, to flow into a space between the first and second fins above a top surface of the STI region, to apply stress to a channel of the finFET. | 09-22-2011 |