Inventors list |
Assignees list |
Classification tree browser |
Top 100 Inventors |
Top 100 Assignees |
Hshieh
Fwa-Iuan Hshieh, Saratoga, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20100117145 | Configuration of trenched semiconductor power device to reduce masked process - A semiconductor power device formed on a semiconductor substrate of a first conductivity type wherein the semiconductor power device includes trench gates surrounded by body regions of a second conductivity type encompassing source regions of the first conductivity type therein. The semiconductor power device further includes trench contact structure having a plurality of trench contacts with trenches extended into the body regions for as source-body contacts and extended into the trench gates as gate contact. The semiconductor power device further includes a termination area wherein a plurality of the trench gate contacts are electrically connected to the source-body contacts. | 05-13-2010 |
Fwu-Iuan Hshieh, Shanghai CN
| Patent application number | Description | Published |
|---|---|---|
| 20090057756 | Trench MOSFET with Trench Termination and manufacture thereof - A trench MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) with a trench termination, including a substrate including a drain region which is strongly doped and a doping epi layer region, which is weekly doped the same type as the drain region, on the drain region; a plurality of source and body regions formed in the epi layer; a metal layer including a plurality of metal layer regions which are connected to respective source and body, and gate regions forming metal connections of the MOSFET; a plurality of metal contact plugs connected to respective metal layer regions; a plurality of gate trenches filled with polysilicon to form a plurality of trenched gates on top of epi layer; an insulating layer deposited on the epi layer formed underneath the metal layer with a plurality of metal contact holes therein for contacting respective source and body regions; a margin terminating gate trench which is around the gate trenches; and a margin terminating active region which is formed underneath the margin terminating gate trench. | 03-05-2009 |
Fwu-Iuan Hshieh, Santa Clara, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20120037954 | Equal Potential Ring Structures of Power Semiconductor with Trenched Contact - A semiconductor power device with trenched contact having improved equal potential ring (EPR) structures for device die size shrinkage and yield enhancement are disclosed. The invented semiconductor power device comprising a termination area including an equal potential ring (EPR) formed with EPR contact metal plug penetrating through an insulation layer covering top surface of epitaxial layer and extended downward into an epitaxial layer. To prevent the semiconductor power device from EPR damage induced by die pick-up nozzle at assembly stage in prior art, some preferred embodiments of the present invention without having EPR front metal. | 02-16-2012 |
| 20120037983 | Trench mosfet with integrated schottky rectifier in same cell - A semiconductor power device comprising a plurality of trench MOSFETs integrated with Schottky rectifier in same cell is disclosed. The invented semiconductor power device comprises a tilt-angle implanted drift region having higher doping concentration than epitaxial layer to reduce Vf in Schottky rectifier portion and to reduce Rds in trench MOSFET portion while maintaining a higher breakdown voltage by implementation of thick gate oxide in trench bottom of trenched gates. Furthermore, the invented semiconductor power device further comprises a Schottky barrier height enhancement region to enhance the barrier layer covered in trench bottom of trenched source-body-Schottky contact in Schottky rectifier portion. | 02-16-2012 |
Fwu-Ruan Hshieh, Saratoga, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20090305475 | Method of Manufacturing Trenched Mosfets with Embedded Schottky in the Same Cell - A method for manufacturing a trenched semiconductor power device includes a step of forming said semiconductor power device with a trenched gate surrounded by a source region encompassed in a body region above a drain region disposed on a bottom surface of a substrate. The method further includes the steps of covering the MOSFET cell with an insulation layer and applying a contact mask for opening a source-body contact trench extending through the source and body regions into an epitaxial layer underneath for filling a contact metal plug therein. And, the method further includes a step of forming an embedded Schottky diode by forming a Schottky barrier layer near a bottom of the source-body contact trench below the contact metal plug with the Schottky barrier layer having a barrier height for reducing a leakage current through the embedded Schottky diode during a reverse bias between the drain and the source. | 12-10-2009 |