| Patent application number | Description | Published |
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| 20080318358 | IMAGE SENSOR PIXEL HAVING PHOTODIODE WITH INDIUM PINNING LAYER - An active pixel using a pinned photodiode with a pinning layer formed from indium is disclosed. The pixel comprises a photodiode formed in a semiconductor substrate. The photodiode is an N | 12-25-2008 |
| 20090194671 | IMAGE SENSOR REFLECTOR - An array of pixels is formed using a substrate, where each pixel has a substrate having an incident side for receiving incident light, a photosensitive region formed in the substrate, and a reflector having a complex-shaped surface. The reflector is formed in a portion of the substrate that is opposed to the incident side such that light incident on the complex-shaped surface of the reflector is reflected towards the photosensitive region. | 08-06-2009 |
| 20090194798 | BACKSIDE ILLUMINATED IMAGING SENSOR HAVING A CARRIER SUBSTRATE AND A REDISTRIBUTION LAYER - A backside illuminated imaging sensor includes a semiconductor substrate having a front surface and a back surface. The semiconductor substrate has at least one imaging array formed on the front surface. The imaging sensor also includes a carrier substrate to provide structural support to the semiconductor substrate, where the carrier substrate has a first surface coupled to the front surface of the semiconductor substrate. A redistribution layer is formed between the front surface of the semiconductor substrate and the second surface of the carrier substrate to route electrical signals between the imaging array and a second surface of the carrier substrate. | 08-06-2009 |
| 20090200469 | ALTERNATING ROW INFRARED FILTER FOR AN IMAGE SENSOR - An image sensor includes near-infrared cut filters formed over an array of photosensitive elements in a predetermined pattern. The near-infrared cut filters may be formed over one half of a photosensitive element in a split pixel arrangement, over one half the photosensitive elements in the array, over every other photosensitive element in the array, and/or in a checkerboard pattern. | 08-13-2009 |
| 20090200580 | Image sensor and pixel including a deep photodetector - What is disclosed is an apparatus comprising a transfer gate formed on a substrate and a photodiode formed in the substrate next to the transfer gate. The photodiode comprises a shallow N-type collector formed in the substrate, a deep N-type collector formed in the substrate, wherein a lateral side of the deep N-type collector extends at least under the transfer gate, and a connecting N-type collector formed in the substrate between the deep N-type collector and the shallow N-type collector, wherein the connecting implant connects the deep N-type collector and the shallow N-type collector. Also disclosed is a process comprising forming a deep N-type collector in the substrate, forming a shallow N-type collector formed in the substrate, and forming a connecting N-type collector in the substrate between the deep N-type collector and the shallow N-type collector, wherein the connecting implant connects the deep N-type collector and the shallow N-type collector. A transfer gate is formed on the substrate next to the deep photodiode, wherein a lateral side of the deep N-type collector extends at least under the transfer gate. Other embodiments are disclosed and claimed. | 08-13-2009 |
| 20090200585 | BACKSIDE ILLUMINATED IMAGING SENSOR WITH BACKSIDE P+ DOPED LAYER - A backside illuminated imaging sensor includes a semiconductor layer having a P-type region. A frontside and backside P | 08-13-2009 |
| 20090200586 | BACKSIDE ILLUMINATED IMAGING SENSOR WITH SILICIDE LIGHT REFLECTING LAYER - A backside illuminated imaging sensor includes a semiconductor layer, a metal interconnect layer and a silicide light reflecting layer. The semiconductor layer has a front surface and a back surface. An imaging pixel that includes a photodiode region is formed within the semiconductor layer. The metal interconnect layer is electrically coupled to the photodiode region and the silicide light reflecting layer is coupled between the metal interconnect layer and the front surface of the semiconductor layer. In operation, the photodiode region receives light from the back surface of the semiconductor layer, where a portion of the received light propagates through the photodiode region to the silicide light reflecting layer. The silicide light reflecting layer is configured to reflect the portion of light received from the photodiode region. | 08-13-2009 |
| 20090200589 | BACKSIDE ILLUMINATED IMAGING SENSOR WITH IMPROVED INFRARED SENSITIVITY - A backside illuminated imaging sensor includes a semiconductor layer and an infrared detecting layer. The semiconductor layer has a front surface and a back surface. An imaging pixel includes a photodiode region formed within the semiconductor layer. The infrared detecting layer is disposed above the front surface of the semiconductor layer to receive infrared light that propagates through the imaging sensor from the back surface of the semiconductor layer. | 08-13-2009 |
| 20090200590 | IMAGE SENSOR WITH LOW ELECTRICAL CROSS-TALK - An array of pixels is formed using a substrate, where each pixel has a substrate having a backside and a frontside that includes metalization layers, a photodiode formed in the substrate, frontside P-wells formed using frontside processing that are adjacent to the photosensitive region, and an N-type region formed in the substrate below the photodiode. The N-type region is formed in a region of the substrate below the photodiode and is formed at least in part in a region of the substrate that is deeper than the depth of the frontside P-wells. | 08-13-2009 |
| 20090200622 | SELF-ALIGNED FILTER FOR AN IMAGE SENSOR - An image sensor includes at least one photosensitive element disposed in a semiconductor substrate. Metal conductors may be disposed on the semiconductor substrate. A filter may be disposed between at least two individual metal conductors and a micro-lens may be disposed on the filter. There may be insulator material disposed between the metal conductors and the semiconductor substrate and/or between individual metal conductors. The insulator material may be removed so that the filter may be disposed on the semiconductor substrate. | 08-13-2009 |
| 20090200623 | IMAGE SENSOR WITH MICRO-LENSES OF VARYING FOCAL LENGTHS - An image sensor having a plurality of micro-lenses disposed on a semiconductor substrate. A first micro-lens has a different focal length, height, shape, curvature, thickness, etc., than a second micro-lens. The image sensor may be back side illuminated or front side illuminated. | 08-13-2009 |
| 20090200624 | Circuit and photo sensor overlap for backside illumination image sensor - A backside illuminated (“BSI”) imaging sensor pixel includes a photodiode region and pixel circuitry. The photodiode region is disposed within a semiconductor die for accumulating an image charge in response to light incident upon a backside of the BSI imaging sensor pixel. The pixel circuitry includes transistor pixel circuitry disposed within the semiconductor die between a frontside of the semiconductor die and the photodiode region. At least a portion of the pixel circuitry overlaps the photodiode region. | 08-13-2009 |
| 20090200625 | BACKSIDE ILLUMINATED IMAGE SENSOR HAVING DEEP LIGHT REFLECTIVE TRENCHES - An array of pixels is formed using a substrate having a frontside and a backside that is for receiving incident light. Each pixel typically includes metallization layers included in the frontside of the substrate, a photosensitive region formed in the backside of the substrate, and a trench formed around the photosensitive region in the backside of the substrate. The trench causes the incident light to be directed away from the trench and towards the photosensitive region. | 08-13-2009 |
| 20090200626 | BACKSIDE ILLUMINATED IMAGING SENSOR WITH VERTICAL PIXEL SENSOR - A backside illuminated imaging sensor includes a vertical stacked sensor that reduces cross talk by using different silicon layers to form photodiodes at separate levels within a stack (or separate stacks) to detect different colors. Blue light-, green light-, and red light-detection silicon layers are formed, with the blue light detection layer positioned closest to the backside of the sensor and the red light detection layer positioned farthest from the backside of the sensor. An anti-reflective coating (ARC) layer can be inserted in between the red and green light detection layers to reduce the optical cross talk captured by the red light detection layer. Amorphous polysilicon can be used to form the red light detection layer to boost the efficiency of detecting red light. | 08-13-2009 |
| 20090200631 | BACKSIDE ILLUMINATED IMAGING SENSOR WITH LIGHT ATTENUATING LAYER - A backside illuminated imaging sensor includes a semiconductor substrate, a metal interconnect layer and a light attenuating layer. The semiconductor substrate has a front surface, a back surface, and includes at least one imaging pixel formed on the front surface of the semiconductor substrate. The metal interconnect layer is electrically coupled to the imaging pixel and the light attenuating layer is coupled between the metal interconnect layer and the front surface of the semiconductor substrate. In operation, the imaging pixel receives light from the back surface of the semiconductor substrate, where a portion of the received light propagates through the imaging pixel to the light attenuating layer. The light attenuating layer is configured to substantially attenuate the portion of light received from the imaging pixel. | 08-13-2009 |
| 20090201393 | Black reference pixel for backside illuminated image sensor - An imaging sensor pixel array includes a semiconductor substrate, a plurality of active pixels and at least one black reference pixel. The plurality of active pixels are disposed in the semiconductor substrate for capturing an image. Each of the active pixels includes a first region for receiving light including a p-n junction for accumulating an image charge and active pixel circuitry coupled to the first region to readout the image charge. The black reference pixel is also disposed within the semiconductor substrate for generating a black level reference value. The black reference pixel includes a second region for receiving light without a p-n junction and black pixel circuitry coupled to the photodiode region without the p-n junction to readout a black level reference signal. | 08-13-2009 |
| 20090267070 | Multilayer image sensor structure for reducing crosstalk - An image sensor pixel includes a substrate, an epitaxial layer, and a light collection region. The substrate is doped to have a first conductivity type. The epitaxial layer is disposed over the substrate and doped to have a second conductivity type opposite of the first conductivity type. The light collection region is disposed within the epitaxial layer for collecting photo-generated charge carriers. The light collection region is doped to have the first conductivity type as well. | 10-29-2009 |
| 20090294632 | GLOBALLY RESET IMAGE SENSOR PIXELS - An imaging circuit includes a pixel array that is arranged to concurrently reset pixels in a pixel array in response to a global reset signal. The pixels are arranged in rows, such that the rows can be individually selected by a row select line. A reset transistor concurrently resets the pixels by coupling a reset voltage to a floating diffusion of the pixel. A transfer gate transistor selectively couples the floating diffusion to a storage region. A storage gate transistor selectively couples the storage region to a photosensitive region so that the reset transistor, the transfer gate transistor, and the storage gate transistor for each of the pixels can be activated in response to the global reset signal. A double correlated sampler may be used to provide a correlated double sample using a first sampled voltage of a reset voltage and a second sampled voltage of a pixel voltage that is produced when a photodiode region is exposed to incident light. | 12-03-2009 |
| 20090294811 | IMAGE SENSOR WITH BACKSIDE PASSIVATION AND METAL LAYER - An image sensor includes a semiconductor layer that low-pass filters light of different wavelengths. For example, the semiconductor layer proportionately absorbs photons of shorter wavelengths and proportionately passes more photons of longer wavelengths such that the longer wavelength photons often pass through without being absorbed. An imaging pixel having a photodiode is formed on a front surface of the semiconductor layer, where the photodiode is an N | 12-03-2009 |
| 20090294858 | TRANSISTOR WITH CONTACT OVER GATE ACTIVE AREA - A transistor contact over a gate active area includes a transistor gate formed on a substrate of an integrated circuit. A gate insulator is formed beneath the transistor gate and helps define an active area for the transistor gate. An insulating layer is formed over the transistor gate. A metal contact plug is formed within a portion of the insulating layer that lies over the active area such that the metal contact plug forms an electrical contact with the transistor gate. | 12-03-2009 |
| 20090295962 | IMAGE SENSOR HAVING DIFFERING WAVELENGTH FILTERS - An image sensor includes filters formed over a portion of an array of photosensitive elements in a predetermined pattern. The pattern can be such that the exposure of a matrix (such as a 2-by-2 square of pixels) to light (such as blue light) is improved, while maintaining acceptable capability to capture light across the entire spectrum. The pattern can be such that two blue filters, one red, and one green filter is used by a 2-by-2 square matrix of pixels. The pattern can also include cyan, yellow, and magenta (CYM) filters. | 12-03-2009 |
| 20090302358 | CMOS image sensor with high full-well-capacity - An image sensor with a high full-well capacity includes a photosensitive region, a transfer gate, and sidewall spacers. The photosensitive region is formed to accumulate an image charge in response to light. The transfer gate disposed adjacent to the photosensitive region and coupled to selectively transfer the image charge from the photosensitive region to other pixel circuitry. First and second sidewall spacers are disposed on either side of the transfer gate. The first sidewall spacer closest to the photosensitive region is narrower than the second sidewall spacer. In some cases, the first sidewall spacer may be omitted. | 12-10-2009 |
| 20090302409 | IMAGE SENSOR WITH MULTIPLE THICKNESS ANTI-RELFECTIVE COATING LAYERS - An image sensor includes a substrate having a surface at which incident light is received. A pixel array is formed over and within the substrate. The pixel array includes a first and a second pixel arranged to receive light of different colors. The first pixel includes a photosensitive region formed in the substrate and has a first anti-reflective coating (ARC) layer formed over the photosensitive region. The first ARC layer has a first thickness that produces destructive interference above the first ARC layer in response to the incident light. The second pixel includes a photosensitive region formed in the substrate, and a second ARC layer formed over the photosensitive region that produces destructive interference above the second ARC layer in response to the incident light. | 12-10-2009 |
| 20100013039 | Backside-illuminated imaging sensor including backside passivation - The disclosure describes embodiments of a process comprising forming a pixel on a frontside of a substrate, the substrate having a frontside, a backside, and a thickness substantially equal to a distance between the frontside and the backside. The thickness of the substrate is reduced by removing material from the backside of the substrate to allow for backside illumination of the pixel, and the backside of the substrate is treated with a hydrogen plasma to passivate the backside. The disclosure also describes embodiments of an apparatus comprising a semiconductor wafer having a frontside, a backside, and a thickness substantially equal to a distance between the frontside and the backside, and a pixel formed on the frontside, wherein the thickness of the wafer is selected and adjusted to allow for illumination of the pixel through the backside of the wafer, and wherein the backside is treated with a hydrogen plasma to passivate the backside. | 01-21-2010 |
| 20100038523 | IMAGE SENSOR WITH BURIED SELF ALIGNED FOCUSING ELEMENT - An image sensor includes an optical sensor region, a stack of dielectric and metal layers, and an embedded layer. The optical sensor is disposed within a semiconductor substrate. The stack of dielectric and metal layers are disposed on the front side of the semiconductor substrate above the optical sensor region. The embedded focusing layer is disposed on the backside of the semiconductor substrate in a Backside Illuminated (BSI) image sensor, supported by a support grid, or a support grid composed of the semiconductor substrate. | 02-18-2010 |
| 20100084692 | IMAGE SENSOR WITH LOW CROSSTALK AND HIGH RED SENSITIVITY - A color pixel array includes first, second, and third pluralities of color pixels each including a photosensitive region disposed within a first semiconductor layer. In one embodiment, a second semiconductor layer including deep dopant regions is disposed below the first semiconductor layer. The deep dopant regions each reside below a corresponding one of the first plurality of color pixels but substantially not below the second and third pluralities of color pixels. In one embodiment, buried wells are disposed beneath the second and third pluralities of color pixels but substantially not below the first plurality of color pixels. | 04-08-2010 |
| 20100109060 | IMAGE SENSOR WITH BACKSIDE PHOTODIODE IMPLANT - An array of pixels is formed using a substrate. Each pixel can be formed on the substrate, which has a backside and a frontside that includes metalization layers. A photodiode is formed in the substrate and frontside P-wells are formed using frontside processing that are adjacent to the photosensitive region. A first N-type region is formed in the substrate below the photodiode. A second N-type region is formed in a region of the substrate below the first N-type region and is formed using backside processing. | 05-06-2010 |
| 20100117123 | IMAGE SENSOR PIXEL HAVING A LATERAL DOPING PROFILE FORMED WITH INDIUM DOPING - An active pixel using a transfer gate that has a polysilicon gate doped with indium. The pixel includes a photosensitive element formed in a semiconductor substrate and an n-type floating node formed in the semiconductor substrate. An n-channel transfer transistor having a transfer gate is formed between the floating node and the photosensitive element. The pixel substrate has a laterally doping gradient doped with an indium dopant. | 05-13-2010 |
| 20100123069 | BACKSIDE ILLUMINATED IMAGING SENSOR WITH IMPROVED ANGULAR RESPONSE - A backside illuminated imaging pixel with improved angular response includes a semiconductor layer having a front and a back surface. The imaging pixel also includes a photodiode region formed in the semiconductor layer. The photodiode region includes a first and a second n-region. The first n-region has a centerline projecting between the front and back surfaces of the semiconductor layer. The second n-region is disposed between the first n-region and the back surface of the semiconductor layer such that the second n-region is offset from the centerline of the first n-region. | 05-20-2010 |
| 20100123174 | LIGHTLY-DOPED DRAINS (LDD) OF IMAGE SENSOR TRANSISTORS USING SELECTIVE EPITAXY - Embodiments of the present invention are directed to an image sensor having pixel transistors and peripheral transistors disposed in a silicon substrate. For some embodiments, a protective coating is disposed on the peripheral transistors and doped silicon is epitaxially grown on the substrate to form lightly-doped drain (LDD) areas for the pixel transistors. The protective oxide may be used to prevent epitaxial growth of silicon on the peripheral transistors during formation of the LDD areas of the pixel transistors. | 05-20-2010 |
| 20100140675 | CMOS IMAGE SENSOR WITH IMPROVED BACKSIDE SURFACE TREATMENT - An apparatus and method for fabricating an array of backside illuminated (“BSI”) image sensors is disclosed. Front side components of the BSI image sensors are formed into a front side of the array. A dopant layer is implanted into a backside of the array. The dopant layer establishes a dopant gradient to encourage photo-generated charge carriers to migrate towards the front side of the array. At least a portion of the dopant layer is annealed. A surface treatment is formed on the backside of the dopant layer to cure surface defects. | 06-10-2010 |
| 20100144081 | IMAGE SENSOR PIXEL HAVING PHOTODIODE WITH MULTI-DOPANT IMPLANTATION - An active pixel using a photodiode with multiple species of N type dopants is disclosed. The pixel comprises a photodiode formed in a semiconductor substrate. The photodiode is an N | 06-10-2010 |
| 20100159632 | TECHNIQUE FOR FABRICATION OF BACKSIDE ILLUMINATED IMAGE SENSOR - An array of backside illuminated image sensors is fabricated using a number of processes. These processes include fabricating front side components of the backside illuminated image sensors into or onto a first side of an epitaxial layer disposed over a substrate layer. Dopants are diffused from the substrate through a second side of the epitaxial layer to create a dopant gradient band in the epitaxial layer adjacent to the substrate layer. The backside of the array is then thinned to remove the substrate layer while retaining at least a portion of the dopant gradient band in the epitaxial layer. | 06-24-2010 |
| 20100165134 | Arrayed Imaging Systems And Associated Methods - Arrayed imaging systems include an array of detectors formed with a common base and a first array of layered optical elements, each one of the layered optical elements being optically connected with a detector in the array of detectors. | 07-01-2010 |
| 20100271524 | MULTILAYER IMAGE SENSOR PIXEL STRUCTURE FOR REDUCING CROSSTALK - An image sensor pixel includes a substrate, a first epitaxial layer, a collector layer, a second epitaxial layer and a light collection region. The substrate is doped to have a first conductivity type. The first epitaxial layer is disposed over the substrate and doped to have the first conductivity type as well. The collector layer is selectively disposed over at least a portion of the first epitaxial layer and doped to have a second conductivity type. The second epitaxial layer is disposed over the collector layer and doped to have the first conductivity type. The light collection region collects photo-generated charge carriers and is disposed within the second epitaxial layer. The light collection region is also doped to have the second conductivity type. | 10-28-2010 |
| 20100289911 | IMAGE SENSOR AND PIXEL THAT HAS POSITIVE TRANSFER GATE VOLTAGE DURING INTEGRATION PERIOD - A pixel and image sensor formed in accordance with the present invention has two modes of operation: a normal mode and a low light mode. The present invention switches from a normal to a low light mode based upon the amount of illumination on the image sensor. Once the level of illumination is determined, a decision is made by comparing the level of illumination to a threshold whether to operate in normal mode or low light mode. In low light mode, the reset transistor (for a 3T pixel) or the transfer transistor (for a 4T pixel) is biased positive. | 11-18-2010 |
| 20100323470 | BACKSIDE ILLUMINATED IMAGE SENSOR HAVING DEEP LIGHT REFLECTIVE TRENCHES - An array of pixels is formed using a semiconductor layer having a frontside and a backside through which incident light is received. Each pixel typically includes a photosensitive region formed in the semiconductor layer and a trench formed adjacent to the photosensitive region. The trench causes the incident light to be directed away from the trench and towards the photosensitive region. | 12-23-2010 |
| 20110068429 | IMAGE SENSOR WITH CONTACT DUMMY PIXELS - An image sensor array includes a substrate layer, a metal layer, an epitaxial layer, a plurality of imaging pixels, and a contact dummy pixel. The metal layer is disposed above the substrate layer. The epitaxial layer is disposed between the substrate layer and the metal layer. The imaging pixels are disposed within the epitaxial layer and each include a photosensitive element for collecting an image signal. The contact dummy pixel is dispose within the epitaxial layer and includes an electrical conducting path through the epitaxial layer. The electrical conducting path couples to the metal layer above the epitaxial layer. | 03-24-2011 |
| 20110085062 | SYSTEM AND METHOD FOR IMPROVED IMAGE PROCESSING - A system and method for improving image processing. In one aspect of the invention the method includes receiving data indicating an intensity of light incident on a first pixel of a pixel array and determining from the received data if the intensity of incident light on the first pixel satisfies a first condition. A processing operation is performed on data received from a second, third and fourth pixel of the pixel array but skipped on the data received from the first pixel if the first condition is satisfied. The first condition includes whether the first pixel is substantially saturated in response to an intensity of light incident on the first pixel. | 04-14-2011 |
| 20110085067 | MULTILAYER IMAGE SENSOR PIXEL STRUCTURE FOR REDUCING CROSSTALK - An image sensor pixel includes a substrate, a first epitaxial layer, a collector layer, a second epitaxial layer and a light collection region. The substrate is doped to have a first conductivity type. The first epitaxial layer is disposed over the substrate and doped to have the first conductivity type as well. The collector layer is selectively disposed over at least a portion of the first epitaxial layer and doped to have a second conductivity type. The second epitaxial layer is disposed over the collector layer and doped to have the first conductivity type. The light collection region collects photo-generated charge carriers and is disposed within the second epitaxial layer. The light collection region is also doped to have the second conductivity type. | 04-14-2011 |
| 20110089311 | TRENCH TRANSFER GATE FOR INCREASED PIXEL FILL FACTOR - An image sensor provides high scalability and reduced image lag. The sensor includes a first imaging pixel that has a first photodiode region formed in a substrate of the image sensor. The sensor also includes a first vertical transfer transistor coupled to the first photodiode region. The first vertical transfer transistor can be used to establish an active channel. The active channel typically extends along the length of the first vertical transfer transistor and couples the first photodiode region to a floating diffusion. | 04-21-2011 |
| 20110089517 | CMOS IMAGE SENSOR WITH HEAT MANAGEMENT STRUCTURES - An image sensor includes a device wafer substrate of a device wafer, a device layer of the device wafer, and optionally a heat control structure and/or a heat sink. The device layer is disposed on a frontside of the device wafer substrate and includes a plurality of photosensitive elements disposed within a pixel array region and peripheral circuitry disposed within a peripheral circuits region. The photosensitive elements are sensitive to light incident on a backside of the device wafer substrate. The heat control structure is disposed within the device wafer substrate and thermally isolates the pixel array region from the peripheral circuits region to reduce heat transfer between the peripheral circuits region and the pixel array region. The heat sink conducts heat away from the device layer. | 04-21-2011 |
| 20110095188 | BACKSIDE ILLUMINATED IMAGING SENSOR WITH IMPROVED INFRARED SENSITIVITY - A backside illuminated imaging sensor includes a semiconductor layer and an infrared detecting layer. The semiconductor layer has a front surface and a back surface. An imaging pixel includes a photodiode region formed within the semiconductor layer. The infrared detecting layer is disposed above the front surface of the semiconductor layer to receive infrared light that propagates through the imaging sensor from the back surface of the semiconductor layer. | 04-28-2011 |
| 20110115002 | BACKSIDE ILLUMINATED IMAGING SENSOR WITH REINFORCED PAD STRUCTURE - A backside illuminated imaging sensor with reinforced pad structure includes a device layer, a metal stack, an opening and a frame. The device layer has an imaging array formed in a front side of the device layer and the imaging array is adapted to receive light from a back side of the device layer. The metal stack is coupled to the front side of the device layer where the metal stack includes at least one metal interconnect layer having a metal pad. The opening extends from the back side of the device layer to the metal pad to expose the metal pad for wire bonding. The frame is disposed within the opening to structurally reinforce the metal pad. | 05-19-2011 |
| 20110140222 | PASSIVATION PLANARIZATION - A pixel cell is formed by locating a first passivation layer over the final layer of metal lines. Subsequently, the uneven, non-uniform passivation layer is subjected to a planarization process such as chemical mechanical polishing, mechanical abrasion, or etching. A spin-on glass layer may be deposited over the non-uniform passivation layer prior to planarization. Once a uniform, flat first passivation layer is achieved over the final metal, a second passivation layer, a color filter array, or a lens forming layer with uniform thickness is formed over the first passivation layer. The passivation layers can be oxide, nitride, a combination of oxide and nitride, or other suitable materials. The color filter array layer may also undergo a planarization process prior to formation of the lens forming layer. The present invention is also applicable to other devices. | 06-16-2011 |
