| Patent application number | Description | Published |
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| 20110096591 | INFORMATION STORAGE ELEMENT AND METHOD FOR DRIVING THE SAME - Disclosed herein is an information storage element including: a word electrode includes a first magnetic material that is continuously formed and is electrically conductive; a non-magnetic film formed in contact with the first magnetic material of the word electrode; a second magnetic material connected to the first magnetic material via the non-magnetic film; a magnetization setting mechanism disposed near at least one end part of both end parts of the word electrode and sets direction of magnetization of the end part of the word electrode; a coercivity decreasing mechanism decreases coercivity of the second magnetic material; and an electrically-conductive bit electrode so formed as to serve also as the second magnetic material or be formed in parallel to the second magnetic material, the bit electrode being so continuously formed as to intersect with the word electrode. | 04-28-2011 |
| 20110123022 | RANDOM NUMBER GENERATING DEVICE, RANDOM NUMBER GENERATING METHOD, AND SECURITY CHIP - A random number generating device includes: a random number generator configured to have a plurality of random number generating elements that generate a random number in response to supply of a spin-injection current; and a temperature controller. | 05-26-2011 |
| 20110305077 | MEMORY DEVICE - Disclosed herein is a memory device, including: a memory element including a memory layer for holding therein information in accordance with a magnetization state of a magnetic material, a fixed magnetization layer which is provided on the memory layer through a non-magnetic layer and whose direction of a magnetization is fixed to a direction parallel with a film surface, and a magnetic layer which is provided on a side opposite to the fixed magnetization layer relative to the memory layer through a non-magnetic layer and whose direction of a magnetization is a direction vertical to the film surface; and a wiring through which a current is caused to flow through the memory element in a direction of lamination of the layers of the memory element. | 12-15-2011 |
| 20110310663 | METHOD FOR DRIVING STORAGE ELEMENT AND STORAGE DEVICE - Disclosed herein is a method for driving a storage element that has a plurality of magnetic layers and performs recording by utilizing spin torque magnetization reversal, the method including applying a pulse voltage having reverse polarity of polarity of a recording pulse voltage in application of the recording pulse voltage to the storage element. | 12-22-2011 |
| 20110316102 | STORAGE ELEMENT AND STORAGE DEVICE - A storage element includes: a storage layer configured to retain information based on a magnetization state of a magnetic material and include a perpendicular magnetization layer whose magnetization direction is in a direction perpendicular to a film plane, a non-magnetic layer, and a ferromagnetic layer that has an axis of easy magnetization along a direction in the film plane and has a magnetization direction inclined to a direction perpendicular to the film plane by an angle in a range from 15 degrees to 45 degrees, the storage layer being configured by stacking of the perpendicular magnetization layer and the ferromagnetic layer with intermediary of the non-magnetic layer and magnetic coupling between the perpendicular magnetization layer and the ferromagnetic layer; a magnetization pinned layer; and a non-magnetic intermediate layer. | 12-29-2011 |
| 20110316103 | STORAGE ELEMENT, METHOD FOR MANUFACTURING STORAGE ELEMENT, AND MEMORY - Disclosed herein is a storage element, including: a storage layer configured to retain information based on a magnetization state of a magnetic material; and a magnetization pinned layer configured to be provided for the storage layer with intermediary of a tunnel barrier layer, wherein the tunnel barrier layer has a thickness not less than or equal to 0.1 nm to not more than or equal to 0.6 nm and interface roughness less than 0.5 nm, and information is stored in the storage layer through change in direction of magnetization of the storage layer by applying a current in a stacking direction and injecting a spin-polarized electron. | 12-29-2011 |
| 20110317464 | PORTABLE INFORMATION APPARATUS - The present disclosure provides a portable information apparatus, including, an apparatus main body, an incidental article mounted on the apparatus main body when the portable information apparatus is used, a solid-state magnetic memory provided at a portion of the apparatus main body at which the incidental article is mounted and adapted to retain information in accordance with a magnetization state of a magnetic material, and a magnetic shield provided on the incidental article including a portion opposed to the solid-state magnetic memory when the incidental article is mounted on the apparatus main body. | 12-29-2011 |
| 20120001281 | MAGNETIC STORAGE ELEMENT AND MAGNETIC MEMORY - Disclosed herein is a magnetic storage element including: a reference layer configured to have a magnetization direction fixed to a predetermined direction; a recording layer configured to have a magnetization direction that changes due to spin injection in a direction corresponding to recording information; an intermediate layer configured to separate the recording layer from the reference layer; and a heat generator configured to heat the recording layer. A material of the recording layer is such a magnetic material that magnetization at 150° C. is at least 50% of magnetization at a room temperature and magnetization at a temperature in a range from 150° C. to 200° C. is in a range from 10% to 80% of magnetization at a room temperature. | 01-05-2012 |
| 20120002466 | STORAGE APPARATUS - Disclosed herein is a storage apparatus including a cell array configured to include storage devices arranged to form an array. Each of the storage device has: a storage layer for storing information as the state of magnetization of a magnetic substance; a fixed-magnetization layer having a fixed magnetization direction; and a tunnel insulation layer sandwiched between the storage layer and the fixed-magnetization layer. In an operation to write information on the storage layer, a write current is generated to flow in the layer-stacking direction of the storage layer and the fixed-magnetization layer in order to change the direction of the magnetization of the storage layer. The cell array is divided into a plurality of cell blocks. The thermal stability of the storage layer of any particular one of the storage devices has a value peculiar to the cell block including the particular storage device. | 01-05-2012 |
| 20120032289 | MAGNETIC MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A magnetic memory device including a memory layer having a vertical magnetization on the layer surface, of which the direction of magnetization is changed according to information; and a reference layer provided against the memory layer, and being a basis of information while having a vertical magnetization on the layer surface, wherein the memory device memorizes the information by reversing the magnetization of the memory layer by a spin torque generated when a current flows between layers made from the memory layer, the nonmagnetization layer and the reference layer, and a coercive force of the memory layer at a memorization temperature is 0.7 times or less than a coercive force at room temperature, and a heat conductivity of a center portion of an electrode formed on one side of the memory layer in the direction of the layer surface is lower than a heat conductivity of surroundings thereof. | 02-09-2012 |
| 20120043631 | MAGNETIC MEMORY ELEMENT - A magnetic memory element includes a memory layer, a reference layer, and a spin-injection layer provided between the memory layer and the reference layer. The reference layer has a structure in which at least two CoPt layers containing 20 atomic % or more and 50 atomic % or less of Pt and having a thickness of 1 nm or more and 5 nm or less are stacked with a Ru layer provided therebetween. The thickness of the Ru layer is 0.45±0.05 nm or 0.9±0.1 nm. In addition, the axis of 3-fold crystal symmetry of the CoPt layers is oriented perpendicularly to the film surface. The reference layer includes a high spin polarization layer of 1.5 nm or less containing Co or Fe as a main component at an interface with the spin-injection layer. | 02-23-2012 |
| 20120056283 | MEMORY ELEMENT AND MEMORY DEVICE - There is disclosed a memory element including a memory layer that has a magnetization perpendicular to a film face and a magnetization direction thereof varies corresponding to information; a magnetization-fixed layer that has a magnetization that is perpendicular to the film face and becomes a reference for the information stored in the memory layer; and an insulating layer that is provided between the memory layer and the magnetization-fixed layer and is formed of a non-magnetic layer, wherein an electron that is spin-polarized is injected in a lamination direction of a layered structure having the memory layer, the insulating layer, and the magnetization-fixed layer, and thereby the magnetization direction varies and a recording of information is performed with respect to the memory layer, and a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer. | 03-08-2012 |
| 20120056284 | MEMORY ELEMENT AND MEMORY DEVICE - There is disclosed a memory element which includes a layered structure. The layered structure includes a memory layer that has a magnetization perpendicular to a film face; a magnetization-fixed layer having magnetization perpendicular to the film face; an insulating layer provided between the memory layer and the magnetization-fixed layer; and a cap layer provided at a face side, which is opposite to the insulating layer-side face, of the memory layer, in which an electron that is spin-polarized is injected in a lamination direction of the layered structure, and thereby the magnetization direction of the memory layer varies and a recording of information is performed, a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer, and at least a face, which comes into contact with the memory layer, of the cap layer is formed of a Ta film. | 03-08-2012 |
| 20120056285 | MEMORY ELEMENT AND MEMORY DEVICE - There is provided a memory element including a memory layer that has magnetization perpendicular to a film face; a magnetization-fixed layer that has magnetization that is perpendicular to the film face; and an insulating layer that is provided between the memory layer and the magnetization-fixed layer, wherein an electron that is spin-polarized is injected in a lamination direction of a layered structure, and thereby the magnetization direction of the memory layer varies and a recording of information is performed, a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer, the insulating layer is formed of an oxide film, and the memory layer is formed of Co—Fe—B, a concentration of B is low in the vicinity of an interface with the insulating layer, and the concentration of B increases as it recedes from the insulating layer. | 03-08-2012 |
| 20120056286 | MEMORY ELEMENT AND MEMORY DEVICE - There is disclosed a memory element including a layered structure including a memory layer that has magnetization perpendicular to a film face and a magnetization direction thereof varies corresponding to information; a magnetization-fixed layer that has magnetization that is perpendicular to the film face; and an insulating layer that is provided between the memory layer. An electron that is spin-polarized is injected in a lamination direction of the layered structure, and thereby the magnetization direction of the memory layer varies and a recording of information is performed with respect to the memory layer, a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer, and the memory layer and the magnetization-fixed layer have a film thickness in such a manner that an interface magnetic anisotropy energy becomes larger than a diamagnetic energy. | 03-08-2012 |
| 20120057403 | MEMORY ELEMENT AND MEMORY DEVICE - There is disclosed a memory element including a memory layer that maintains information through the magnetization state of a magnetic material, a magnetization-fixed layer with a magnetization that is a reference of information stored in the memory layer, and an intermediate layer that is formed of a non-magnetic material and is provided between the memory layer and the magnetization-fixed layer. The storing of the information is performed by inverting the magnetization of the memory layer by using a spin torque magnetization inversion occurring according to a current flowing in the lamination direction of a layered structure having the memory layer, the intermediate layer, and the magnetization-fixed layer, the memory layer includes an alloy region containing at least one of Fe and Co, and a magnitude of an effective diamagnetic field which the memory layer receives during magnetization inversion thereof is smaller than the saturated magnetization amount of the memory layer. | 03-08-2012 |
| 20120061779 | MEMORY ELEMENT AND MEMORY - There is provided a memory element including a magnetic layer that includes at least one kind of element selected from a group consisting of Fe, Co, and Ni, and carbon, has a content of carbon that is equal to or greater than 3 atomic % and less than 70 atomic % with respect to a total content of Fe, Co, and Ni, and has magnetic anisotropy in a direction perpendicular to a film face; and an oxide layer that is formed of an oxide having a sodium chloride structure or a spinel structure and that comes into contact with the magnetic layer. | 03-15-2012 |
| 20120061780 | STORAGE ELEMENT AND MEMORY DEVICE - Disclosed herein is a storage element, including: a storage layer which has magnetization vertical to a film surface and in which a direction of the magnetization is changed in correspondence to information; a magnetization fixing layer which has magnetization vertical to a film surface becoming a reference of the information stored in the storage layer, which is composed of plural magnetic layers, and which has a multilayered ferri-pin structure into which the plural magnetic layers are laminated one upon another through a non-magnetic layer(s); and an insulating layer made of a non-magnetic material and provided between the storage layer and the magnetization fixing layer. | 03-15-2012 |
| 20120061781 | MEMORY ELEMENT AND MEMORY - There is provided a memory element including a magnetic layer that includes Fe | 03-15-2012 |
| 20120063217 | MEMORY ELEMENT AND MEMORY DEVICE - There is disclosed a memory element including a memory layer that has a magnetization perpendicular to a film face and a magnetization direction thereof varies corresponding to information; a magnetization-fixed layer that has a magnetization that is perpendicular to the film face; and an insulating layer that is provided between the memory layer and the magnetization-fixed layer, wherein the memory layer has a lamination structure of a Co—Fe—B layer and an element belonging to any one of 1A group, 2A group, 3A group, 5A group, or 6A group, an electron that is spin-polarized is injected in a lamination direction of a layered structure, and thereby the magnetization direction of the memory layer varies and a recording of information is performed with respect to the memory layer, a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer. | 03-15-2012 |
| 20120063220 | MEMORY ELEMENT AND MEMORY DEVICE - There is disclosed a memory element including a memory layer that has a magnetization perpendicular to a film face; a magnetization-fixed layer that has a magnetization that is perpendicular to the film face; and an insulating layer that is provided between the memory layer and the magnetization-fixed layer, wherein an electron that is spin-polarized is injected in a lamination direction of a layered structure, and thereby the magnetization direction of the memory layer varies and a recording of information is performed, a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer, and in regard to the insulating layer and the other side layer with which the memory layer comes into contact at a side opposite to the insulating layer, at least an interface that comes into contact with the memory layer is formed of an oxide film. | 03-15-2012 |
| 20120063221 | MEMORY ELEMENT AND MEMORY DEVICE - There is disclosed a memory element including a layered structure including a memory layer that has a magnetization perpendicular to a film face; a magnetization-fixed layer; and an insulating layer provided between the memory layer. An electron that is spin-polarized is injected in a lamination direction of a layered structure, a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer, in regard to the insulating layer that comes into contact with the memory layer, and the other side layer with which the memory layer comes into contact at a side opposite to the insulating layer, at least an interface that comes into contact with the memory layer is formed of an oxide film, and the memory layer includes at least one of non-magnetic metal and oxide in addition to a Co—Fe—B magnetic layer. | 03-15-2012 |
| 20120063222 | MEMORY ELEMENT AND MEMORY DEVICE - There is disclosed a memory element including a memory layer that has a magnetization perpendicular to a film face and a magnetization direction thereof varies corresponding to information; a magnetization-fixed layer that has a magnetization that is perpendicular to the film face; and an insulating layer that is provided between the memory layer and the magnetization-fixed layer, wherein an electron that is spin-polarized is injected in a lamination direction of a layered structure, and thereby the magnetization direction of the memory layer varies and a recording of information is performed with respect to the memory layer, a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer, and a Ta film is formed in such a manner that comes into contact with a face, which is opposite to the insulating layer side, of the magnetization-fixed layer. | 03-15-2012 |
| 20120148874 | STORAGE ELEMENT AND MEMORY DEVICE - A storage element including: a storage layer; a magnetization fixed layer; and an insulating layer, wherein by injecting spin-polarized electrons in a laminating direction of a layered structure that includes the storage layer, the insulating layer, and the magnetization fixed layer, the orientation of magnetization of the storage layer changes and recording of information is performed on the storage layer, and an Fe film and a film that includes Ni are formed in order from an interface side that is in contact with the insulating layer, and a graded composition distribution of Ni and Fe is formed after heating on at least one of the storage layer and the magnetization fixed layer. | 06-14-2012 |
| 20120155158 | STORAGE DEVICE AND WRITING CONTROL METHOD - A storage device is provided with a plurality of pairs of memory blocks, which have a storage layer which stores information and is configured to have a plurality of storage elements which store the information in the storage layer by the orientation of the magnetization of the storage layer being changed in accordance with the application of a writing voltage and so that selective application of the writing voltage is possible in accordance with input information to one storage element, and writing control sections, which store information which is to be written into each of the storage elements in a shift register, output one piece of information from the shift register, determine whether or not writing of the output information succeeds, and when writing has failed, the same information is output again, and when writing is successful, the next piece of information is output from the shift register. | 06-21-2012 |
| 20120175716 | STORAGE ELEMENT AND STORAGE DEVICE - A storage element includes: a storage layer which has magnetization perpendicular to a film surface, the direction of the magnetization being changed in accordance with information; a magnetization fixed layer which has magnetization perpendicular to a film surface used as a base of information stored in the storage layer; and an insulating layer of a nonmagnetic substance provided between the storage layer and the magnetization fixed layer. In the storage element described above, the magnetization of the storage layer is reversed using a spin torque magnetization reversal generated by a current flowing in a lamination direction of a layer structure including the storage layer, the insulating layer, and the magnetization fixed layer to store information, the storage layer is directly provided with a layer at a side opposite to the insulating layer, and this layer includes a conductive oxide. | 07-12-2012 |
| 20120175717 | STORAGE ELEMENT AND STORAGE DEVICE - A storage element includes: a storage layer which has magnetization perpendicular to a film surface, the direction of the magnetization being changed in accordance with information; a magnetization fixed layer which has magnetization perpendicular to a film surface used as a base of information stored in the storage layer; and an insulating layer of a nonmagnetic substance provided between the storage layer and the magnetization fixed layer. In the storage element described above, the magnetization of the storage layer is reversed using a spin torque magnetization reversal generated by a current flowing in a lamination direction of a layer structure including the storage layer, the insulating layer, and the magnetization fixed layer to store information, and the storage layer has a laminate structure including a magnetic layer and a conductive oxide. | 07-12-2012 |
| 20120182796 | STORAGE ELEMENT AND MEMORY DEVICE - A storage element includes a storage layer which has magnetization vertical to the film surface and of which the direction of magnetization changes, a magnetization fixed layer which has magnetization vertical to the film surface serving as a reference of information, and an insulating layer, and the direction of magnetization of the storage layer changes by injecting spin-polarized electrons in the laminated direction of the layer structure so as to perform information recording, the size of an effective demagnetizing field that the storage layer receives is configured to be smaller than a saturated magnetization amount of the storage layer, and a ferromagnetic layer material constituting the storage layer has CoFeB as the base material and an anti-corrosive element is added to the base material. | 07-19-2012 |
| 20120199922 | STORAGE ELEMENT AND MEMORY DEVICE - A storage element includes: a storage layer that has magnetization perpendicular to a film face, the direction of the magnetization being changed corresponding to information; a magnetization fixed layer that has magnetization perpendicular to a film face that is a reference of the information stored in the storage layer; and an insulating layer that is formed of a nonmagnetic body provided between the storage layer and the magnetization fixed layer. The magnetization fixed layer has a structure in which the nonmagnetic layer is interposed between upper and lower ferromagnetic layers which have a laminated ferri-pinned structure of magnetically anti-parallel coupling. The direction of the magnetization of the storage layer is changed by injecting spin-polarized electrons in a lamination direction of a layer structure having the storage layer, the insulating layer, and the magnetization fixed layer, and recording of the information is performed on the storage layer. | 08-09-2012 |
| Patent application number | Description | Published |
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| 20080254300 | Resin Composition, Resin-Attached Metal Foil, Base Material-Attached Insulating Sheet and Multiple-Layered Printed Wiring Board - A multiple-layered printed wiring board is manufactured, which exhibits higher thermal resistance and lower thermal expansion so that no flaking and/or no crack would be occurred in a thermal shock test such as a cooling-heating cycle test and the like, in addition to exhibiting a fire retardancy. The present invention is directed to a resin composition, capable of being employed for forming a resin layer of a resin-attached metal foil or an insulating sheet of a base material-attached insulating sheet, and comprises: a cyanate resin and/or a prepolymer thereof; an epoxy resin substantially containing no halogen atom; a phenoxy resin substantially containing no halogen atom; an imidazole compound; and an inorganic filler, and also directed to a resin-attached metal foil formed by cladding a metal foil with such resin composition, a base material-attached insulating sheet formed by cladding an insulating base material therewith, and a multiple-layered printed wiring board, formed by laying such resin-attached metal foil(s) or such base material-attached insulating sheet(s) on a single side or both sides of an internal layer circuit board, and hot pressure forming thereof. | 10-16-2008 |
| 20090039487 | SEMICONDUCTOR DEVICE - A semiconductor device comprises a source frame having a die pad; a linear gate frame having a bonding pad; a semiconductor chip mounted on the die pad; wires which electrically connect a source terminal of the semiconductor chip to the die pad and electrically connect a gate terminal of the semiconductor chip to the bonding pad; and resin which seals the die pad, the bonding pad, the semiconductor chip, and the wires. The die pad is spaced from the bonding pad and diagonal to an extending direction of the gate frame, in the vicinity of the bonding pad. | 02-12-2009 |
| 20090126974 | Manufacturing Process for a Prepreg with a Carrier, Prepreg with a Carrier, Manufacturing Process for a Thin Double-Sided Plate, Thin Double-Sided Plate and Manufacturing Process for a Multilayer-Printed Circuit Board - A process for manufacturing a prepreg with a carrier exhibiting excellent impregnating properties and thickness precision, which is particularly suitably used for preparing a build-up type multilayer-printed circuit board is provided. Also, a prepreg with a carrier prepared by the manufacturing process and a process for manufacturing a multilayer-printed circuit board utilizing the prepreg with a carrier are provided. There is provided a process for continuously manufacturing a prepreg with a carrier comprising an insulating resin layer having a backbone material of a textile fabric, (a) laminating the insulating resin layer side of a first and a second carriers comprising an insulating resin layer on one side on the both sides of the textile fabric, respectively, to form a laminate and bonding them under a reduced pressure, and (b) after the bonding, heating the laminate at a temperature equal to or higher than a melting point of the insulating resin. | 05-21-2009 |
| 20090166060 | Insulating Resin Layer, Insulating Resin Layer With Carrier And Multiple-Layered Printed Wiring Board - An insulating resin layer, which is capable of being employed for forming a multiple-layered printed wiring board via a thermal compression forming process, comprising: at least one first layer and at least one second layer being stacked, wherein a specific dielectric constant of the first layer at a frequency of 1 MHz after the thermal compression forming is not more than 3.2, and wherein a linear expansion coefficient of the second layer at a temperature within a range of from not lower than 35 degree C. to not higher than 85 degree C. after the thermal compression forming is not more than 40 ppm/degree C. A multiple-layered printed wiring board, formed by disposing the aforementioned insulating resin layer over at least one side of an internal layer circuit board, and then conducting a thermal compression forming process. | 07-02-2009 |
| 20090302462 | Prepreg, Method for Manufacturing Prepreg, Substrate, and Semiconductor Device - A prepreg which can meet a demand for thickness reduction is provided. The prepreg has first and second resin layers having different applications, functions, capabilities, or properties, and allows an amount of a resin composition in each of the first and second resin layers to be set appropriately depending on a circuit wiring portion to be embedded into the second resin layer. Further, a method for manufacturing the above prepreg, and a substrate and a semiconductor device having the prepreg are also provided. The prepreg according to the present invention includes a core layer including a sheet-shaped base member and having one surface and the other surface which is opposite to the one surface, the first resin layer provided on the one surface of the core layer and formed of a first resin composition, and the second resin layer provided on the other surface of the core layer and formed of a second resin composition, wherein at least one of a requirement that a thickness of the first resin layer is different from that of the second resin layer and a requirement that a constitution of the first resin composition is different from that of the second resin composition is satisfied. | 12-10-2009 |
| 20090321919 | SEMICONDUCTOR DEVICE - The semiconductor device | 12-31-2009 |
| 20100300619 | PREPREG, METHOD FOR MANUFACTURING PREPREG, SUBSTRATE, AND SEMICONDUCTOR DEVICE - A prepreg which can meet a demand for thickness reduction is provided. The prepreg has first and second resin layers having different applications, functions, capabilities, or properties, and allows an amount of a resin composition in each of the first and second resin layers to be set appropriately depending on a circuit wiring portion to be embedded into the second resin layer. Further, a method for manufacturing the above prepreg, and a substrate and a semiconductor device having the prepreg are also provided. The prepreg according to the present invention includes a core layer including a sheet-shaped base member and having one surface and the other surface which is opposite to the one surface, the first resin layer provided on the one surface of the core layer and formed of a first resin composition, and the second resin layer provided on the other surface of the core layer and formed of a second resin composition, wherein at least one of a requirement that a thickness of the first resin layer is different from that of the second resin layer and a requirement that a constitution of the first resin composition is different from that of the second resin composition is satisfied. | 12-02-2010 |
| 20110120630 | MANUFACTURING PROCESS FOR A PREPREG WITH A CARRIER, PREPREG WITH A CARRIER, MANUFACTURING PROCESS FOR A THIN DOUBLE-SIDED PLATE, THIN DOUBLE-SIDED PLATE AND MANUFACTURING PROCESS FOR A MULTILAYER-PRINTED CIRCUIT BOARD - A process for manufacturing a prepreg with a carrier exhibiting excellent impregnating properties and thickness precision, which is particularly suitably used for preparing a build-up type multilayer-printed circuit board is provided. Also, a prepreg with a carrier prepared by the manufacturing process and a process for manufacturing a multilayer-printed circuit board utilizing the prepreg with a carrier are provided. There is provided a process for continuously manufacturing a prepreg with a carrier comprising an insulating resin layer having a backbone material of a textile fabric, (a) laminating the insulating resin layer side of a first and a second carriers comprising an insulating resin layer on one side on the both sides of the textile fabric, respectively, to form a laminate and bonding them under a reduced pressure, and (b) after the bonding, heating the laminate at a temperature equal to or higher than a melting point of the insulating resin. | 05-26-2011 |
| 20110256367 | PREPREG, METHOD FOR MANUFACTURING PREPREG, SUBSTRATE, AND SEMICONDUCTOR DEVICE - A prepreg which can meet a demand for thickness reduction is provided. The prepreg has first and second resin layers having different applications, functions, capabilities, or properties, and allows an amount of a resin composition in each of the first and second resin layers to be set appropriately depending on a circuit wiring portion to be embedded into the second resin layer. Further, a method for manufacturing the above prepreg, and a substrate and a semiconductor device having the prepreg are also provided. The prepreg according to the present invention includes a core layer including a sheet-shaped base member and having one surface and the other surface which is opposite to the one surface, the first resin layer provided on the one surface of the core layer and formed of a first resin composition, and the second resin layer provided on the other surface of the core layer and formed of a second resin composition, wherein at least one of a requirement that a thickness of the first resin layer is different from that of the second resin layer and a requirement that a constitution of the first resin composition is different from that of the second resin composition is satisfied. | 10-20-2011 |
