Patent application number | Description | Published |
20080217787 | MICRO-ELECTROMECHANICAL DEVICE AND MANUFACTURING METHOD THEREOF - A micro-electromechanical device includes a substrate, a first patterned conductive layer, a second patterned conductive layer and a first patterned blocking layer. The first patterned conductive layer is disposed on the substrate. The second patterned conductive layer is disposed on the first patterned conductive layer. The first patterned blocking layer is connected with the first patterned conductive layer and the second patterned conductive layer. In addition, a method of manufacturing the micro-electromechanical device is also disclosed. | 09-11-2008 |
20080283859 | LIGHT-EMITTING DIODE APPARATUS AND MANUFACTURING METHOD THEREOF - A light-emitting diode (LED) apparatus includes an epitaxial multilayer, a micro/nano rugged layer and an anti-reflection layer. The epitaxial multilayer has a first semiconductor layer, an active layer and a second semiconductor layer in sequence. The micro/nano rugged layer is disposed on the first semiconductor layer of the epitaxial multilayer. The anti-reflection layer is disposed on the micro/nano rugged layer. In addition, a manufacturing method of the LED apparatus is also disclosed. | 11-20-2008 |
20080296598 | CURRENT SPREADING LAYER WITH MICRO/NANO STRUCTURE, LIGHT-EMITTING DIODE APPARATUS AND ITS MANUFACTURING METHOD - A light-emitting diode (LED) apparatus includes an epitaxial layer and a current spreading layer. The epitaxial layer has a first semiconductor layer, an active layer and a second semiconductor layer. The current spreading layer is disposed on the first semiconductor layer of the epitaxial layer and has a micro/nano roughing structure layer and a transparent conductive layer. The micro/nano roughing structure layer has a plurality of hollow parts, and the transparent conductive layer covers a surface of the micro/nano roughing structure layer and is filled within the hollow parts. In addition, a manufacturing method of the LED apparatus and a current spreading layer with a micro/nano structure are also disclosed. | 12-04-2008 |
20090046478 | BACKLIGHT MODULE AND OPTICAL FILM THEREOF - An optical film includes a substrate and at least one pyramid-like structure. The pyramid-like structure is disposed on one surface of the substrate and has a base, a first face, a second face and a third face. The first, second and third faces are connected together and disposed along the base. | 02-19-2009 |
20090072259 | LIGHT-EMITTING DIODE APPARATUS AND MANUFACTURING METHOD THEREOF - A light-emitting diode (LED) apparatus includes a thermoconductive substrate, a thermoconductive adhesive layer, an epitaxial layer, a current spreading layer and a micro- or nano-roughing structure. The thermoconductive adhesive layer is disposed on the thermoconductive substrate. The epitaxial layer is disposed opposite to the thermoconductive adhesive layer and has a first semiconductor layer, an active layer and a second semiconductor layer. The current spreading layer is disposed between the second semiconductor layer of the epitaxial layer and the thermoconductive adhesive layer. The micro- or nano-roughing structure is disposed on the first semiconductor layer of the epitaxial layer. In addition, a manufacturing method of the LED apparatus is also disclosed. | 03-19-2009 |
20110285319 | LIGHT SOURCE MODULE - A light source module is provided. The light source module includes a full wave rectifier, a constant current output integrated circuit (IC) and at least one high operating voltage light emitting diode (HVLED) die coupled between the constant current output IC and a ground. The full wave rectifier generates a rectified signal according to an alternating current (AC) power. The constant current output IC outputs a constant current signal according to the rectified signal. A brightness of the HVLED die is determined by the constant current signal. | 11-24-2011 |
20110286210 | LED LIGHT SOURCE IN A SINGLE-PACKAGE FOR RAISING COLOR-RENDERING INDEX - A LED light source in a single package for raising the color-rendering index is provided. The LED light source comprises a substrate, at least one covering layer, a primary light source, and a secondary light source. The primary and the secondary light sources are formed on the substrate and coated with the at least one covering layer to provide a first output light and a second output light, respectively. The total output light is a mixed color of the first output light and the second output light. | 11-24-2011 |
20110300650 | LIGHT-EMITTING DIODE APPARATUS AND MANUFACTURING METHOD THEREOF - A light-emitting diode (LED) apparatus includes a thermoconductive substrate, a thermoconductive adhesive layer, an epitaxial layer, a current spreading layer and a micro- or nano-roughing structure. The thermoconductive adhesive layer is disposed on the thermoconductive substrate. The epitaxial layer is disposed opposite to the thermoconductive adhesive layer and has a first semiconductor layer, an active layer and a second semiconductor layer. The current spreading layer is disposed between the second semiconductor layer of the epitaxial layer and the thermoconductive adhesive layer. The micro- or nano-roughing structure is disposed on the first semiconductor layer of the epitaxial layer. In addition, a manufacturing method of the LED apparatus is also disclosed. | 12-08-2011 |
20130088851 | LIGHTING MODULE AND LIGHTING DEVICE THEREOF - A lighting device is provided, which includes a substrate, at least one lighting element and at least one optical element. The lighting element is disposed on the substrate, wherein the lighting element produces light. The optical element, disposed on a light-emitting path of the light, wherein the optical element includes a base and a refractive portion. The base includes a first end and second end, wherein the second end is thinner than the first end. The refractive portion is connected to the second end of the base, wherein the refractive portion includes a curved surface. | 04-11-2013 |
20130248906 | LIGHT EMITTING DIODE PACKAGE STRUCTURE AND METHOD FOR FABRICATING THE SAME - The invention provides a light emitting diode package structure and a method for fabricating the same. The package structure includes: a light emitting diode chip formed on a substrate; a first hydrophobic rib layer formed on the substrate and surrounding the light emitting diode; and a first cover layer formed on the substrate and covering the light emitting diode, wherein the first hydrophobic rib layer is used as a border of the first cover layer and an angle between the facet of the first cover layer and the substrate is about 60-90 degrees. | 09-26-2013 |
20130285087 | LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - A light emitting device and manufacturing method thereof are disclosed. The light emitting device includes a substrate, a LED die, a first transparent layer, an optical wavelength conversion layer and a second transparent layer. The substrate has a die glue part. The LED die is disposed on the die glue part and has a base which is made of a transparent material. The first transparent layer is disposed on the side surface of the LED die. The optical wavelength conversion layer is evenly formed on the first transparent layer and the LED die. The second transparent layer is formed on the optical wavelength conversion layer. | 10-31-2013 |
20130320375 | OPTOELECTRONIC DEVICE AND METHOD FOR FORMING THE SAME - According to an embodiment of the invention, an optoelectronic device is provided. The optoelectronic device includes: a lead frame having a reflective structure, wherein the reflective structure has an opening; an optoelectronic element disposed in the opening; at least one electrode disposed in the lead frame and electrically connected to the optoelectronic element; a lens disposed on the lead frame and having an adhesive portion having a holding surface, an alignment surface, and an adhesive surface, wherein the adhesive surface has a convex surface or a concave surface; and a covering adhesive layer filling a region defined by the reflective structure, covering the optoelectronic element, and adhering the lens to the lead frame through the adhesive portion of the lens. | 12-05-2013 |