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Hoon Kim
Hoon Kim, Suwon-Si KR
| Patent application number | Description | Published |
|---|---|---|
| 20080240719 | METHOD AND APPARATUS FOR ESTABLISHING SYSTEM DELAY TIME AND FRAME LENGTH IN TIME DIVISION DUPLEXING SYSTEM - A method of establishing a system delay time and a frame length in a Time Division Duplexing (TDD) system includes adjusting time lengths of an uplink (UL) frame, a downlink (DL) frame, a Transmit/receive Transition Gap (TTG), and a Receive/transmit Transition Gap (RTG); a Base Station (BS) transmitting a DL frame and receiving a UL frame; and a Mobile Station (MS) receiving the DL frame and transmitting the UL frame. | 10-02-2008 |
| 20080265764 | DISPLAY DEVICE AND METHOD AND APPARATUS FOR MANUFACTURING THE SAME - A display device includes a first substrate, a second substrate and a blocking member. The first substrate has a light emitting element. The second substrate faces the first substrate. The blocking member is arranged between the first and second substrates. The blocking member includes a first blocking layer and a second blocking layer. | 10-30-2008 |
| 20110104591 | Methods of Fabricating Halftone Phase Shift Blank Photomasks and Halftone Phase Shift Photomasks - Halftone phase shift photomasks are provided including a substrate configured to transmit light; a shift pattern on the substrate, the shift pattern including a pattern area on a center portion of the substrate and a blind area disposed on a periphery of the substrate, the shift pattern of the blind area having a greater thickness than a thickness that of the pattern area, and being configured to partially transmit the light; and a light shielding pattern formed on the shift pattern in the blind area and being configured to shield the light. Related methods are also provided herein. | 05-05-2011 |
Hoon Kim, Siheung-Si KR
| Patent application number | Description | Published |
|---|---|---|
| 20110086296 | PHASE SHIFT MASKS - A phase shift mask having a first region and a second region in a transverse direction includes a transparent layer, a phase shift pattern disposed in the first region, a transmittance control layer pattern disposed in the second region, and a shading layer pattern disposed on the transmittance control layer pattern. The phase shift pattern has a first pattern including a transparent material and a second pattern including metal. The phase shift mask may prevent haze effects through a cleaning process using an alkaline cleaning solution. | 04-14-2011 |
Hoon Kim, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20100144027 | PLACENTAL PROTEIN HAVING A REGULATING ACTION ON PROTEOLYTIC ACTIVITY AND ITS RELATED GENE - The present invention is intended to provide a novel pharmaceutical composition containing a protein that does not have a known protein motif structure but has proteolytic activity and regulating action on the activity of other proteases, cell invasiveness and smooth muscle contraction and relaxation, and is capable of treating, preventing and diagnosing various diseases. The invention provides a pharmaceutical composition for the treatment, prevention or diagnosis of a disease selected from the group consisting of perinatal diseases, infertility, cancer, nervous system diseases, inflammatory diseases, immune diseases, cardiovascular diseases, endocrine diseases, viral infections, bacterial infections and prion diseases, which contains a protein shown in Sequence listing 1 or an antibody specific thereto. Furthermore, the invention also provides a recombinant vector for the treatment, prevention or diagnosis of a disease selected from the group consisting of perinatal diseases, infertility, cancer, nervous system diseases, inflammatory diseases, immune diseases, cardiovascular diseases, endocrine diseases, viral infections, bacterial infections and prion diseases, which contains a gene shown in Sequence listing 2 and encoding the protein shown in Sequence listing 1 or a gene shown in Sequence listing 3 or 4, and being a splice variant thereof. | 06-10-2010 |
Hoon Kim, Cambridge, MA US
| Patent application number | Description | Published |
|---|---|---|
| 20080254232 | COBALT NITRIDE LAYERS FOR COPPER INTERCONNECTS AND METHODS FOR FORMING THEM - An interconnect structure for integrated circuits incorporates a layer of cobalt nitride that facilitates the nucleation, growth and adhesion of copper wires. The cobalt nitride may deposited on a refractory metal nitride or carbide layer, such as tungsten nitride or tantalum nitride, that serves as a diffusion barrier for copper and also increases the adhesion between the cobalt nitride and the underlying insulator. The cobalt nitride may be formed by chemical vapor deposition from a novel cobalt amidinate precursor. Copper layers deposited on the cobalt nitride show high electrical conductivity and can serve as seed layers for electrochemical deposition of copper conductors for microelectronics. | 10-16-2008 |
| 20090263965 | SELF-ALIGNED BARRIER LAYERS FOR INTERCONNECTS - An interconnect structure for integrated circuits incorporates manganese silicate and manganese silicon nitride layers that completely surrounds copper wires in integrated circuits and methods for making the same are provided. The manganese silicate forms a barrier against copper diffusing out of the wires, thereby protecting the insulator from premature breakdown, and protecting transistors from degradation by copper. The manganese silicate and manganese silicon nitride also promote strong adhesion between copper and insulators, thus preserving the mechanical integrity of the devices during manufacture and use. The strong adhesion at the copper-manganese silicate and manganese silicon nitride interfaces also protect against failure by electromigration of the copper during use of the devices. The manganese-containing sheath also protects the copper from corrosion by oxygen or water from its surroundings. | 10-22-2009 |
| 20110233780 | COBALT NITRIDE LAYERS FOR COPPER INTERCONNECTS AND METHODS FOR FORMING THEM - An interconnect structure for integrated circuits incorporates a layer of cobalt nitride that facilitates the nucleation, growth and adhesion of copper wires. The cobalt nitride may deposited on a refractory metal nitride or carbide layer, such as tungsten nitride or tantalum nitride, that serves as a diffusion barrier for copper and also increases the adhesion between the cobalt nitride and the underlying insulator. The cobalt nitride may be formed by chemical vapor deposition from a novel cobalt amidinate precursor. Copper layers deposited on the cobalt nitride show high electrical conductivity and can serve as seed layers for electrochemical deposition of copper conductors for microelectronics. | 09-29-2011 |
| 20110254164 | SELF-ALIGNED BARRIER LAYERS FOR INTERCONNECTS - An interconnect structure for integrated circuits incorporates manganese silicate and manganese silicon nitride layers that completely surrounds copper wires in integrated circuits and methods for making the same are provided. The manganese silicate forms a barrier against copper diffusing out of the wires, thereby protecting the insulator from premature breakdown, and protecting transistors from degradation by copper. The manganese silicate and manganese silicon nitride also promote strong adhesion between copper and insulators, thus preserving the mechanical integrity of the devices during manufacture and use. The strong adhesion at the copper-manganese silicate and manganese silicon nitride interfaces also protect against failure by electromigration of the copper during use of the devices. The manganese-containing sheath also protects the copper from corrosion by oxygen or water from its surroundings. | 10-20-2011 |
Hoon Kim, Seoul KR
| Patent application number | Description | Published |
|---|---|---|
| 20090151441 | TIRE PRESSURE ADJUSTING SYSTEM OF VEHICLE AND METHOD OF CONTROLLING THE SAME - A tire pressure adjusting system of a vehicle includes: a sensor mounted in a tire, to measure pressure and/or temperature of air in the tire, and to send a signal corresponding to the pressure and/or temperature; a magnetic field generator mounted on the vehicle body near the tire, to receive the signal from the sensor, and to generate a magnetic field; a current generator mounted in the tire, to generate electricity by using the magnetic field; and an electric heating member mounted in the tire, to generate heat by using the electricity supplied from the current generator, thereby heating the air in the tire. A method of controlling tire pressure includes determining whether the pressure is too low; and, if the pressure is too low, heating air in the tire until the pressure is not too low. | 06-18-2009 |
| 20090160991 | UNIT PIXEL FOR USE IN CMOS IMAGE SENSOR - A unit pixel of a CMOS image sensor includes one PMOS for receiving light and generating electric signals and one NMOS that outputs the signals applied from the PMOS. Therefore, the pitch size of the pixel itself can be reduced, and the whole area by the image sensor can be also reduced. The present unit pixel improves image embodying characteristics even at low illumination, and does not require integration time, thereby enabling production of a moving picture at high speed. Further, the present unit pixel of the image sensor is formed using only a simple MOS process, which dramatically simplifies the fabrication steps. Therefore, process yield can be improved, while production cost savings can be realized. According to the present discussion, the unit pixel of a CMOS image sensor formed on a P type semiconductor substrate, includes an N type doped well, a PMOS for receiving light and generating electric signals, and an NMOS for outputting the signals from the PMOS. | 06-25-2009 |
| 20090170248 | METHOD FOR MANUFACTURING THIN FILM TRANSISTOR - A method for manufacturing a thin film transistor with improved current characteristics and high electron mobility. According to the method, when an amorphous silicon thin film is crystallized into a polycrystalline silicon thin film by metal-induced crystallization, annealing conditions of the amorphous silicon thin film and the amount of a metal catalyst doped into the amorphous silicon thin film are optimized to reduce the regions of a metal silicide distributed at grain boundaries of the polycrystalline silicon thin film. In addition, oxygen (O | 07-02-2009 |
| 20090219427 | IMAGE SENSOR AND IMAGE DATA PROCESSING METHOD - An image sensor and a method for processing image data, can reduce a large proportion of data signals corresponding to high illumination and a small proportion of data signals corresponding to low illumination in order to generate an image just like the original, by adjusting the reset sampling period pertaining to the data signals outputted from a unit pixel. The image sensor includes a first switch which is operated by a reset sampling signal for sampling reset voltage when a voltage drop in an image data signal occurs, in which the image data signal is applied from a picture element part, a first capacitor for storing the reset voltage applied from the first switch, a second switch which is operated by a data sampling signal for sampling data voltage after completion of the voltage drop in the image data signal, a second capacitor for storing the data voltage from the second switch, and an image data processing circuit equipped with a comparator for comparing the reset voltage with the data voltage. | 09-03-2009 |
Hoon Kim, Asan-Si KR
| Patent application number | Description | Published |
|---|---|---|
| 20090135322 | THIN FILM TRANSISTOR SUBSTRATE, LIQUID CRYSTAL DISPLAY DEVICE HAVING THE SAME AND METHOD OF MANUFACTURING THE SAME - A thin film transistor (“TFT”) substrate includes first through third TFTs, first and second sub pixel electrodes, and a voltage down capacitor. A control terminal and an input terminal of the first and the second TFT are connected to an (N- | 05-28-2009 |
Hoon Kim, Yongin-City KR
| Patent application number | Description | Published |
|---|---|---|
| 20110187629 | FLAT PANEL DISPLAY APPARATUS AND ORGANIC LIGHT-EMITTING DISPLAY APPARATUS - A flat panel display apparatus includes a substrate; a display unit which is formed on the substrate and displays an image; a metal sheet which faces towards the substrate; a sealant which fills the entire free space between the substrate and the metal sheet and seals the space between the substrate and the metal sheet; and a polymer layer which is disposed on a surface of the metal sheet and has a lower thermal expansion coefficient than the metal sheet. An organic light-emitting display (OLED) apparatus including a sealant which fills an entire space between a substrate and a metal sheet is also disclosed. | 08-04-2011 |
| 20110206887 | LAMINATION SHEET AND METHOD FOR MANUFACTURING THE SAME - A lamination sheet includes a base film; a laminated material layer applied on the base film; and a cover film disposed on the laminated material layer, wherein the laminated material layer is interposed between the base film and the cover film and one edge of the base film comprising a base film removing tab extending beyond one edge of the laminated material layer and the base film removing tab not overlapping the laminated material layer; one edge of the cover film comprising a cover film removing tab extending beyond one edge of the laminated material layer and the cover film removing tab not overlapping the laminated material layer; and at least a part of the base film removing tab is formed not to overlap the cover film removing tab. A method for manufacturing a lamination sheet is also provided. | 08-25-2011 |
| 20110248907 | DISPLAY APPARATUS - A display apparatus having an improved function for encapsulating a display unit, and comprising a substrate, wherein the display unit is disposed on the substrate; an encapsulation unit facing the display unit, the encapsulation unit comprising: a metal layer; and a composite member; and a sealing unit disposed between the substrate and the encapsulation unit and separated from the display unit so as to adhere the substrate to the encapsulation unit, wherein the composite member comprises a resin matrix and carbon fibers, and wherein the metal layer is disposed between the substrate and the composite member. | 10-13-2011 |
| 20110273077 | ORGANIC LIGHT EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided is an organic light emitting device, which is flexible and is capable of effectively preventing permeation of oxygen or moisture. The organic light emitting device includes a substrate; a metal sheet that faces the substrate; an organic light emitting unit that is interposed between the substrate and the metal sheet; an adhesive unit that is interposed between the substrate and the metal sheet to adhere the substrate and the metal sheet to each other and that is located around at least the organic light emitting unit; and an adhesive layer that is formed at a location on the metal sheet where the metal sheet contacts the adhesive unit and that is formed of a metal oxide or a metal nitride. | 11-10-2011 |
Hoon Kim, Santa Clara, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20110233778 | FORMATION OF LINER AND BARRIER FOR TUNGSTEN AS GATE ELECTRODE AND AS CONTACT PLUG TO REDUCE RESISTANCE AND ENHANCE DEVICE PERFORMANCE - The invention provides a method of forming a film stack on a substrate, comprising depositing a tungsten nitride layer on the substrate, subjecting the substrate to a nitridation treatment using active nitrogen species from a remote plasma, and depositing a conductive bulk layer directly on the tungsten nitride layer without depositing a tungsten nucleation layer on the tungsten nitride layer as a growth site for tungsten. | 09-29-2011 |
| 20110263115 | NMOS METAL GATE MATERIALS, MANUFACTURING METHODS, AND EQUIPMENT USING CVD AND ALD PROCESSES WITH METAL BASED PRECURSORS - Embodiments of the invention generally provide methods for depositing metal-containing materials and compositions thereof. The methods include deposition processes that form metal, metal carbide, metal silicide, metal nitride, and metal carbide derivatives by a vapor deposition process, including thermal decomposition, CVD, pulsed-CVD, or ALD. In one embodiment, a method for processing a substrate is provided which includes depositing a dielectric material having a dielectric constant greater than 10, forming a feature definition in the dielectric material, depositing a work function material conformally on the sidewalls and bottom of the feature definition, and depositing a metal gate fill material on the work function material to fill the feature definition, wherein the work function material is deposited by reacting at least one metal-halide precursor having the formula MX | 10-27-2011 |
Hoon Kim, San Jose, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20110298062 | METAL GATE STRUCTURES AND METHODS FOR FORMING THEREOF - Metal gate structures and methods for forming thereof are provided herein. In some embodiments, a method for forming a metal gate structure on a substrate having a feature formed in a high k dielectric layer may include depositing a first layer within the feature atop the dielectric layer; depositing a second layer comprising cobalt or nickel within the feature atop the first layer; and depositing a third layer comprising a metal within the feature atop the second layer to fill the feature, wherein at least one of the first or second layers forms a wetting layer to form a nucleation layer for a subsequently deposited layer, wherein one of the first, second, or third layers forms a work function layer, and wherein the third layer forms a gate electrode. | 12-08-2011 |