Hooker
Daniel Hooker, Buckinghamshire GB
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20090271396 | METHOD AND APPARATUS FOR MEDIA CONTENT PROVISION - Disclosed is a method of providing relevant media content to a user, comprising: storing static data relating to the user's personal profile; providing a choice of media items to the user and allowing the user to select at least one media item from the choice for inclusion in a single media entity to be provided to a media device of the user; selecting at least one relevant media item from a set of additional media items in dependence upon at least some of the static data and at least some of any metadata associated with the or each media item selected by the user; concatenating the at least one user-selected media item and the at least one selected relevant media item to form the single media entity; and sending the single media entity to the user's media device. | 10-29-2009 |
David James Hooker, Melbourne AU
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20120064528 | METHODS AND REAGENTS FOR QUANTIFYING NUCLEIC ACID FRAGMENTATION AND APOPTOSIS (QLM-PCR, CELL NUMBER QPCR AND APOQPCR) - A method for quantifying apoptosis in absolute terms in a cellular sample by real-time ligation-mediated PCR, the method comprising: (a) obtaining first control genomic nucleic acid which is apoptotic nucleic acid from a cellular sample that is substantially 100% apoptotic; (b) obtaining test genomic nucleic acid derived from a test cellular sample; (c) subjecting a plurality of different known concentrations of first control genomic nucleic acid to real-time apoptosis-specific multi-product PCR in the presence of a nucleic acid-binding fluorophore or other detectable tag to obtain a threshold cycle number (Ct) or other equivalent value at different nucleic acid concentrations and establishing a linear numerical relationship between Ct or equivalent value and apoptotic nucleic acid concentration; (d) subjecting test nucleic acid to real-time apoptosis-specific multi-product PCR in the presence of a nucleic acid-binding fluorophore or other detectable tag to obtain a Ct or other equivalent value; and (e) establishing the quantity of apoptotic nucleic acid in the test nucleic acid, which corresponds numerically to the concentration of nucleic acid in (c) which determines the Ct or equivalent value obtained in (d). A standard composition of isolated genomic nucleic acid comprising substantially 100% apoptotic nucleic acid or comprising apoptotic nucleic acid as a predetermined proportion of an isolated nucleic acid sample. A kit comprising same. | 03-15-2012 |
Guy Alexander Hooker, Christchurch NZ
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20110135097 | Updating Encryption Keys in a Radio Communication System - Encryption keys in a communication system are updated according to rekey groups having a common set of encryption keys or CKRs. Each group includes a number of radios with active and inactive keysets. A database records the relationships between rekey groups and keys, and the status of their keysets. An operator first determines one or more keys to be updated. New keys are then transmitted to each radio in one or more rekey groups using respective rekey messages. The new keys are stored in the inactive keysets of the radios. The inactive keysets are then activated using respective changeover messages. Deployment of new keys is carried out by software in the form of automated update tasks. | 06-09-2011 |
Jacob Hooker, Kessel-Lo BE
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20090302389 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE WITH DIFFERENT METALLIC GATES - A method is described for forming gate structures with different metals on a single substrate. A thin semiconductor layer ( | 12-10-2009 |
Jacob C. Hooker, Hamburg DE
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20100044798 | TRANSISTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME - A transistor device is provided that includes a substrate, a first channel region formed in a first portion of the substrate and being doped with a dopant of a first type of conductivity, a second channel region formed in a second portion of the substrate and being doped with a dopant of a second type of conductivity, a gate insulating layer formed on the first channel region and on the second channel region, a dielectric capping layer formed on the gate insulating layer, a first gate region formed on the dielectric capping layer over the first channel region, and a second gate region formed on the dielectric capping layer over the second channel region, wherein the first gate region and the second gate region are made of the same material, and wherein one of the first gate region and the second gate region comprises an ion implantation. | 02-25-2010 |
20110049634 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device having gate electrodes of a suitable work function material is disclosed. The method comprises providing a substrate ( | 03-03-2011 |
20140035062 | TRANSISTOR DEVICE AND A METHOD OF MANUFACTURING SAME - A transistor device is provided that includes a substrate, a first channel region formed in a first portion of the substrate and being doped with a dopant of a first type of conductivity, a second channel region formed in a second portion of the substrate and being doped with a dopant of a second type of conductivity, a gate insulating layer formed on the first channel region and on the second channel region, a dielectric capping layer formed on the gate insulating layer, a first gate region formed on the dielectric capping layer over the first channel region, and a second gate region formed on the dielectric capping layer over the second channel region, wherein the first gate region and the second gate region are made of the same material, and wherein one of the first gate region and the second gate region comprises an ion implantation. | 02-06-2014 |
Jacob C. Hooker, Kessel-Lo BE
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20080211032 | Semiconduct Device and Method of Manufacturing Such a Semiconductor Device - The invention relates to a CMOS device ( | 09-04-2008 |
20090267157 | METHOD OR MANUFACTURING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE OBTAINED BY USING SUCH A METHOD - The invention relates to a method of manufacturing a semiconductor device ( | 10-29-2009 |
20100176454 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE - A method is provided of manufacturing a semiconductor device comprising a first, n-type field effect transistor ( | 07-15-2010 |
Jacob Christopher Hooker, Hamburg DE
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20110095376 | SINGLE METAL DUAL DIELECTRIC CMOS DEVICE - The present disclosure provides a semiconductor device that includes a semiconductor substrate having a first region and a second region, a pMOS transistor formed over the first region and an nMOS formed over the second region. The pMOS transistor has a gate structure that includes: an interfacial layer formed over the substrate; a AlO | 04-28-2011 |
James Hooker, Scotland GB
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20110248630 | SHORT ARC DIMMABLE HID LAMP WITH CONSTANT COLOUR DURING DIMMING - The present disclosure relates to a short arc metal halide lamp without outer jacket, whose arc tube has a specified aspect ratio and chemical filling, characterised in that it delivers a low colour temperature and very high colour rendering index, which are maintained during dimming. | 10-13-2011 |
James Hooker, Aarschot BE
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20150028736 | MOUNTING SYSTEM FOR SEALING AND ALIGNING THE BURNER OF THE LAMP AT THE CENTRE OF ITS BASE - A lamp having a longitudinal axis, comprising of a burner pinched at one end and a cement less base holding the contact points protruding from the burner. At least one end of the burner is sealed and aligned at the centre of the base in an upright direction following the lamp axis by means of a spring clip, which is mounted from the side of the pinch of the burner and does not interfere with the lead wires. | 01-29-2015 |
James D. Hooker, Aarschot BE
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20090184643 | ELECTRODE UNIT IN HIGH PRESSURE DISCHARGE LAMP - A combined cermet rod and electrode unit for use in a high pressure discharge lamp comprising a cermet rod for connection at its distal end to an electrode tip of the high pressure discharge lamp, and a current supply electrode for forming an electrical connection with the cermet rod. The current supply electrode is formed with a hollow tubular section which is positioned around a proximal end of the cermet rod in physical and electrical contact therewith. | 07-23-2009 |
Simon Hooker, Oxford GB
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20150086148 | HIGH HARMONIC OPTICAL GENERATOR - A high harmonic optical generator comprising a laser arrangement for emitting a beam of polarized radiation at a fundamental frequency and an optical waveguide having a hollow core for a gaseous harmonic generation medium for the generation of high harmonics of the fundamental frequency, the optical waveguide having an optical propagation axis along the hollow core, the laser arrangement is configured to couple the beam of polarized radiation along the propagation axis of the hollow core optical waveguide to provide a beam of optical driving radiation for the high harmonic generation, the optical driving radiation having a plane of polarization that rotates about the propagation axis. | 03-26-2015 |
Simon Martin Hooker, Oxford GB
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20110199000 | CHARGED PARTICLE ACCELERATOR AND RADIATION SOURCE - A method of accelerating charged particles using a laser pulse fired through a plasma channel contained in a capillary, wherein the plasma waveguide has deviations along its length that cause deviations in the plasma density contained therein, the deviations in plasma density acting to promote charged particle injection into a wake of a passing laser pulse. A radiation source based on a laser-driven plasma accelerator in a plasma waveguide in which the plasma waveguide and/or laser injection process is/are controlled so as to produce an undulating path for the laser pulse through the waveguide, the undulation exerting a periodic transverse force on charged particles being accelerated in the wake of the laser pulse, the resulting charged particle motion causing controlled emission of high frequency radiation pulses. | 08-18-2011 |