Patent application number | Description | Published |
20110320846 | ADAPTIVE MEMORY FREQUENCY SCALING - Methods and apparatuses for adaptive memory operational state management. A memory performance parameter is determined for at least a portion of a memory system. The memory performance parameter is compared to one or more threshold values. An operating frequency of the memory system can be modified based on results of the comparison of the memory performance parameter and the one or more threshold values. | 12-29-2011 |
20120030396 | Decoupled Memory Modules: Building High-Bandwidth Memory Systems from Low-Speed Dynamic Random Access Memory Devices - Apparatus and methods related to exemplary memory system are disclosed. The exemplary memory systems use a synchronization device to increase channel bus data rates while using relatively-slower memory devices operating at device bus data rates that differ from channel bus data rates. | 02-02-2012 |
20130097403 | Address Mapping in Memory Systems - A memory system includes an address mapping circuit. The address mapping circuit receives an input memory address having a first set of address bits. The address mapping circuit applies a logic function to the input memory address to generate a mapped memory address. The logic function uses at least a subset of the first set of address bits in two separate operations that respectively determine two portions of the mapped memory address. | 04-18-2013 |
20130111132 | Cache Memory That Supports Tagless Addressing | 05-02-2013 |
20130332668 | METHODS AND APPARATUSES FOR ADDRESSING MEMORY CACHES - A cache memory includes cache lines to store information. The stored information is associated with physical addresses that include first, second, and third distinct portions. The cache lines are indexed by the second portions of respective physical addresses associated with the stored information. The cache memory also includes one or more tables, each of which includes respective table entries that are indexed by the first portions of the respective physical addresses. The respective table entries in each of the one or more tables are to store indications of the second portions of respective physical addresses associated with the stored information. | 12-12-2013 |
20140047155 | MEMORY MODULE THREADING WITH STAGGERED DATA TRANSFERS - A method of transferring data between a memory controller and at least one memory module via a primary data bus having a primary data bus width is disclosed. The method includes accessing a first one of a memory device group via a corresponding data bus path in response to a threaded memory request from the memory controller. The accessing results in data groups collectively forming a first data thread transferred across a corresponding secondary data bus path. Transfer of the first data thread across the primary data bus width is carried out over a first time interval, while using less than the primary data transfer continuous throughput during that first time interval. During the first time interval, at least one data group from a second data thread is transferred on the primary data bus. | 02-13-2014 |
20140068172 | SELECTIVE REFRESH WITH SOFTWARE COMPONENTS - A method of refreshing a memory is disclosed. The method includes accessing from active memory an active memory map. The active memory map is generated by software and identifies addresses corresponding to the active memory and associated refresh criteria for the addresses. The refresh criteria are evaluated for a portion of the active memory, and an operation initiated to refresh a portion of the active memory is based on the refresh criteria. | 03-06-2014 |
20140115296 | Remapping Memory Cells Based on Future Endurance Measurements - A method of operating a memory device that includes groups of memory cells is presented. The groups include a first group of memory cells. Each one of the groups has a respective physical address and is initially associated with a respective logical address. The device also includes an additional group of memory cells that has a physical address but is not initially associated with a logical address. In the method, a difference in the future endurance between the first group of memory cells and the additional group of memory cells is identified. When the difference in the future endurance between the first group and the additional group exceeds a predetermined threshold difference, the association between the first group and the logical address initially associated with the first group is ended and the additional group is associated with the logical address that was initially associated with the first group. | 04-24-2014 |
20140164823 | Memory Disturbance Recovery Mechanism - Components of a memory system, such as a memory controller and memory device, which detect accumulated memory read disturbances and correct such disturbances before they reach a level that causes errors. The memory device includes a memory array and a disturbance control circuit. The memory array includes a plurality of memory rows. Each memory row is associated with a disturbance warning circuit having a state that corresponds to an accumulated disturbance in the memory row. The disturbance control circuit determines, responsive to an activation of a memory row of the plurality of memory rows specified by a row access command, whether the disturbance condition is present in the memory row based on the state of the disturbance warning circuit associated with the memory row. If a disturbance condition is present, the disturbance control circuit causes a recovery operation to be performed on the memory row to reduce the accumulated disturbances. | 06-12-2014 |