Patent application number | Description | Published |
20160064770 | COMPOSITE ELECTROLYTE AND LITHIUM BATTERY INCLUDING THE SAME - A composite electrolyte including a polymeric ionic liquid; a plurality of inorganic particles; and an organic electrolyte. | 03-03-2016 |
20160064772 | ELECTROLYTE MEMBRANE FOR ENERGY STORAGE DEVICE, ENERGY STORAGE DEVICE INCLUDING THE SAME, AND METHOD OF PREPARING THE ELECTROLYTE MEMBRANE FOR ENERGY STORAGE DEVICE - An electrolyte membrane for an energy storage device, an energy storage device including: a matrix including an ionically conductive polymer composition including a polymer and a lithium salt; and a metal-organic framework in the matrix, wherein the metal-organic frame work is in the form of a plurality of primary particles, each having diameter distribution represented by Inequation 1: | 03-03-2016 |
20160064773 | COMPOSITE, METHOD OF PREPARING THE COMPOSITE, ELECTROLYTE COMPRISING THE COMPOSITE, AND LITHIUM SECONDARY BATTERY COMPRISING THE ELECTROLYTE - A composite including a metal-organic framework; and an ionic liquid disposed in a pore defined by the metal-organic framework. Also a method of preparing the composite, an electrolyte including the composite, and a lithium secondary battery including the electrolyte. | 03-03-2016 |
20160072148 | ORGANIC-INORGANIC SILICON STRUCTURE-CONTAINING BLOCK COPOLYMER, ELECTROLYTE INCLUDING THE SAME, AND LITHIUM BATTERY INCLUDING THE ELECTROLYTE - An organic-inorganic silicon structure-containing block copolymer including a first domain including an ion conductive polymer block; and a second domain including a polymer block including a non-conducting polymer and an organic-inorganic silicon structure, wherein the organic-inorganic silicon structure is connected to a side chain connected to a backbone of the non-conducting polymer. | 03-10-2016 |
20160087306 | ELECTROLYTE, METHOD OF PREPARING THE ELECTROLYTE, AND LITHIUM SECONDARY BATTERY COMPRISING THE ELECTROLYTE - An electrolyte including a copolymer including (i) an ion-conductive domain including an ion-conductive segment of the copolymer, wherein the ion-conductive segment includes a plurality of ion-conductive units, and (ii) a structural domain including a structural segment of the copolymer, wherein the structural segment includes a plurality of structural units, wherein the ion-conductive domain and the structural domain are covalently linked, and a polymer network phase coupled to the ion-conductive domain. | 03-24-2016 |
Patent application number | Description | Published |
20140187029 | VERTICAL TYPE MEMORY DEVICE - A method of fabricating a semiconductor device, comprising: forming a plurality of memory cell strings; coupling an interconnection to at least two of the memory cell strings; and coupling a bitline to the interconnection. The interconnection includes a body extending along a first direction and a protrusion protruding from the body along a second direction. | 07-03-2014 |
20140197542 | SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING SEMICONDUCTOR DEVICES - Semiconductor devices are provided. A semiconductor device may include a substrate and a plurality of lines on the substrate. The semiconductor device may include a dielectric layer on the substrate and adjacent the plurality of lines. The semiconductor device may include a connection element in the dielectric layer. In some embodiments, the semiconductor device may include a plurality of contacts on the connection element, and a conductive interconnection on one of the plurality of contacts that are on the connection element and on a contact that is spaced apart from the connection element. | 07-17-2014 |
20150035065 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor device includes a substrate with an active region defined by a device isolation layer. A word line extends over the active region in a first direction, and a plurality of interconnections extends over the word line in a second direction perpendicular to the first direction. A contact pad is disposed between and spaced apart from the word line and the plurality of interconnections, extending in the first direction to overlap the plurality of interconnections and the active region when viewed from a plan view. A lower contact plug electrically connects the contact pad to the active region. An upper contact plug electrically connects the contact pad to one of the plurality of interconnections. | 02-05-2015 |
20150261905 | METHODS OF PREPARING LAYOUTS FOR SEMICONDUCTOR DEVICES, PHOTOMASKS FORMED USING THE LAYOUTS, AND SEMICONDUCTOR DEVICES FABRICATED USING THE PHOTOMASKS - Methods of preparing layouts for semiconductor devices and semiconductor devices fabricated using the layouts are provided. Preparing the layouts for semiconductor devices may include disposing assistant patterns near a main gate pattern that is provided on a weak active pattern. The weak active pattern may be, for example, an outermost one of active patterns and may be one expected to have an increased width during a fabrication process. | 09-17-2015 |
20160049422 | SEMICONDUCTOR DEVICE - A semiconductor device may include an insulating layer provided in one body on a substrate, a first gate electrode and a second gate electrode disposed on the insulating layer, the first and second gate electrodes extending in a first direction parallel to a top surface of the substrate, a first channel structure penetrating the first gate electrode and the insulating layer so as to be connected to the substrate, a second channel structure penetrating the second gate electrode and the insulating layer so as to be connected to the substrate, and a contact penetrating the insulating layer between the first gate electrode and the second gate electrode. The contact may be connected to a common source region formed in the substrate, and the common source region may have a first conductivity type. Further, the first gate electrode and the second gate electrode may be spaced apart from each other in a second direction at the same level from the substrate, wherein the second direction intersects the first direction and is parallel to the top surface of the substrate. | 02-18-2016 |