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Hongmei Li

Hongmei Li, Warren, NJ US

Patent application numberDescriptionPublished
20080200530Diaryl and Arylheteroaryl Urea Derivatives as Modulators of 5-Ht2a Serotonin Receptor Useful for the Prophylaxis or Treatment of Progressive Multifocal Leukoencephalopathy - The present invention relates to certain pyrazole derivatives of Formula (I) and pharmaceutical compositions thereof that modulate the activity of the 5-HT2A serotonin receptor. Compounds and pharmaceutical compositions thereof are directed to methods useful in the prophylaxis or treatment of progressive multifocal leukoencephalopathy.08-21-2008
20100087425Substituted N-Arylsulfonylheterocyclic Amines As Gamma-Secretase Inhibitors - This invention discloses novel gamma secretase inhibitors of the formula:04-08-2010
20100093695Substituted N-Arylsulfonylheterocyclic Amines As Gamma-Secretase Inhibitors - This invention discloses novel gamma secretase inhibitors of the formula:04-15-2010
20100247514GAMMA SECRETASE MODULATORS - In its many embodiments, the present invention provides a novel class of heterocyclic compounds as modulators of gamma secretase, methods of preparing such compounds, pharmaceutical compositions containing one or more such compounds, methods of preparing pharmaceutical formulations comprising one or more such compounds, and methods of treatment, prevention, inhibition, or amelioration of one or more diseases associated with the central nervous system using such compounds or pharmaceutical compositions.09-30-2010
20110027264GAMMA SECRETASE MODULATORS FOR THE TREATMENT OF ALZHEIMER'S DISEASE - This invention provides novel compounds that are modulators of gamma secretase. The compounds have the formula: Also disclosed are methods of modulating gamma secretase activity and methods of treating Alzheimer's disease using the compounds of formula (I).02-03-2011
20110110948BENZENESULFONYL-CHROMANE, THIOCHROMANE, TETRAHYDRONAPHTHALENE AND RELATED GAMMA SECRETASE INHIBITORS - Disclosed are novel gamma secretase inhibitors of the formula (I): or a pharmaceutically acceptable salt, solvate, or ester thereof, wherein L05-12-2011

Patent applications by Hongmei Li, Warren, NJ US

Hongmei Li, Williston, VT US

Patent application numberDescriptionPublished
20080237721STRUCTURE AND CIRCUIT TECHNIQUE FOR UNIFORM TRIGGERING OF MULTIFINGER SEMICONDUCTOR DEVICES WITH TUNABLE TRIGGER VOLTAGE - An external current injection source is provided to individual fingers of a multi-finger semiconductor device to provide the same trigger voltage across the multiple fingers. For example, the external injection current is supplied to the body of a MOSFET or the gate of a thyristor. The magnitude of the supplied current from each external current injection source is adjusted so that each finger has the same trigger voltage. The external current supply circuit may comprise diodes or an RC triggered MOSFET. The components of the external current supply circuit may be tuned to achieve a desired predetermined trigger voltage across all fingers of the multi-finger semiconductor device.10-02-2008
20090108289DESIGN STRUCTURE FOR UNIFORM TRIGGERING OF MULTIFINGER SEMICONDUCTOR DEVICES WITH TUNABLE TRIGGER VOLTAGE - A design structure for a circuit providing the same trigger voltage across the multiple fingers is provided, which comprises a data representing an external current injection source connected to individual fingers of a multi-finger semiconductor device. For example, the external injection current is supplied to the body of a MOSFET or the gate of a thyristor. The magnitude of the supplied current from each external current injection source is adjusted so that each finger has the same trigger voltage. The external current supply circuit may comprise diodes or an RC triggered MOSFET. The components of the external current supply circuit may be tuned to achieve a desired predetermined trigger voltage across all fingers of the multi-finger semiconductor device.04-30-2009
20090224772SYSTEM AND METHOD FOR DE-EMBEDDING A DEVICE UNDER TEST EMPLOYING A PARAMETRIZED NETLIST - S-parameter data is measured on an embedded device test structure, an open dummy, and a short dummy. A 4-port network of the pad set parasitics of the embedded device test structure is modeled by a parameterized netlist containing a lumped element network having at least one parameterized lumped element. The S-parameter data across a range of measurement frequencies is fitted with the parametrized netlist employing the at least one parameterized lumped element as at least one fitting parameter for the S-parameter data. Thus, the fitting method is a multi-frequency fitting for the at least one parameterized lumped element. A 4-port Y-parameter (admittance parameter) is obtained from the fitted parameterized netlist. The Y-parameter of the device under test is obtained from the measured admittance of the embedded device test structure and the calculated 4-port Y parameter.09-10-2009