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Hongmei
Hongmei Luo, Los Alamos, NM US
| Patent application number | Description | Published |
|---|---|---|
| 20090162673 | Cubic nitride templates - A polymer-assisted deposition process for deposition of epitaxial cubic metal nitride films and the like is presented. The process includes solutions of one or more metal precursor and soluble polymers having binding properties for the one or more metal precursor. After a coating operation, the resultant coating is heated at high temperatures under a suitable atmosphere to yield metal nitride films and the like. Such films can be used as templates for the development of high quality cubic GaN based electronic devices. | 06-25-2009 |
| 20110034600 | POLYMER-ASSISTED DEPOSITION OF FILMS AND PREPARATION OF CARBON NANOTUBE ARRAYS USING THE FILMS - Carbon nanotubes were prepared by coating a substrate with a coating solution including a suitable solvent, a soluble polymer, a metal precursor having a first metal selected from iron, nickel, cobalt, and molybdenum, and optionally a second metal selected from aluminum and magnesium, and also a binding agent that forms a complex with the first metal and a complex with the second metal. The coated substrate was exposed to a reducing atmosphere at elevated temperature, and then to a hydrocarbon in the reducing atmosphere. The result was decomposition of the polymer and formation of carbon nanotubes on the substrate. The carbon nanotubes were often in the form of an array on the substrate. | 02-10-2011 |
Hongmei Wang, Boise, ID US
| Patent application number | Description | Published |
|---|---|---|
| 20090176338 | FULLY-DEPLETED (FD)(SOI) MOSFET ACCESS TRANSISTOR AND METHOD OF FABRICATION - A fully-depleted (FD) Silicon-on-Insulator (SOI) MOSFET access transistor comprising a gate electrode of a conductivity type which is opposite the conductivity type of the source/drain regions and a method of fabrication are disclosed. | 07-09-2009 |
| 20100297822 | Methods of forming capacitor structures, methods of forming threshold voltage implant regions, and methods of implanting dopant into channel regions - The invention includes methods of forming channel region implants for two transistor devices simultaneously, in which a mask is utilized to block a larger percentage of a channel region location of one of the devices relative to the other. The invention also pertains to methods of forming capacitor structures in which a first capacitor electrode is spaced from a semiconductor substrate by a dielectric material, a second capacitor electrode comprises a conductively-doped diffusion region within the semiconductor material, and a capacitor channel region location is beneath the dielectric material and adjacent the conductively-doped diffusion region. An implant mask is formed to cover only a first portion of the capacitor channel region location and to leave a second portion of the capacitor channel region location uncovered. While the implant mask is in place, dopant is implanted into the uncovered second portion of the capacitor channel region location. | 11-25-2010 |
Hongmei Wang, Shanghai CN
| Patent application number | Description | Published |
|---|---|---|
| 20100057287 | METHOD AND APPARATUS FOR CONTROLLING AN ACTUATABLE SAFETY DEVICE - A method for determining a crash condition of a vehicle comprises the step of sensing crash acceleration in a first direction substantially parallel to a front-to-rear axis of the vehicle and providing a first acceleration signal indicative thereof. The method also comprises the step of sensing crash acceleration in a second direction substantially parallel to a side-to-side axis of the vehicle and near opposite sides of the vehicle and providing second acceleration signals indicative thereof. The method further comprises the steps of determining a transverse crash value functionally related to the second acceleration signals and comparing the determined transverse crash value against a safing threshold. The method still further comprises the step of determining a crash condition of the vehicle in response to (a) the comparison and (b) the first acceleration signal. | 03-04-2010 |
Hongmei Yu, San Mateo, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20090155840 | METHOD AND DEVICE FOR CELL COUNTING - A microfluidic device and method is provided for determining a cell concentration in a sample. The microfluidic device includes a body having a channel therethough that extends along an axis. The channel includes an input and an output, and is at least partially defined by a surface. Indicia overlaps the surface. The channel has a predetermined volume. A portion of the sample is provided in the channel and the cells in the predetermined portions of the channel defined by the indicia are counted. | 06-18-2009 |
Hongmei Yu, Liaoning CN
| Patent application number | Description | Published |
|---|---|---|
| 20090004514 | Method of Selecting Non-Humidification Operation Condition of Proton Exchange Membrane Fuel Cell - The invention relates to fuel cell non-humidification operation, specifically to—a method on dry operation condition selection, wherein under condition of inputting dry gas, applying predetermined temperature, pressure and the input flow of the dry gas and detecting the temporary current-voltage curve of the cell. The selection method of this invention can realize steady operation of the cell under non-humidification condition and avoid the dehydration problem of the membrane under the dry gas as well as the “flood” phenomena. The present invention can be applied to not only normal temperature work condition, but also the start and run of the fuel cell under zero degree temperature condition especially. It can simplify the system of the fuel cell and therefore improve the development of the fuel cell. | 01-01-2009 |