| Patent application number | Description | Published |
|---|
| 20080318032 | METHOD FOR SELECTIVELY FORMING SYMMETRICAL OR ASYMMETRICAL FEATURES USING A SYMMETRICAL PHOTOMASK DURING FABRICATION OF A SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEMS INCLUDING THE SEMICONDUCTOR DEVICE - A method for patterning a material during fabrication of a semiconductor device provides for the selective formation of either asymmetrical features or symmetrical features using a symmetrical photomask, depending on which process flow is chosen. The resulting features which are fabricated use spacers formed around a patterned material. If one particular etch is used to remove a base material, symmetrical features result. If two particular etches are used to remove the base material, asymmetrical features remain. | 12-25-2008 |
| 20090090958 | Semiconductor Constructions - Some embodiments include methods of forming a NAND cell unit having a NAND string gate closest to a select gate with a different width than other NAND string gates more distant from the select gate. Some embodiments include utilization of an etch comprising HBr and O | 04-09-2009 |
| 20090239382 | METHOD FOR SELECTIVELY MODIFYING SPACING BETWEEN PITCH MULTIPLIED STRUCTURES - Methods for circuit material processing are provided. In at least one such method, a substrate is provided with a plurality of overlying spacers. The spacers have substantially straight inner sidewalls and curved outer sidewalls. An augmentation material is formed on the plurality of spacers such that the inner or the outer sidewalls of the spacers are selectively expanded. The augmentation material can bridge the upper portions of pairs of neighboring inner sidewalls to limit deposition between the inner sidewalls. The augmentation material is selectively etched to form a pattern of augmented spacers having a desired augmentation of the inner or outer sidewalls. The pattern of augmented spacers can then be transferred to the substrate through a series of selective etches such that features formed in the substrate achieve a desired pitch. | 09-24-2009 |
| 20100055913 | Methods Of Forming A Photoresist-Comprising Pattern On A Substrate - A method of forming a photoresist-comprising pattern on a substrate includes forming a patterned first photoresist having spaced first masking shields in at least one cross section over a substrate. The first masking shields are exposed to a fluorine-containing plasma effective to form a hydrogen and fluorine-containing organic polymer coating about outermost surfaces of the first masking shields. A second photoresist is deposited over and in direct physical touching contact with the hydrogen and fluorine-containing organic polymer coating. The second photoresist which is in direct physical touching contact with the hydrogen and fluorine-containing organic polymer coating is exposed to a pattern of actinic energy and thereafter spaced second masking shields are formed in the one cross section which comprise the second photoresist and correspond to the actinic energy pattern. The first and second masking shields together form at least a part of a photoresist-comprising pattern on the substrate. Other embodiments are disclosed. | 03-04-2010 |
| 20100323523 | Methods Of Plasma Etching Platinum-Comprising Materials, Methods Of Processing Semiconductor Substrates In The Fabrication Of Integrated Circuitry, And Methods Of Forming A Plurality Of Memory Cells - A platinum-comprising material is plasma etched by being exposed to a plasma etching chemistry that includes CHCl | 12-23-2010 |
| 20110183269 | Methods Of Forming Patterns, And Methods For Trimming Photoresist Features - Some embodiments include methods of forming patterns. Photoresist features may be formed over a base, with the individual photoresist features having heights and widths. The photoresist features may be exposed to a combination of chloroform, oxidant and additional carbon-containing material besides chloroform to reduce the widths of the photoresist features while substantially maintaining the heights of the photoresist features. The photoresist features may then be used as a mask to pattern the underlying base, and/or spacers may be formed to be aligned to sidewalls of the photoresist features, and the spacers may be used as the mask to pattern the underlying base. | 07-28-2011 |
| 20110248385 | METHOD FOR SELECTIVELY FORMING SYMMETRICAL OR ASYMMETRICAL FEATURES USING A SYMMETRICAL PHOTOMASK DURING FABRICATION OF A SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEMS INCLUDING THE SEMICONDUCTOR DEVICE - A method for patterning a material during fabrication of a semiconductor device provides for the selective formation of either asymmetrical features or symmetrical features using a symmetrical photomask, depending on which process flow is chosen. The resulting features which are fabricated use spacers formed around a patterned material. If one particular etch is used to remove a base material, symmetrical features result. If two particular etches are used to remove the base material, asymmetrical features remain. | 10-13-2011 |
| 20110312171 | Methods Of Forming Integrated Circuitry Comprising Charge Storage Transistors - Methods include forming a charge storage transistor gate stack over semiconductive material. One such stack includes a tunnel dielectric, charge storage material over the tunnel dielectric, a high-k dielectric over the charge storage material, and conductive control gate material over the high-k dielectric. The stack is etched at least to the tunnel dielectric to form a plurality of charge storage transistor gate lines over the semiconductive material. Individual of the gate lines have laterally projecting feet which include the high-k dielectric. After etching the stack to form the gate lines, ions are implanted into an implant region which includes the high-k dielectric of the laterally projecting feet. The ions are chemically inert to the high-k dielectric. The ion implanted high-k dielectric of the projecting feet is etched selectively relative to portions of the high-k dielectric outside of the implant region. | 12-22-2011 |
