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Hongbin
Hongbin Fang, San Jose, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20090029544 | ADHESION AND MINIMIZING OXIDATION ON ELECTROLESS CO ALLOY FILMS FOR INTEGRATION WITH LOW K INTER-METAL DIELECTRIC AND ETCH STOP - A method and apparatus for processing a semiconductor substrate including depositing a capping layer upon a conductive material formed on the substrate, reducing oxide formation on the capping layer, and then depositing a dielectric material. A method and apparatus for processing a semiconductor substrate including depositing a capping layer upon a conductive material formed on a substrate, exposing the capping layer to a plasma, heating the substrate to more than about 100° C., and depositing a low dielectric constant material. | 01-29-2009 |
Hongbin Ma, Columbia, MO US
| Patent application number | Description | Published |
|---|---|---|
| 20100212331 | CRYOPRESERVATION METHOD AND DEVICE - A device and method suitable for the cryopreservation of all types of biological cells is described. In this method, an ultra-fast cooling/warming device system is used to achieve vitrification of individual cells or cell suspensions without cryoprotectant agents (CPA) or with a low concentration of CPAs (<1M), to attenuate the formation of intracellular ice crystal formation during cooling, and to minimize devitrification during subsequent warming. The device system applies oscillating heat pipe (OHP) and nanofluid techniques, and is built through microfabrication. Several devices may be networked to increase the total volume of cell samples that the cryopreservation system can process simultaneously. | 08-26-2010 |
| 20110079022 | HYBRID THERMOELECTRIC-EJECTOR COOLING SYSTEM - A hybrid thermoelectric-ejector active cooling system having an increased Coefficient of Performance (COP) when compared to typical thermoelectric cooling modules. A thermoelectric cooling module is integrated with an ejector cooling device so that heat from the thermoelectric cooling module is rejected to a high temperature evaporator of the ejector cooling device. This provides for a total COP greater than the sum of the COPs of the thermoelectric cooling module and ejector cooling device individually. For example, given 1 unit input power into the thermoelectric cooling module, the heat received by the cold side of the thermoelectric cooling module would be COP | 04-07-2011 |
Hongbin Shen, Diamond Bar, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20110039060 | COMPOSITE PANEL HAVING IN-SITU THERMOSET FOAMED CORE - A method for making a composite panel, wherein the composite panel has a honeycomb core sandwiched between a pair of facing sheets, includes the steps of (a) coating the interior walls of the cells with a unexpanded thermo-expandable material; (b) bonding a pair of facing sheets to the opposite sides of the honeycomb core; and (c) heating the honeycomb core while the honeycomb core is sandwiched between the pair of facing sheets with sufficient heat to cause the thermo-expandable material to expand and to substantially fill the cells. | 02-17-2011 |
Hongbin Sun, Hayward, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20080287441 | ALPHA-(TRIFLUOROMETHYL-SUBSTITUTED ARYLOXY, ARYLAMINO, ARYLTHIO OR ARYLMETHYL)-TRIFLUOROMETHYL-SUBSTITUTED PHENYLACETIC ACIDS AND DERIVATIVES AS ANTIDIABETIC AGENTS - Compounds having a formula: | 11-20-2008 |
Hongbin Wu, Shenzhen CN
| Patent application number | Description | Published |
|---|---|---|
| 20080268707 | Connector Plug - The present invention relates to a high density connector plug, comprising the body of plug and a plastic enclosure for fixing said body of plug and being connected with the cable. Said body of plug comprises a shielding shell, an insulator mounted in said shielding shell, and a set of contacts provided on the side of said insulator; said insulator comprising a base and upper plastic body and lower plastic body extending outwards from one side of said base, which have slots for mounting said contacts. Thus the interface footprint of plug and socket is reduced and the pin density is increased, thereby the volume of the corresponding device is significantly reduced, so that the devices have a trend towards miniature and high density. In addition, there is a stepped welding area provided on the insulator, so that the contacts can be connected to the cable by welding, and there is visibility in the cable welding, thereby the working efficiency is improved. | 10-30-2008 |
Hongbin Xu, Taipei Taiwan CN
| Patent application number | Description | Published |
|---|---|---|
| 20090045656 | Single-Hand Height Adjustment Mechanism Of Highchair - A Single-hand height adjustment mechanism of a highchair includes an operating unit handled with a single hand, and a locking unit connected with the operating unit. The operating unit uses simple movement, such as handle pressing or button pulling, to pull adjustment wires. The adjustment wires then activate or release the locking unit. Therefore, the seat can be adjusted to higher or lower positions with the use of a single hand. | 02-19-2009 |
Hongbin Zhang, Xiamen CN
| Patent application number | Description | Published |
|---|---|---|
| 20100041548 | PROCESS FOR THE MANUFACTURE OF METHYLMERCAPTAN - The present invention refers to a continuous process for the manufacture of methyl mercaptan using Mo—O—K-based catalysts. It is further described that the total selectivity of methylmercaptan can be increased by at least 1% by lowering the total gas hourly space velocity. The invention further refers to a process for the preparation of a solid, preformed catalyst system. | 02-18-2010 |
Hongbin Zhu, Boise, ID US
| Patent application number | Description | Published |
|---|---|---|
| 20080318032 | METHOD FOR SELECTIVELY FORMING SYMMETRICAL OR ASYMMETRICAL FEATURES USING A SYMMETRICAL PHOTOMASK DURING FABRICATION OF A SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEMS INCLUDING THE SEMICONDUCTOR DEVICE - A method for patterning a material during fabrication of a semiconductor device provides for the selective formation of either asymmetrical features or symmetrical features using a symmetrical photomask, depending on which process flow is chosen. The resulting features which are fabricated use spacers formed around a patterned material. If one particular etch is used to remove a base material, symmetrical features result. If two particular etches are used to remove the base material, asymmetrical features remain. | 12-25-2008 |
| 20090090958 | Semiconductor Constructions - Some embodiments include methods of forming a NAND cell unit having a NAND string gate closest to a select gate with a different width than other NAND string gates more distant from the select gate. Some embodiments include utilization of an etch comprising HBr and O | 04-09-2009 |
| 20090239382 | METHOD FOR SELECTIVELY MODIFYING SPACING BETWEEN PITCH MULTIPLIED STRUCTURES - Methods for circuit material processing are provided. In at least one such method, a substrate is provided with a plurality of overlying spacers. The spacers have substantially straight inner sidewalls and curved outer sidewalls. An augmentation material is formed on the plurality of spacers such that the inner or the outer sidewalls of the spacers are selectively expanded. The augmentation material can bridge the upper portions of pairs of neighboring inner sidewalls to limit deposition between the inner sidewalls. The augmentation material is selectively etched to form a pattern of augmented spacers having a desired augmentation of the inner or outer sidewalls. The pattern of augmented spacers can then be transferred to the substrate through a series of selective etches such that features formed in the substrate achieve a desired pitch. | 09-24-2009 |
| 20100055913 | Methods Of Forming A Photoresist-Comprising Pattern On A Substrate - A method of forming a photoresist-comprising pattern on a substrate includes forming a patterned first photoresist having spaced first masking shields in at least one cross section over a substrate. The first masking shields are exposed to a fluorine-containing plasma effective to form a hydrogen and fluorine-containing organic polymer coating about outermost surfaces of the first masking shields. A second photoresist is deposited over and in direct physical touching contact with the hydrogen and fluorine-containing organic polymer coating. The second photoresist which is in direct physical touching contact with the hydrogen and fluorine-containing organic polymer coating is exposed to a pattern of actinic energy and thereafter spaced second masking shields are formed in the one cross section which comprise the second photoresist and correspond to the actinic energy pattern. The first and second masking shields together form at least a part of a photoresist-comprising pattern on the substrate. Other embodiments are disclosed. | 03-04-2010 |
| 20100323523 | Methods Of Plasma Etching Platinum-Comprising Materials, Methods Of Processing Semiconductor Substrates In The Fabrication Of Integrated Circuitry, And Methods Of Forming A Plurality Of Memory Cells - A platinum-comprising material is plasma etched by being exposed to a plasma etching chemistry that includes CHCl | 12-23-2010 |