| Patent application number | Description | Published |
|---|
| 20100032664 | THIN FILM TRANSISTOR SUBSTRATE AND A FABRICATING METHOD THEREOF - An oxide semiconductor thin film transistor substrate includes a gate line and a gate electrode disposed on an insulating substrate, an oxide semiconductor pattern disposed adjacent to the gate electrode, a data line electrically insulated from the gate line, the data line and the gate line defining a display region, a first opening exposing a surface of the data line, a second opening exposing a surface of the oxide semiconductor pattern, and a drain electrode disposed on the first opening and a drain electrode pad, the drain electrode extending from the first opening to the second opening and electrically connecting the drain electrode pad and the oxide semiconductor pattern. | 02-11-2010 |
| 20100051951 | THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD OF THE SAME - A thin film transistor (“TFT”) array panel includes; an insulation substrate, a TFT disposed on the insulation substrate and including a drain electrode, a passivation layer covering the TFT and including a contact portion disposed therein corresponding to the drain electrode, a partition comprising an organic material disposed on the passivation layer, and including a transverse portion, a longitudinal portion, and a contact portion disposed on the drain electrode, a color filter disposed on the passivation layer and disposed in a region defined by the partition, an organic capping layer disposed on the partition and the color filter, and a pixel electrode disposed on the organic capping layer, and connected to the drain electrode through the contact portion of the passivation layer and the contact portion of the partition, wherein a contact hole is formed in the organic capping layer corresponding to the contact portion of the passivation layer. | 03-04-2010 |
| 20100140610 | THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME - A thin film transistor substrate according to an embodiment of the present invention includes: an insulation substrate; a gate line formed on the insulation substrate; a first interlayer insulating layer formed on the gate line; a data line and a gate electrode formed on the first interlayer insulating layer; a gate insulating layer formed on the data line and gate electrode; a semiconductor formed on the gate insulating layer and overlapping the gate electrode; a second interlayer insulating layer formed on the semiconductor; a first connection formed on the second interlayer insulating layer and electrically connecting the gate line and the gate electrode to each other; a drain electrode connected to the semiconductor; a pixel electrode connected to the drain electrode; and a second connection connecting the data line and the semiconductor to each other. | 06-10-2010 |
| 20100245698 | LIQUID CRYSTAL DISPLAY DEVICE - The present invention relates to a liquid crystal display. The liquid crystal display has a lower panel including a first pixel area having a first pixel electrode and a first light leakage preventing member, a final pixel area having a second pixel electrode and a second light leakage preventing member, and middle pixel areas disposed between the first pixel area and the final pixel area, each of the middle pixel areas including a first middle pixel electrode and a second middle pixel electrode. Accordingly, light leakage may be effectively prevented at the first pixel area and the final pixel area that are disposed on the edge. | 09-30-2010 |
| 20100261105 | Method of Exposing Substrate, Apparatus for Performing the Same, and Method of Manufacturing Display Substrate Using the Same - A photoresist layer exposed through first slits of a mask is exposed using first light. The photoresist layer exposed through second slits of the mask is exposed by using second light. The first light passes thorough a transflective shutter to generate the second light. | 10-14-2010 |
| 20100321617 | LIQUID CRYSTAL DISPLAY AND MANUFACTURING METHOD THEREOF - Exemplary embodiments of the present invention disclose a liquid crystal display (LCD) and a method of manufacturing the same. The LCD may have a display area and a peripheral area. An organic layer of the peripheral area may be patterned using a half-tone mask, and a protrusion member may be formed in the peripheral area. Accordingly, the thin film transistor array panel and the corresponding substrate may be prevented from being temporary adhered in the peripheral area such that the density of the liquid crystal molecules filled in the peripheral area may be uniformly maintained and the display quality of the liquid crystal display may be improved. | 12-23-2010 |
| 20110049519 | Thin Film Transistor Array Panel and Method of Manufacturing the Same - A thin film transistor array panel includes an insulation substrate. A signal line is formed on the insulation substrate. A thin film transistor is connected to the signal line. A color filter is formed on the substrate. An organic insulator is formed on the color filter and includes a first portion and a second portion having different thicknesses. A light blocking member is formed on the second portion of the organic insulator. A difference between the surface height of the first portion of the organic insulator and the surface height of the second portion of the organic insulator is in the range of about 2.0 μm to 3.0 μm. | 03-03-2011 |
| 20110100546 | METHOD OF FORMING A LIQUID CRYSTAL LAYER, METHOD OF MANUFACTURING A LIQUID CRYSTAL DISPLAY PANEL USING THE METHOD, AND LIQUID CRYSTAL MATERIAL USED IN THE METHOD - A liquid crystal layer is formed by coating a liquid crystal material having a reciprocal (Z | 05-05-2011 |
| 20110124152 | METHOD OF MANUFACTURING SEMICONDUCTOR FOR TRANSISTOR AND METHOD OF MANUFACTURING THE TRANSISTOR - A method of manufacturing a semiconductor for a transistor that includes forming a precursor layer by coating a surface of an insulation substrate with a precursor solution for an oxide semiconductor, forming an oxide semiconductor by oxidizing a portion of the precursor layer, and removing a remaining precursor layer except for the oxide semiconductor. | 05-26-2011 |
