| Patent application number | Description | Published |
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| 20090068545 | METHOD OF MANUFACTURING CELLULOSE ELECTRODE FOR FUEL CELLS, CELLULOSE ELECTRODE MANUFACTURED THEREBY, AND USE OF CELLULOSE FIBERS AS FUEL CELL ELECTRODES - Disclosed is a novel cellulose electrode having high performance, which is capable of substituting for carbon paper used as a conventional fuel cell electrode. A method of manufacturing the cellulose electrode includes cutting cellulose fibers to a predetermined length and binding the fibers, or directly weaving the fibers, thus producing a cellulose sheet, directly growing carbon nanotubes on the cellulose sheet, and supporting a platinum nano-catalyst on the surface of the carbon nanotubes using chemical vapor deposition. An electrode including the cellulose fibers and use of cellulose fibers as fuel cell electrodes are also provided. As a novel functional material for fuel cell electrodes, porous cellulose fibers having micropores are used, thereby reducing electrode manufacturing costs and improving electrode performance. | 03-12-2009 |
| 20090074633 | Microtubular honeycomb carbon material obtained by heat-treating cellulose fiber, production method of thereof, microtubular reactor module comprising the microtubular honeycomb carbon material and method for producing the microtubular reactor module - Disclosed herein are a microtubular honeycomb carbon material obtained by heat-treating cellulose fiber, a production method thereof, a microtubular reactor module fabricated using the microtubular honeycomb carbon, a method for producing the microtubular reactor module, and a microcatalytic reactor system comprising the microtubular reactor module. A carbon material having a new structure is produced by heat-treating cellulose fiber, and a catalytic reactor system having a new structure is constructed by coating the surface of the carbon material with a metal catalyst. Cellulose carbide, used as the reactor material, is very simple to produce. Because it has a micro honeycomb structure having a large number of microchannels and a large number of mesopores, it can be loaded with a large amount of a catalyst compared to the prior material having the same area, and thus it is useful as a catalyst support, and the reaction efficiency can be maximized. Also, the microcatalytic reactor system can be used in applications including very small steam reformer systems that use biomass fuel such as ethanol, fuel cell reactor systems, VOC and low-concentration-hydrogen treatment systems operable below 200 □, micro heat exchangers, and natural gas reformer systems. Thus, the invention is a useful, industrially applicable invention. | 03-19-2009 |
| 20090197994 | ALGAE FIBER-REINFORCED BICOMPOSITE AND METHOD FOR PREPARING THE SAME - Disclosed herein are an environmentally-friendly biocomposite prepared from a mixture, as a reinforcement, of algae fibers extracted from algae and a polymeric reagent by means of high-temperature compression-molding, and a method for preparing the biocomposite. | 08-06-2009 |
| 20090246511 | CELLULOSE CARBIDE MATERIAL HAVING GRAPHITE NANOLAYER AND SYNTHESIS METHOD THEREOF - Disclosed herein is a cellulose carbide material having a graphite nanosized surface layer directly carbonized from a cellulose fiber, and a method of synthesizing a cellulose carbide material having a graphite nanolayer on a surface thereof, including: i) heating a cellulose fiber in a reactor; ii) forming a primary carbide while maintaining temperature of the reactor; iii) cooling the formed primary carbide; iv) heating the cooled primary carbide; v) forming a secondary carbide while maintaining temperature of the reactor; vi) cooling the formed secondary carbide. | 10-01-2009 |
| 20110159221 | INORGANIC HOLLOW YARNS AND METHOD OF MANUFACTURING THE SAME - Disclosed herein is a method of manufacturing inorganic hollow yarns, such as cermets, oxide-non oxide composites, poorly sinterable non-oxides, and the like, at low costs. The method includes preparing a composition comprising a self-propagating high temperature reactant, a polymer and a dispersant, wet-spinning the composition through a spinneret to form wet-spun yarns, washing and drying the wet-spun yarns to form polymer-self propagating high temperature reactant hollow yarns, and heat-treating the polymer-self propagating high temperature reactant hollow yarns to remove a polymeric component from the polymer-self propagating high temperature reactant hollow yarns while inducing self-propagating high temperature reaction of the self-propagating high temperature reactant to form inorganic hollow yarns. The composition comprises 45˜60 wt % of the self-propagating high temperature reactant, 6˜17 wt % of the polymer, 0.1˜4 wt % of the dispersant, and the balance of an organic solvent. | 06-30-2011 |
| Patent application number | Description | Published |
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| 20090121296 | Semiconductor device including dummy gate part and method of fabricating the same - In a reliable semiconductor device and a method of fabricating the semiconductor device, a difference in height between upper surfaces of a cell region and a peripheral region (also referred to as a level difference) is minimized by optimizing dummy gate parts. The semiconductor device includes a semiconductor substrate including a cell region and a peripheral region surrounding the cell region, a plurality of dummy active regions surrounded by a device isolating region and formed apart from each other, and a plurality of dummy gate parts formed on the dummy active regions and on the device isolating regions located between the dummy active regions, wherein each of the dummy gate parts covers two or more of the dummy active regions. | 05-14-2009 |
| 20090262580 | FLASH MEMORY DEVICE ADAPTED TO PREVENT READ FAILURES DUE TO DUMMY STRINGS - In a NAND flash memory device, a dummy NAND string is arranged between a plurality of normal NAND strings. A dummy bit line connected to the dummy NAND string is formed and/or controlled such that when program voltages are applied to the normal NAND strings, memory cells within the dummy NAND string are not programmed. | 10-22-2009 |
| 20090309147 | Semiconductor memory device and method of fabricating the same - Provided are a semiconductor memory device whereby generation of dishing during planarization of a peripheral circuit region is suppressed, and a method of fabricating the semiconductor memory device. The semiconductor memory device includes a semiconductor substrate comprising a first active area in a memory cell region and a second active area in a peripheral circuit region; a plurality of first isolation films and a plurality of second isolation films protruding from a surface of the semiconductor substrate and defining the first active area and the second active area, respectively; and at least one polish stopper film formed within the second active area and protruding from the surface of the semiconductor substrate. | 12-17-2009 |
