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| 20100254063 | STEP DOWN DECHUCKING - A method and an apparatus for dechucking an electrostatic chuck are disclosed. The gas escapes through an opening between a wafer and a chuck in each stage of a multi-stages process. In each stage, during at least a portion of the stage, the chucking voltage is reduced to a value less than the least threshold voltage needed for holding the wafer, so that the wafer is pushed away from the chuck by the gas. Hence, the gas can escape from an opening between the wafer and the chuck, thereby increasing the dechucking rate. By controlling the decrement and/or the duration of the reduced voltage, any potential damages due to the pushed-away wafer can be minimized. | 10-07-2010 |
| 20110018423 | INDIRECT HEATED CATHODE OF ION IMPLANTER - A proposed indirect heated cathode has an inner tubular shell inserted into an arc chamber for creating plasma by a filament, which is disposed in the inner tubular shell and then covered by an end cap. There are at least two outstanding talons disposed on the end surface of the inner tubular shell, and a step gap is configured on between the end surface of the inner tubular shell and the outstanding talons. The end cap can be lodged into the step gap, and fixed. Therefore, the end cap can be easily uncovered from the end of the inner tubular shell, as a result to simplify the replacement of the filament. | 01-27-2011 |
| 20110095339 | Semiconductor device and method for manufacturing the same - A semiconductor device has at least two main carbon-rich regions and two additional carbon-rich regions. The main carbon-rich regions are separately located in a substrate so that a channel region is located between them. The additional carbon-rich regions are respectively located underneath the main carbon-rich regions. The carbon concentrations is higher in the main carbon-rich regions and lower in the additional carbon-rich regions, and optionally, the absolute value of a gradient of the carbon concentration of the bottom portion of the main carbon-rich regions is higher than the absolute value of a gradient of the carbon concentration of the additional carbon-rich regions. Therefore, the leakage current induced by a lattice mismatch effect at the carbon-rich and the carbon-free interface can be minimized. | 04-28-2011 |
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| 20090244789 | METHOD AND SYSTEM FOR PROVIDING A HARD BIAS CAPPING LAYER - The method and system for providing a magnetoresistive device are disclosed. The magnetoresistive device is formed from a plurality of magnetoresistive layer. The method and system include providing a mask. The mask covers a first portion of the magnetoresistive element layers in at least one device area. The magnetoresistive element(s) are defined using the mask. The method and system include depositing hard bias layer(s). The method and system also include providing a hard bias capping structure on the hard bias layer(s). The hard bias capping structure includes a first protective layer and a planarization stop layer. The first protective layer resides between the planarization stop layer and the hard bias layer(s). The method and system also include performing a planarization. The planarization stop layer is configured for the planarization. | 10-01-2009 |
| 20100044680 | Novel underlayer for high performance magnetic tunneling junction MRAM - An MRAM structure is disclosed in which the bottom electrode has an amorphous TaN capping layer to consistently provide smooth and dense growth for AFM, pinned, tunnel barrier, and free layers in an overlying MTJ. Unlike a conventional Ta capping layer, TaN is oxidation resistant and has high resistivity to avoid shunting of a sense current caused by redeposition of the capping layer on the sidewalls of the tunnel barrier layer. Alternatively, the α-TaN layer is the seed layer in the MTJ. Furthermore, the seed layer may be a composite layer comprised of a NiCr, NiFe, or NiFeCr layer on the α-TaN layer. An α-TaN capping layer or seed layer can also be used in a TMR read head. An MTJ formed on an α-TaN capping layer has a high MR ratio, high Vb, and a RA similar to results obtained from MTJs based on an optimized Ta capping layer. | 02-25-2010 |
| 20110076785 | Process to fabricate bottom electrode for MRAM device - Formation of a bottom electrode for an MTJ device on a silicon nitride substrate is facilitated by including a protective coating that is partly consumed during etching of the alpha tantalum portion of said bottom electrode. Adhesion to SiN is enhanced by using a TaN/NiCr bilayer as “glue”. | 03-31-2011 |
| 20110089139 | PROCESS FOR FABRICATING ULTRA-NARROW DIMENSION MAGNETIC SENSOR - A method for manufacturing a magnetoresistive read sensor that allows the sensor to be constructed with clean well defined side junctions, even at very narrow track widths. The method involves using first and second etch mask layers, that are constructed of materials such that the second mask (formed over the first mask) can act as a mask during the patterning of the first mask (bottom mask). The first mask has a well defined thickness that is defined by deposition and which is not affected by the etching processes used to define the mask. This allows the total ion milling etch mask thickness to be well controlled before the ion milling process used to define the sensor side walls. | 04-21-2011 |
| 20110089140 | PROCESS FOR FABRICATING ULTRA-NARROW TRACK WIDTH MAGNETIC SENSOR - A method for manufacturing a magnetoresistive sensor at very small dimensions with well a controlled track width and clean damage free side wall junctions. The method uses nano-imprinting rather than photolithography to pattern a resist layer. This eliminates the track width variations inherent in photolithographic patterning. The use of nano-imprinting also eliminates the need for a bottom anti-reflective coating beneath the resist layer, thereby also eliminating the need for an additional etch process to remove the bottom anti-reflective coating, which would also cause variations in track width. | 04-21-2011 |
| 20110117677 | Spacer structure in MRAM cell and method of its fabrication - Methods are presented for fabricating an MTJ element having a uniform vertical distance between its free layer and a bit line and, in addition, having a protective spacer layer formed abutting the lateral sides of the MTJ element to eliminate leakage currents between MTJ layers and the bit line. Each method forms a dielectric spacer layer on the lateral sides of the MTJ element and, depending on the method, includes an additional layer that protects the spacer layer during etching processes used to form a Cu damascene bit line. At various stages in the process, a dielectric layer is also formed to act as a CMP stop layer so that the capping layer on the MTJ element is not thinned by the CMP process that planarizes the surrounding insulation. Subsequent to planarization, the stop layer is removed by an anisotropic etch of such precision that the MTJ element capping layer is not reduced in thickness and serves to maintain uniform vertical distance between the bit line and the MTJ free layer. | 05-19-2011 |
| 20110120878 | METHOD FOR MANUFACTURING A PERPENDICULAR MAGNETIC WRITE HEAD HAVING A TAPERED WRITE POLE AND NON-MAGNETIC BUMP STRUCTURE - A method for manufacturing a magnetic write head having a write pole and a trailing wrap around magnetic shield, and having a non-magnetic step layer and a non-magnetic bump to provide additional spacing between the write pole and the trailing wrap around shield at a location removed from the air bearing surface. A magnetic write pole material is deposited on a substrate and a non-magnetic step layer is deposited over the write pole. A reactive ion milling can he used to pattern the non-magnetic step layer to have a front edge that is located a desired distance from an air hearing surface. A patterning and ion milling process is then performed to define a write pole, and then a layer of alumina is deposited and ion milled to from a tapered, non-magnetic bump at the front the non-magnetic step layer. | 05-26-2011 |
| 20110132869 | MAGNETIC WRITE HEAD MANUFACTURED BY DAMASCENE PROCESS PRODUCING A TAPERED WRITE POLE WITH A NON-MAGNETIC STEP AND NON-MAGNETIC BUMP - A method for manufacturing a magnetic write head having a non-magnetic step layer, non-magnetic bump at the front of the non-magnetic step layer and a write pole with a tapered trailing edge. The tapered portion of the trailing edge of the write pole is formed by a two step process that allows the write pole taper to be formed with greater accuracy and repeatability than would be possible using a single step taper process. An alternative method is also described on how to make a non-magnetic bump structure with adjustable bump throat height prior to Damascene side shield gap formation in a Damascene wrap around shield head. | 06-09-2011 |
| 20110133300 | Bottom electrode for MRAM device - A multi-layered bottom electrode for an MTJ device on a silicon nitride substrate is described. It comprises a bilayer of alpha tantalum on ruthenium which in turn lies on a nickel chrome layer over a second tantalum layer. | 06-09-2011 |
| 20110134567 | PERPENDICULAR MAGNETIC WRITE HEAD WITH WRAP-AROUND SHIELD, SLANTED POLE AND SLANTED POLE BUMP FABRICATED BY DAMASCENE PROCESS - A magnetic write head having a write pole with a tapered trailing edge. The write head has a non-magnetic step layer and a non-magnetic bump formed on the front edge of the magnetic step layer. A non-magnetic trailing gap layer is formed over the tapered trailing edge of the write pole and over the non-magnetic bump and over the non-magnetic step layer. A magnetic trailing shield is formed over at least a portion of the non-magnetic gap layer. | 06-09-2011 |
| 20110134568 | PMR WRITER AND METHOD OF FABRICATION - Methods for fabrication of tapered magnetic poles with a non-magnetic front bump layer. A magnetic pole may have a tapered surface at or near an air bearing surface (ABS), wherein a thickness of the write pole increases in a direction away from the ABS. A non-magnetic front bump layer may be formed on the tapered surface of the magnetic pole and away from the ABS. The front bump layer may increase the separation distance between a shield layer and the magnetic pole near the tapered surface, thereby improving the performance of the write head. | 06-09-2011 |
| 20110134569 | PMR WRITER AND METHOD OF FABRICATION - Methods for fabrication of tapered magnetic poles with a non-magnetic front bump layer. A magnetic pole may have a plurality of tapered surfaces at or near and air bearing surface (ABS), wherein a thickness of the write pole increases in a direction away from the ABS. A non-magnetic front bump layer may be formed on one or more of the tapered surfaces of the magnetic pole at a distance from the ABS. The front bump layer may increase the separation distance between a shield layer and the magnetic pole near the tapered surface, thereby improving the performance of the write head. | 06-09-2011 |
| 20110135959 | PMR WRITER AND METHOD OF FABRICATION - Embodiments of the invention provide a magnetic recording head including a write pole having increasing magnetic moment from a leading edge of the write pole to a trailing edge of the write pole, and methods for manufacturing the same. The write pole may be formed with a plurality of different magnetic material layers having different magnetic moments. A first magnetic layer may be formed with a first magnetic material adjacent a leading edge of the write pole. A second magnetic layer having a greater moment may be formed on the first magnetic layer, thereby increasing the magnetic moment from the leading edge of the write pole to the trailing edge of the write pole. | 06-09-2011 |
| 20110135962 | PMR WRITER AND METHOD OF FABRICATION - Methods for fabrication of tapered magnetic poles with a non-magnetic front bump layer. A magnetic pole may have a tapered surface at or near and air bearing surface (ABS), wherein a thickness of the write pole increases in a direction away from the ABS. A non-magnetic front bump layer may be formed on the tapered surface of the magnetic pole and away from the ABS. The front bump layer may increase the separation distance between a shield layer and the magnetic pole near the tapered surface, thereby improving the performance of the write head. | 06-09-2011 |
| 20110146062 | METHOD FOR MANUFACTURING A MAGNETIC WRITE HEAD HAVING A WRAP AROUND SHIELD THAT IS MAGNETICALLY COUPLED WITH A LEADING MAGNETIC SHIELD - A method for manufacturing a magnetic write head having a leading magnetic shield and a trailing magnetic shield that are arranged to prevent the lost of magnetic write field to the trailing magnetic shield. The write head includes a non-magnetic step layer that provides additional spacing between the trailing magnetic shield and the write pole at a region removed from the air bearing surface. | 06-23-2011 |
| 20110151279 | MAGNETIC WRITE HEAD MANUFACTURED BY AN ENHANCED DAMASCENE PROCESS PRODUCING A TAPERED WRITE POLE WITH A NON-MAGNETIC SPACER AND NON-MAGNETIC BUMP - A magnetic write head having a tapered trailing edge and having a magnetic layer formed over a trailing edge of the write pole at a location recessed from the ABS, the magnetic layer being separated from the trailing edge of the write pole by a thin non-magnetic layer. The thin non-magnetic layer is preferably sufficiently thin that the magnetic layer can function as a portion of the write pole in a region removed from the ABS. A trailing magnetic shield is formed over the write pole and is separated from the write pole by a non-magnetic trailing gap layer. A non-magnetic spacer layer can be formed over the magnetic layer to provide additional separation between the magnetic layer and the trailing magnetic shield. | 06-23-2011 |
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| 20100175249 | Method for Fabricating Thin Touch Sensor Panels - A method for fabricating thin DITO or SITO touch sensor panels with a thickness less than a minimum thickness tolerance of existing manufacturing equipment. In one embodiment, a sandwich of two thin glass sheets is formed such that the combined thickness of the glass sheets does not drop below the minimum thickness tolerance of existing manufacturing equipment when thin film process is performed on the surfaces of the sandwich during fabrication. The sandwich may eventually be separated to form two thin SITO/DITO panels. In another embodiment, the fabrication process involves laminating two patterned thick substrates, each having at least the minimum thickness tolerance of existing manufacturing equipment. One or both of the sides of the laminated substrates are then thinned so that when the substrates are separated, each is a thin DITO/SITO panel having a thickness less than the minimum thickness tolerance of existing manufacturing equipment. | 07-15-2010 |
| 20100323166 | Transparent Conductor Thin Film Formation - Substantially transparent conductor layers in touch sensing systems may be formed by forming a barrier layer between an organic layer and a substantially transparent conductive layer. For example, a barrier layer can be formed over the organic layer, and the transparent conductor layer can be formed over the barrier layer. The barrier layer can reduce or prevent outgassing of the organic layer, to help increase the quality of the transparent conductor layer. In another example, a combination layer of two different types of a transparent conductor may be formed over the organic layer by forming a barrier layer of the transparent conductor, and forming a second layer of the transparent conductor on the barrier layer. Outgassing that can occur when forming the barrier layer can cause the transparent conductor of the barrier layer to be of lower-quality, but can result in a higher-quality transparent conductor of the second layer. | 12-23-2010 |
| 20110007020 | TOUCH SENSOR PANEL DESIGN - A touch sensor panel including a plurality of drive lines crossing a plurality of sense lines, forming an array. The plurality of drive lines and the plurality of sense lines are formed by interconnecting sections of at least one conductive material having a truncated diamond shape or formed of interconnected conductive lines. At least one conductive dummy region may be disposed in an area of the touch sensor panel around the truncated diamond shape sections or interconnected conductive lines of the plurality of drive lines and the plurality of sense lines. One or more lines may be formed overlapping the interconnected sections of each of the plurality of drive lines and the plurality of sense lines. | 01-13-2011 |
