| Patent application number | Description | Published |
|---|
| 20080233694 | Transistor Device and Method of Manufacture Thereof - A CMOS device includes high k gate dielectric materials. A PMOS device includes a gate that is implanted with an n-type dopant. The NMOS device may be doped with either an n-type or a p-type dopant. The work function of the CMOS device is set by the material selection of the gate dielectric materials. A polysilicon depletion effect is reduced or avoided. | 09-25-2008 |
| 20090026555 | Transistor with Dopant-Bearing Metal in Source and Drain - A transistor and method of manufacturing thereof. A gate dielectric and gate are formed over a workpiece, and the source and drain regions of a transistor are recessed. The recesses are filled with a dopant-bearing metal, and a low-temperature anneal process is used to form doped regions within the workpiece adjacent the dopant-bearing metal regions. A transistor having a small effective oxide thickness and a well-controlled junction depth is formed. | 01-29-2009 |
| 20090065870 | Semiconductor Devices and Methods of Manufacture Thereof - Semiconductor devices with transistors having different gate dielectric materials and methods of manufacture thereof are disclosed. One embodiment includes a semiconductor device including a workpiece, the workpiece including a first region and a second region proximate the first region. A first transistor is disposed in the first region of the workpiece, the first transistor having at least two first gate electrodes. A first gate dielectric is disposed proximate each of the at least two first gate electrodes, the first gate dielectric comprising a first material. A second transistor is disposed in the second region of the workpiece, the second transistor having at least two second gate electrodes. A second gate dielectric is disposed proximate each of the at least two second gate electrodes, the second gate dielectric comprising a second material. The second material is different than the first material. | 03-12-2009 |
| 20090146217 | Semiconductor Devices and Methods of Manufacture Thereof - Methods of forming transistors and structures thereof are disclosed. A preferred embodiment comprises a semiconductor device including a workpiece, a gate dielectric disposed over the workpiece, and a thin layer of conductive material disposed over the gate dielectric. A layer of semiconductive material is disposed over the thin layer of conductive material. The layer of semiconductive material and the thin layer of conductive material comprise a gate electrode of a transistor. A source region and a drain region are formed in the workpiece proximate the gate dielectric. The thin layer of conductive material comprises a thickness of about 50 Angstroms or less. | 06-11-2009 |
| 20090166752 | Semiconductor Devices and Methods of Manufacture Thereof - A first gate dielectric of a first transistor is disposed over a workpiece in a first region, and a second gate dielectric of a second transistor is disposed over the workpiece in a second region. The second gate dielectric comprises a different material than the first gate dielectric. A first dopant-bearing metal comprising a first dopant is disposed in recessed regions of the workpiece proximate the first gate dielectric, and a second dopant-bearing metal comprising a second dopant is disposed in recessed regions of the workpiece proximate the second gate dielectric. A first doped region comprising the first dopant is disposed in the workpiece adjacent the first dopant-bearing metal. A second doped region comprising the second dopant is disposed in the workpiece adjacent the second dopant-bearing metal. The dopant-bearing metals and the doped regions comprise source and drain regions of the first and second transistors. | 07-02-2009 |
| 20090246894 | Fabrication and Test Methods and Systems - Methods and systems for fabricating and testing semiconductor devices are disclosed. In one embodiment, a method of forming a material includes providing a first workpiece, forming a material on the first workpiece using a first process condition, and measuring a defect state of the material using a test that utilizes a monochromatic light source. If the defect state is below a predetermined value, the material is formed on at least one second workpiece using the first process condition. | 10-01-2009 |
| 20100129968 | Semiconductor Devices and Methods of Manufacture Thereof - Semiconductor devices with transistors having different gate dielectric materials and methods of manufacture thereof are disclosed. One embodiment includes a semiconductor device including a workpiece, the workpiece including a first region and a second region proximate the first region. A first transistor is disposed in the first region of the workpiece, the first transistor having at least two first gate electrodes. A first gate dielectric is disposed proximate each of the at least two first gate electrodes, the first gate dielectric comprising a first material. A second transistor is disposed in the second region of the workpiece, the second transistor having at least two second gate electrodes. A second gate dielectric is disposed proximate each of the at least two second gate electrodes, the second gate dielectric comprising a second material. The second material is different than the first material. | 05-27-2010 |
| 20100219484 | Semiconductor Devices and Methods of Manufacture Thereof - Methods of forming transistors and structures thereof are disclosed. A preferred embodiment comprises a semiconductor device including a workpiece, a gate dielectric disposed over the workpiece, and a thin layer of conductive material disposed over the gate dielectric. A layer of semiconductive material is disposed over the thin layer of conductive material. The layer of semiconductive material and the thin layer of conductive material comprise a gate electrode of a transistor. A source region and a drain region are formed in the workpiece proximate the gate dielectric. The thin layer of conductive material comprises a thickness of about 50 Angstroms or less. | 09-02-2010 |
