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| 20090303827 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device includes a clock supply portion for providing an external clock to the interior of the memory device, a clock transfer portion for transferring the clock from the clock supply portion to each of elements in the memory device and data output portions for outputting data in synchronism the clock from the clock transfer portion, wherein the clock from the clock supply portion to the clock transfer portion swings at a current mode logic (CML) level. | 12-10-2009 |
| 20100085724 | MOBILE TERMINAL INCLUDING INPUT DEVICE HAVING PIEZOELECTRIC SENSOR AND METHOD OF OPERATING THE SAME - A mobile terminal including an input device using a piezoelectric sensor and a method of operating the mobile terminal are provided. The mobile terminal includes: a body; and a piezoelectric sensor unit including a first piezoelectric sensor positioned at a first side surface of the body and to which at least one function key for performing a first specific function corresponding to a user function of the mobile terminal is set and a second piezoelectric sensor positioned at a second side surface of the body and to which at least one function key for performing a second specific function different to the first specific function is set. | 04-08-2010 |
| 20100091598 | SEMICONDUCTOR MEMORY APPARATUS - A semiconductor memory apparatus includes a first data selection section inputted with the first data and second data and output one of the first data and the second data as first selection data in response to an address signal, a second data selection section inputted with the second data and the first selection data and output one of the second data and the first selection data as second selection data depending upon an input and output mode, and a data output section configured to be inputted with the first and second selection data and output first and second output data. | 04-15-2010 |
| 20110242922 | SEMICONDUCTOR MEMORY APPARATUS - A semiconductor memory apparatus includes a first data selection section inputted with the first data and second data and output one of the first data and the second data as first selection data in response to an address signal, a second data selection section inputted with the second data and the first selection data and output one of the second data and the first selection data as second selection data depending upon an input and output mode, and a data output section configured to be inputted with the first and second selection data and output first and second output data. | 10-06-2011 |
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| 20090156263 | PORTABLE TERMINAL HAVING RETRACTABLE SPEAKER - The present invention relates to a portable terminal having retractable speakers that can be used by extending outwards to both sides of the portable terminal. The portable terminal includes a main body, at least one speaker, and a hinge unit. The main body has at least one display unit arranged on a first surface of the main body and a recess formed on a second surface of the main body opposite to the first surface. The speaker is retracted into the recess. The hinge unit is arranged at an edge of the recess to connect the speaker to the main body, to extend the speaker outwards from the recess, and to retract the speaker into the recess. The speaker outputs a sound outwards from the first surface of the main body when extended. The slope angle of the speaker can be adjusted by rotating the speaker about an axis of the hinge unit when extended. | 06-18-2009 |
| 20090170566 | MOBILE TERMINAL HAVING REAR KEYPAD - A mobile terminal having a rear keypad is provided. The mobile terminal includes: a main body having a front surface and a rear surface opposite to the front surface; a touch screen disposed at the front surface of the main body; and a key input device having a keypad disposed at the rear surface of the main body and extendable outwards to sides of the touch screen. | 07-02-2009 |
| 20090176543 | MOBILE COMMUNICATION DEVICE - A mobile communication device includes a first plate, and a second plate provided with guide rails on respective edges thereof and slidably coupled to the first plate. A main body is coupled to the first plate and a sub body is coupled to the second plate. Torsion springs are provided on the first plate, adjacent to respective edges of the first plate. Contact members are respectively provided at one end of each torsion spring and each contact member contacts a corresponding guide rail due to elasticity of the torsion spring. Guide slits are disposed in the first plate, adjacent to respective edges of the first plate. Each guide slit receives a corresponding contact member. | 07-09-2009 |
| 20090186650 | MOBILE COMMUNICATION DEVICE - A mobile communication device includes a body, a first QWERTY key unit having a plurality of QWERTY keys to input alphabets, numbers, and symbols, and a second QWERTY key unit having a plurality of the QWERTY keys to input alphabets, numbers, and symbols. The first QWERTY key unit is fitted on a first end of the body to be pivotally folded backward and forward with respect to the body. The second QWERTY key unit is fitted on a second end of the body to be pivotally folded backward and forward with respect to the body. | 07-23-2009 |
| 20100250548 | INFORMATION TERMINAL EQUIPPED WITH CONTENT SEARCH SYSTEM - An information terminal equipped with a content search system is provided. The information terminal receives a query from a user, analyzes the query, determines a search type on the basis of the result of the analysis, searches for content items corresponding to the query according to the search type, and displays the content items, wherein the information terminal receives a content item selected by the user from the displayed content items, and reads and provides content corresponding to the content item from the content database. Therefore, the information terminal organically combines an information search technique with a content providing technique so that a user can quickly and conveniently search for his or her desired content. | 09-30-2010 |
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| 20080268653 | METHOD OF FORMING HIGH DIELECTRIC FILM USING ATOMIC LAYER DEPOSITION AND METHOD OF MANUFACTURING CAPACITOR HAVING THE HIGH DIELECTRIC FILM - A method of forming a high dielectric film using atomic layer deposition (ALD), and a method of manufacturing a capacitor having the high dielectric film, include supplying a precursor containing a metal element to a semiconductor substrate and purging a reactor; supplying an oxidizer and purging the reactor; and supplying a reaction source containing nitrogen and purging the reactor. | 10-30-2008 |
| 20100124805 | METHODS OF FORMING SEMICONDUCTOR DEVICES HAVING GATES WITH DIFFERENT WORK FUNCTIONS USING NITRIDATION - A semiconductor device that has a dual gate having different work functions is simply formed by using a selective nitridation. A gate insulating layer is formed on a semiconductor substrate including a first region and a second region, on which devices having different threshold voltages are to be formed. A diffusion inhibiting material is selectively injected into the gate insulating layer in one of the first region and the second region. A diffusion layer is formed on the gate insulating layer. A work function controlling material is directly diffused from the diffusion layer to the gate insulating layer using a heat treatment, wherein the gate insulting layer is self-aligned capped with the selectively injected diffusion inhibiting material so that the work function controlling material is diffused into the other of the first region and the second region. The gate insulating layer is entirely exposed by removing the diffusion layer. A gate electrode layer is formed on the exposed gate insulating layer. A first gate and a second gate having different work functions are respectively formed in the first region and the second region by etching the gate electrode layer and the gate insulating layer | 05-20-2010 |
| 20100164009 | Method of manufacturing dual gate semiconductor device - The method involves providing a semiconductor substrate comprising first and second regions in which different conductive metal-oxide semiconductor (MOS) transistors are to be formed. A gate dielectric layer above the semiconductor substrate sequentially forming a first metallic conductive layer and a second metallic conductive layer on and above the gate dielectric layer; covering the second region with a mask, and performing ion plantation of a first material into the first metallic conductive layer of the first region. Removing the second metallic conductive layer of the first region and forming a first gate electrode of the first region and a second gate electrode of the second region by patterning the gate dielectric layer and the first metallic conductive layer of the first region, and the gate dielectric layer, the first metallic conductive layer, and the second metallic conductive layer of the second region. The first and second regions of the semiconductor substrate having different work functions because the gate electrodes of the first and second regions have different thicknesses and at least one of the first and second gate electrodes include impurities. | 07-01-2010 |
| 20100203716 | METHOD OF FABRICATING SEMICONDUCTOR DEVICE HAVING DUAL GATE - A method of fabricating a semiconductor device having a dual gate allows for the gates to have a wide variety of threshold voltages. The method includes forming a gate insulation layer, a first capping layer, and a barrier layer in the foregoing sequence across a first region and a second region on a substrate, exposing the gate insulation layer on the first region by removing the first capping layer and the barrier layer from the first region, forming a second capping layer on the gate insulation layer in the first region and on the barrier layer in the second region, and thermally processing the substrate on which the second capping layer is formed. The thermal processing causes material of the second capping layer to spread into the gate insulation layer in the first region and material of the first capping layer to spread into the gate insulation layer in the second region. Thus, devices having different threshold voltages can be formed in the first and second regions. | 08-12-2010 |
| 20110121399 | COMPLEMENTARY METAL OXIDE SEMICONDUCTOR DEVICE HAVING METAL GATE STACK STRUCTURE AND METHOD OF MANUFACTURING THE SAME - A complementary metal oxide semiconductor (CMOS) device including: a semiconductor substrate including a NMOS region and a PMOS region; a NMOS metal gate stack structure on the NMOS region and including a first high dielectric layer, a first barrier metal gate on the first high dielectric layer and including a metal oxide nitride layer, and a first metal gate on the first barrier metal gate; and a PMOS metal gate stack structure on the PMOS region and including a second high dielectric layer, a second barrier metal gate on the second high dielectric layer and including a metal oxide nitride layer, and a second metal gate on the second barrier metal gate. | 05-26-2011 |
| 20110180879 | CMOS TRANSISTOR, SEMICONDUCTOR DEVICE INCLUDING THE TRANSISTOR, AND SEMICONDUCTOR MODULE INCLUDING THE DEVICE - Provided are a CMOS transistor, a semiconductor device having the transistor, and a semiconductor module having the device. The CMOS transistor may include first and second interconnection structures respectively disposed in first and second regions of a semiconductor substrate. The first and second regions of the semiconductor substrate may have different conductivity types. The first and second interconnection structures may be disposed on the semiconductor substrate. The first interconnection structure may have a different stacked structure from the second interconnection structure. The CMOS transistor may be disposed in the semiconductor device. The semiconductor device may be disposed in the semiconductor module. | 07-28-2011 |
| 20110223758 | METHOD OF FABRICATING SEMICONDUCTOR DEVICE HAVING DUAL GATE - A method of fabricating a semiconductor device having a dual gate allows for the gates to have a wide variety of threshold voltages. The method includes forming a gate insulation layer, a first capping layer, and a barrier layer in the foregoing sequence across a first region and a second region on a substrate, exposing the gate insulation layer on the first region by removing the first capping layer and the barrier layer from the first region, forming a second capping layer on the gate insulation layer in the first region and on the barrier layer in the second region, and thermally processing the substrate on which the second capping layer is formed. The thermal processing causes material of the second capping layer to spread into the gate insulation layer in the first region and material of the first capping layer to spread into the gate insulation layer in the second region. Thus, devices having different threshold voltages can be formed in the first and second regions. | 09-15-2011 |
