| Patent application number | Description | Published |
|---|
| 20080230782 | PHOTOCONDUCTIVE DEVICES WITH ENHANCED EFFICIENCY FROM GROUP IV NANOPARTICLE MATERIALS AND METHODS THEREOF - A device for generating a plurality of electron-hole pairs from a photon is disclosed. The device includes a substrate, a first electrode formed above the substrate, and a first doped Group IV nanoparticle thin film deposited on the first electrode. The device further includes an intrinsic layer deposited on the first doped Group IV nanoparticle thin film, wherein the intrinsic layer includes a matrix material with a melting temperature T | 09-25-2008 |
| 20080284313 | Structured Luminescence Conversion Layer - An apparatus device such as a light source is disclosed which has an OLED device and a structured luminescence conversion layer deposited on the substrate or transparent electrode of said OLED device and on the exterior of said OLED device. The structured luminescence conversion layer contains regions such as color-changing and non-color-changing regions with particular shapes arranged in a particular pattern. | 11-20-2008 |
| 20080305619 | METHOD OF FORMING GROUP IV SEMICONDUCTOR JUNCTIONS USING LASER PROCESSING - A method forming a Group IV semiconductor junction on a substrate is disclosed. The method includes depositing a first set Group IV semiconductor nanoparticles on the substrate. The method also includes applying a first laser at a first laser wavelength, a first fluence, a first pulse duration, a first number of repetitions, and a first repetition rate to the first set Group IV semiconductor nanoparticles to form a first densified film with a first thickness, wherein the first laser wavelength and the first fluence are selected to limit a first depth profile of the first laser to the first thickness. The method further includes depositing a second set Group IV semiconductor nanoparticles on the first densified film. The method also includes applying a second laser at a second laser wavelength, a second fluence, a second pulse duration, a second number of repetitions, and a second repetition rate to the second set Group IV semiconductor nanoparticles to form a second densified film with a second thickness, wherein the second laser wavelength and the second fluence are selected to limit a second depth profile of the second laser to the second thickness. | 12-11-2008 |
| 20090269913 | JUNCTION FORMATION ON WAFER SUBSTRATES USING GROUP IV NANOPARTICLES - A method of forming a diffusion region is disclosed. The method includes depositing a nanoparticle ink on a surface of a wafer to form a non-densified thin film, the nanoparticle ink having set of nanoparticles, wherein at least some nanoparticles of the set of nanoparticles include dopant atoms therein. The method also includes heating the non-densified thin film to a first temperature and for a first time period to remove a solvent from the deposited nanoparticle ink; and heating the non-densified thin film to a second temperature and for a second time period to form a densified thin film, wherein at least some of the dopant atoms diffuse into the wafer to form the diffusion region. | 10-29-2009 |
| 20100136718 | METHODS AND APPARATUS FOR ALIGNING A SET OF PATTERNS ON A SILICON SUBSTRATE - A method of aligning a set of patterns on a substrate, the substrate including a substrate surface, is disclosed. The method includes depositing a set of silicon nanoparticles on the substrate surface, the set of nanoparticles including a set of ligand molecules including a set of carbon atoms, wherein a first set of regions is formed where the silicon nanoparticles are deposited and the remaining portions of the substrate surface define a second set of regions. The method also includes densifying the set of silicon nanoparticles into a thin film wherein a set of silicon-organic zones are formed on the substrate surface, wherein the first set of regions has a first reflectivity value and the second set of regions has a second reflectivity value. The method further includes illuminating the substrate surface with an illumination source, wherein the ratio of the second reflectivity value to the first reflectivity value is greater than about 1.1. | 06-03-2010 |
| 20110079768 | PHOTOACTIVE MATERIALS CONTAINING BULK AND QUANTUM-CONFINED SEMICONDUCTOR STRUCTURES AND OPTOELECTRONIC DEVICES MADE THEREFROM - The present invention provides photoactive materials that include quantum-confined semiconductor nanostructures in combination with non-quantum confined and bulk semiconductor structures to enhance or create a type II band offset structure. The photoactive materials are well-suited for use as the photoactive layer in photoactive devices, including photovoltaic devices, photoconductors and photodetectors. | 04-07-2011 |
| 20110091731 | SEMICONDUCTOR THIN FILMS FORMED FROM GROUP IV NANOPARTICLES - Native Group IV semiconductor thin films formed from coating substrates using formulations of Group IV nanoparticles are described. Such native Group IV semiconductor thin films leverage the vast historical knowledge of Group IV semiconductor materials and at the same time exploit the advantages of Group IV semiconductor nanoparticles for producing novel thin films which may be readily integrated into a number of devices. | 04-21-2011 |
