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Homeijer
Biian Homeijer, Corvallis, OR US
| Patent application number | Description | Published |
|---|---|---|
| 20120027236 | ACOUSTIC PRESSURE TRANSDUCER - Acoustic transducer means are provided. A monolithic semiconductor layer defines a plate, a pair of oppositely disposed torsional hinges, a flexible extension and at least a portion of a support structure. Acoustic pressure communicated to the plate results in tensile strain of the flexible extension. The flexible extension provides a varying electrical characteristic responsive to the tensile strain. An electric signal corresponding to the acoustic pressure can be derived from the varying electrical characteristic of the flexible extension. | 02-02-2012 |
Brian Homeijer, Gainsville, FL US
| Patent application number | Description | Published |
|---|---|---|
| 20120027236 | ACOUSTIC PRESSURE TRANSDUCER - Acoustic transducer means are provided. A monolithic semiconductor layer defines a plate, a pair of oppositely disposed torsional hinges, a flexible extension and at least a portion of a support structure. Acoustic pressure communicated to the plate results in tensile strain of the flexible extension. The flexible extension provides a varying electrical characteristic responsive to the tensile strain. An electric signal corresponding to the acoustic pressure can be derived from the varying electrical characteristic of the flexible extension. | 02-02-2012 |
Brian D. Homeijer, Corvallis, OR US
| Patent application number | Description | Published |
|---|---|---|
| 20120025851 | CAPACITIVE SENSORS - The present disclosure includes capacitive sensors and methods of forming capacitive sensors. One capacitive sensor includes a first substrate structure having a first dielectric material formed thereon and electrodes of a first electrode array formed on the first dielectric material. The sensor includes a second substrate structure facing the first substrate structure and having a second dielectric material formed thereon and electrodes of a second electrode array formed on the second dielectric material. The sensor includes a removed portion of the first dielectric material forming a recess between adjacent electrodes of the first electrode array, and the first substrate structure is moveable with respect to the second substrate structure. | 02-02-2012 |
Sara J. Homeijer, Corvallis, OR US
| Patent application number | Description | Published |
|---|---|---|
| 20120025851 | CAPACITIVE SENSORS - The present disclosure includes capacitive sensors and methods of forming capacitive sensors. One capacitive sensor includes a first substrate structure having a first dielectric material formed thereon and electrodes of a first electrode array formed on the first dielectric material. The sensor includes a second substrate structure facing the first substrate structure and having a second dielectric material formed thereon and electrodes of a second electrode array formed on the second dielectric material. The sensor includes a removed portion of the first dielectric material forming a recess between adjacent electrodes of the first electrode array, and the first substrate structure is moveable with respect to the second substrate structure. | 02-02-2012 |