Patent application number | Description | Published |
20110185744 | METHOD AND APPARATUS FOR COMBINED CYCLE POWER PLANT STARTUP - A combined cycle power plant startup system is provided. The system includes a steam turbine, a HRSG, a condenser, and a bypass system. The steam turbine may include a turbine section. The HRSG may be operably connected to the steam turbine for providing steam to the steam turbine. The HRSG may include a reheater. The bypass system may be configured to adjust the steam pressure downstream of the reheater by routing steam downstream of the reheater to the condenser. The bypass system may include at least one bypass line, at least one control valve operably connected to the at least one bypass line, a pressure gauge configured to monitor the steam pressure downstream of the reheater, and a controller configured to communicate with the pressure gauge and operate the at least one control valve. | 08-04-2011 |
20120228063 | HYDRAULIC-ASSISTED LUBRICATION SYSTEM AND METHOD - In one embodiment, the invention provides a lubrication system for a machine comprising: a direct current (DC) motor; a battery system for powering the DC motor; a lubricating system in communication with the DC motor, the lubricating system including a supply of lubricating oil and a pump for delivering the lubricating oil to at least one component of the machine requiring lubrication; a hydraulic motor operably coupled to a shaft of the DC motor; a supply of a pressurized fluid in communication with the hydraulic motor; and a control device for discharging the supply of pressurized fluid into the hydraulic motor to power the hydraulic motor, whereby the hydraulic motor, when powered by the supply of pressurized fluid, is operable to turn the shaft of the DC motor, thereby reducing an operating current supplied to the DC motor by the battery system. | 09-13-2012 |
Patent application number | Description | Published |
20100064655 | SYSTEM AND METHOD FOR MANAGING TURBINE EXHAUST GAS TEMPERATURE - A system for thermal management of exhaust gas includes: a nozzle configured to be disposed in fluid communication with an exhaust of a turbomachine; a mixing conduit in fluid communication with the nozzle; at least one secondary inlet disposed around a periphery of the nozzle and extending between an exterior of the mixing conduit and an interior of the mixing conduit; a variable nozzle mechanism configured to be movable between i) a first position in which the mechanism is configured to close the at least one secondary inlet and ii) a second position in which the mechanism is configured to open the at least one secondary inlet and adjust a selected diameter of the nozzle; and an actuator configured to move the variable nozzle mechanism between the first position and the second position. | 03-18-2010 |
20100229523 | CONTINUOUS COMBINED CYCLE OPERATION POWER PLANT AND METHOD - A combined cycle power plant includes a gas turbine, a steam turbine, a generator coupled to the gas turbine and a generator coupled to the steam turbine, and an auxiliary boiler operatively coupled to the steam turbine. The power plant is continuously operated in a combined cycle mode during operating of the gas turbine by starting the steam turbine first. | 09-16-2010 |
20100242430 | COMBINED CYCLE POWER PLANT INCLUDING A HEAT RECOVERY STEAM GENERATOR - A combined cycle power plant includes a gas turbomachine, a steam turbomachine operatively coupled to the gas turbomachine, and a heat recovery steam generator operatively coupled to the gas turbomachine and the steam turbomachine. The heat recovery steam generator includes a high pressure reheat section provided with at least one high pressure superheater and at least one reheater. The combined cycle power plant further includes a controller operatively connected to the gas turbomachine, the steam turbomachine and the heat recovery steam generator. The controller is selectively activated to initiate a flow of steam through the heat recovery steam generator following shutdown of the gas turbomachine to lower a temperature of at least one of the high pressure superheater and the at least one reheater and reduce development of condensate quench effects during HRSG purge of a combined cycle power plant shutdown. | 09-30-2010 |
20100305768 | CONTROL FOR IMPROVED THERMAL PERFORMANCE OF A STEAM TURBINE AT PARTIAL LOAD - A method controls at least a portion of a combined cycle power plant having at least one gas turbine, at least one heat recovery steam generator, and at least one steam turbine. The method includes developing an actual operating curve of a steam characteristic of the at least one heat recovery steam generator versus an amount of steam provided to the at least one steam turbine from the at least one heat recovery steam generator. The method also includes determining the steam characteristic of the at least one heat recovery steam generator at a point in time during operation of the combined cycle power plant. The method further includes providing an amount of the steam from the at least one heat recovery steam generator to the at least one steam turbine depending upon the determined steam characteristic of the at least one heat recovery steam generator at the point in time. | 12-02-2010 |
20110283706 | SYSTEM AND METHODS FOR PRE-HEATING FUEL IN A POWER PLANT - A method for assembling a fuel supply system for use with a power generation system. The method includes coupling a fuel heater to a fuel source for heating a fuel. A first heating assembly is coupled to the fuel heater for heating a first flow of water channeled to the fuel heater. A heat recovery steam generator assembly is coupled to the fuel heater for channeling a second flow of heated water to the fuel heater. A valve assembly is coupled between the first heating assembly, the heat recovery steam generator assembly, and the fuel heater to enable a flow of heated water from the first heating assembly and the heat recovery steam generator assembly to be selectively channeled to the fuel heater. | 11-24-2011 |
20120036828 | Combined Cycle Power Plant Including a Heat Recovery Steam Generator - A combined cycle power plant includes a gas turbomachine, a steam turbomachine operatively coupled to the gas turbomachine, and a heat recovery steam generator operatively coupled to the gas turbomachine and the steam turbomachine. The heat recovery steam generator includes a high pressure reheat section provided with at least one high pressure superheater and at least one reheater. The combined cycle power plant further includes a controller operatively connected to the gas turbomachine, the steam turbomachine and the heat recovery steam generator. The controller is selectively activated to initiate a flow of steam through the heat recovery steam generator following shutdown of the gas turbomachine to lower a temperature of at least one of the high pressure superheater and the at least one reheater and reduce development of condensate quench effects during HRSG purge of a combined cycle power plant shutdown. | 02-16-2012 |
20120260621 | Combined Cycle Power Plant - A combined cycle power plant is provided and includes a gas turbine engine to generate power from combustion of a fuel and air mixture, a heat recovery steam generator (HRSG) disposed downstream from the gas turbine engine to receive heat energy from the gas turbine engine from which steam is produced, the HRSG including a superheating element and a drum element, and a steam turbine engine to be receptive of the steam produced in the HRSG and to generate power from the received steam, the HRSG further including a valve operably disposed to isolate the superheating element from the drum element when a risk of condensate formation in the HRSG exists. | 10-18-2012 |
20120290104 | SYSTEM AND METHOD FOR OPTIMIZING PLANT OPERATIONS - Embodiments of the present disclosure include systems and a method. In one embodiment, a system is provided. The system includes a risk calculation system configured to calculate a risk based on a static input and a dynamic input, and a decision support system configured to use the risk to derive a decision. The system also includes a plant control system configured to update operations of a plant based on the decision, wherein the decision predicts future plant conditions. | 11-15-2012 |
20130073101 | Systems and Methods for Startup of a Power Plant - Embodiments of the invention can provide systems and methods for startup of a power plant. According to one embodiment of the invention, a system can be provided. The system can include a computer processor. The system can also include a memory operable to store computer-executable instructions operable to determine a current state of the power plant; determine an anticipated future state of the power plant; and determine a startup profile between the current state of the power plant and the anticipated future state of the power plant based on at least one parameter and a desired result. | 03-21-2013 |
Patent application number | Description | Published |
20100281870 | SYSTEM AND METHOD FOR HEATING FUEL FOR A GAS TURBINE - In certain embodiments, a system includes a fuel heater. The fuel heater includes a first heat exchanger configured to receive compressed air from a compressor and to transfer heat from the compressed air to feedwater. The fuel heater also includes a second heat exchanger configured to receive heated feedwater from the first heat exchanger and to transfer heat from the heated feedwater to a fuel. | 11-11-2010 |
20100319359 | SYSTEM AND METHOD FOR HEATING TURBINE FUEL IN A SIMPLE CYCLE PLANT - In certain embodiments, a system includes a fuel heater. The fuel heater includes a first heat exchanger configured to receive compressed air from a compressor and to transfer heat from the compressed air to a cooled intermediate heat transfer media to generate a heated intermediate heat transfer media. The fuel heater also includes a second heat exchanger configured to receive the heated intermediate heat transfer media from the first heat exchanger and to transfer heat from the heated intermediate heat transfer media to a fuel. The first heat exchanger is configured to receive the cooled intermediate heat transfer media from the second heat exchanger. | 12-23-2010 |
20120095701 | SYSTEMS, METHODS, AND APPARATUS FOR DETERMINING ONLINE STRESS AND LIFE CONSUMPTION OF A HEAT RECOVERY STEAM GENERATOR - Certain embodiments of the invention may include systems, methods, and apparatus for determining online stress and life of a heat recovery steam generator. According to an example embodiment of the invention, a method for assessing components of a heat recovery steam generator (HRSG) is provided. The method includes receiving HRSG design parameters; monitoring thermal stress data from one or more temperature sensors in communication with one or more HRSG components; and determining cycle-related life consumption data associated with the one or more HRSG components based at least in part on the HRSG design parameters and the monitored thermal stress data. | 04-19-2012 |
20120290225 | Systems, Methods, and Apparatus for Determining Online Stress and Life Consumption of a Heat Recovery Steam Generator - Certain embodiments of the invention may include systems, methods, and apparatus for determining online stress and life consumption of a heat recovery steam generator (HRSG). According to an example embodiment of the invention, a method for assessing components of a HRSG is provided. The method includes receiving HRSG design parameters; determining thermal stress data associated with the one or more HRSG components based at least in part on one or more historical, real-time, or calculated temperature sensor data associated with the one or more HRSG components; and determining cycle-related life consumption data associated with the one or more HRSG components based at least in part on the HRSG design parameters and the determined thermal stress data. | 11-15-2012 |
20140230402 | TURBINE CONDUIT PURGE SYSTEMS - In one embodiment, a system is provided. The system includes a combustor configured to combust a fuel, and a three-way valve fluidly coupled the combustor and disposed upstream of the combustor. The system also includes a fuel circuit comprising a fuel supply, wherein the fuel circuit is disposed upstream of the three-way valve and is configured to provide the fuel to the three-way valve. The system additionally includes a fuel conduit section fluidly coupling the fuel circuit to the combustor. The system further includes an inert fluid supply configured to provide an inert fluid to the thee-way valve and a compressor discharge (CPD) fluid source configured to provide a purge fluid to the three-way valve. The three-way valve is configured to purge the fuel from a first portion of the fuel conduit section by using the purge fluid. | 08-21-2014 |
Patent application number | Description | Published |
20090210847 | SYNCHRONOUS TO ASYNCHRONOUS LOGIC CONVERSION - Apparatus, systems, and methods may operate to generate a synchronous netlist from a synchronous circuit design representation, automatically substitute asynchronous components taken from an asynchronous standard cell component library for corresponding standard cell synchronous components in the synchronous netlist to form an asynchronous core, and convert the synchronous netlist to an asynchronous circuit design representation. Additional apparatus, systems, and methods are disclosed. | 08-20-2009 |
20100205571 | SYNCHRONOUS TO ASYNCHRONOUS LOGIC CONVERSION - Apparatus, systems, and methods may operate to generate a synchronous netlist from a synchronous circuit design representation, automatically substitute asynchronous components taken from an asynchronous standard cell component library for corresponding standard cell synchronous components in the synchronous netlist to form an asynchronous core, and convert the synchronous netlist to an asynchronous circuit design representation. Additional apparatus, systems, and methods are disclosed. | 08-12-2010 |
Patent application number | Description | Published |
20110215376 | PRE-GATE, SOURCE/DRAIN STRAIN LAYER FORMATION - A method produces a transistor. The method forms a strain-producing layer on a base layer and then removes at least one portion of the strain-producing layer to create at least one opening in the strain-producing layer. This leaves first and second portions of the strain-producing layer on the substrate. The first and second portions of the strain-producing layer comprise source and drain stressor regions of the transistor. The method then grows a channel region in the opening of the strain-producing layer from the base layer, forms a gate insulator on the channel region, and forms a gate conductor on the gate insulator. | 09-08-2011 |
20120181578 | PRE-GATE, SOURCE/DRAIN STRAIN LAYER FORMATION - A method produces a transistor. The method forms a strain-producing layer on a base layer and then removes at least one portion of the strain-producing layer to create at least one opening in the strain-producing layer. This leaves first and second portions of the strain-producing layer on the substrate. The first and second portions of the strain-producing layer comprise source and drain stressor regions of the transistor. The method then grows a channel region in the opening of the strain-producing layer from the base layer, forms a gate insulator on the channel region, and forms a gate conductor on the gate insulator. | 07-19-2012 |
20140213029 | PRE-GATE, SOURCE/DRAIN STRAIN LAYER FORMATION - A method produces a transistor. The method forms a strain-producing layer on a base layer and then removes at least one portion of the strain-producing layer to create at least one opening in the strain-producing layer. This leaves first and second portions of the strain-producing layer on the substrate. The first and second portions of the strain-producing layer comprise source and drain stressor regions of the transistor. The method then grows a channel region in the opening of the strain-producing layer from the base layer, forms a gate insulator on the channel region, and forms a gate conductor on the gate insulator. | 07-31-2014 |
Patent application number | Description | Published |
20080290370 | Semiconductor devices and methods of manufacturing thereof - Semiconductor devices and methods of manufacturing thereof are disclosed. In a preferred embodiment, a method of manufacturing a semiconductor device includes providing a workpiece, and forming a recess in the workpiece. The recess has a depth having a first dimension. A first semiconductive material is formed in the recess to partially fill the recess in a central region to a height having a second dimension. The second dimension is about one-half or greater of the first dimension. A second semiconductive material is formed over the first semiconductive material in the recess to completely fill the recess, the second semiconductive material being different than the first semiconductive material. | 11-27-2008 |
20100009524 | METHOD FOR IMPROVING SEMICONDUCTOR SURFACES - A semiconductor fabrication method. The method includes providing a semiconductor substrate, wherein the semiconductor substrate includes a semiconductor material. Next, a top portion of the semiconductor substrate is removed. Next, a first semiconductor layer is epitaxially grown on the semiconductor substrate, wherein a first atom percent of the semiconductor material in the first semiconductor layer is equal to a certain atom percent of the semiconductor material in the semiconductor substrate. | 01-14-2010 |
20100197100 | Semiconductor Devices and Methods of Manufacturing Thereof - Semiconductor devices and methods of manufacturing thereof are disclosed. In a preferred embodiment, a method of manufacturing a semiconductor device includes providing a workpiece, and forming a recess in the workpiece. The recess has a depth having a first dimension. A first semiconductive material is formed in the recess to partially fill the recess in a central region to a height having a second dimension. The second dimension is about one-half or greater of the first dimension. A second semiconductive material is formed over the first semiconductive material in the recess to completely fill the recess, the second semiconductive material being different than the first semiconductive material. | 08-05-2010 |
20100219485 | FORMATION OF RAISED SOURCE/DRAIN STUCTURES IN NFET WITH EMBEDDED SIGE IN PFET - A structure and method for forming raised source/drain structures in a NFET device and embedded SiGe source/drains in a PFET device. We provide a NFET gate structure over a NFET region in a substrate and PFET gate structure over a PFET region. We provide NFET SDE regions adjacent to the NFET gate and provide PFET SDE regions adjacent to the PFET gate. We form recesses in the PFET region in the substrate adjacent to the PFET second spacers. We form a PFET embedded source/drain stressor in the recesses. We form a NFET S/D epitaxial Si layer over the NFET SDE regions and a PFET S/D epitaxial Si layer over PFET embedded source/drain stressor. The epitaxial Si layer over PFET embedded source/drain stressor is consumed in a subsequent salicide step to form a stable and low resistivity silicide over the PFET embedded source/drain stressor. We perform a NFET S/D implant by implanting N-type ions into NFET region adjacent to the NFET gate structure and into the NFET S/D stressor Si layer to form the raised NFET source/drains. | 09-02-2010 |
20110223737 | IMPLANT DAMAGE CONTROL BY IN-SITU C DOPING DURING SIGE EPITAXY FOR DEVICE APPLICATIONS - Some example embodiments of the invention comprise methods for and semiconductor structures comprised of: a MOS transistor comprised of source/drain regions, a gate dielectric, a gate electrode, channel region; a carbon doped SiGe region that applies a stress on the channel region whereby the carbon doped SiGe region retains stress/strain on the channel region after subsequent heat processing. | 09-15-2011 |
20120001228 | METHOD TO CONTROL SOURCE/DRAIN STRESSOR PROFILES FOR STRESS ENGINEERING - An example embodiment of a strained channel transistor structure comprises the following: a strained channel region comprising a first semiconductor material with a first natural lattice constant; a gate dielectric layer overlying the strained channel region; a gate electrode overlying the gate dielectric layer; and a source region and drain region oppositely adjacent to the strained channel region, one or both of the source region and drain region are comprised of a stressor region comprised of a second semiconductor material with a second natural lattice constant different from the first natural lattice constant; the stressor region has a graded concentration of a dopant impurity and/or of a stress inducing molecule. Another example embodiment is a process to form the graded impurity or stress inducing molecule stressor embedded S/D region, whereby the location/profile of the S/D stressor is not defined by the recess depth/profile. | 01-05-2012 |
20140080275 | Multigate FinFETs with Epitaxially-Grown Merged Source/Drains - Method of forming multi-gate finFETs with epitaxially-grown merged source/drains. Embodiments of the invention may include forming a plurality of semiconductor fins joined by a plurality of inter-fin semiconductor regions, depositing a sacrificial gate over a center portion of each of the plurality of fins, forming a first merge layer over a first end of each of the plurality of fins to form a first merged fin region, forming a second merge layer over the second end of each of the plurality of fins to form a second merged fin region, etching a portion of the first merged fin region to form a first source/drain base region, etching a portion of the second merged fin region to form a second source/drain base region, forming a first source/drain region on the first source/drain base region, and forming a second source/drain region on the second source/drain base region. | 03-20-2014 |
20140159113 | IMPLANT DAMAGE CONTROL BY IN-SITU C DOPING DURING SIGE EPITAXY FOR DEVICE APPLICATIONS - Some example embodiments of the invention comprise methods for and semiconductor structures comprised of: a MOS transistor comprised of source/drain regions, a gate dielectric, a gate electrode, channel region; a carbon doped SiGe region that applies a stress on the channel region whereby the carbon doped SiGe region retains stress/strain on the channel region after subsequent heat processing. | 06-12-2014 |
Patent application number | Description | Published |
20110076664 | Associating Diverse Content - Diverse content items from within a network of federated systems is managed to allow automatic access of related content items from within the network based on access of a first content item. The related content items are ranked according to various criteria for relatedness and/or quality. | 03-31-2011 |
20110117534 | EDUCATION MONITORING - Group-based, periodic education intervention that provides a targeted curriculum selected specifically for each period based on current skill assessment data is described. For example, candidates' skill levels in multiple skills are assessed, and groups are formed based on commonality of skill level. A period-specific curriculum is generated for each group to address the specific needs of the individuals of the respective group. After delivery of the period-specific targeted curriculum over the period, re-assessments of the current skill of the group members are made, and a period-specific curriculum for the subsequent period is generated and delivered. Fidelity of an implementation of the curriculum is analyzed, and alerts, reminders, and reports are provided to improve fidelity of an implementation of the curriculum. | 05-19-2011 |
20140134591 | EDUCATION MONITORING - Group-based, periodic education intervention that provides a targeted curriculum selected specifically for each period based on current skill assessment data is described. For example, candidates' skill levels in multiple skills are assessed, and groups are formed based on commonality of skill level. A period-specific curriculum is generated for each group to address the specific needs of the individuals of the respective group. After delivery of the period-specific targeted curriculum over the period, re-assessments of the current skill of the group members are made, and a period-specific curriculum for the subsequent period is generated and delivered. Fidelity of an implementation of the curriculum is analyzed, and alerts, reminders, and reports are provided to improve fidelity of an implementation of the curriculum. | 05-15-2014 |