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| 20090298095 | Immortalization of cells including neuronal cells - The instant invention provides methods for immortalizing cells. The invention further provides immortalized cell lines, e.g., neuronal cell lines, and methods of using these cell lines in screening assays. | 12-03-2009 |
| 20100303881 | Therapeutic Electrospun Fiber Compositions - The instant invention provides electrospun fiber compositions comprising one or more polymers and one or more biologically active agents. In specific embodiments, the biologically active agents are nerve growth factors. In certain embodiments, the electrospun fiber compositions comprising one or more biologically active agents are on the surface of a film, or a tube. The tubes comprising the electrospun fiber compositions of the invention can be used, for example, as nerve guide conduits. | 12-02-2010 |
| 20110125170 | HYDROGEL-GRAFTED DEGRADABLE NERVE GUIDES - The present invention is directed to the compositions and methods of preparing hydrogel-grafted nerve guides for peripheral nerve regeneration. Particularly, the present invention describes the nerve guides and methods for preparation of hydrogel-grafted nerve guides with encapsulated neurotrophic factors and a nanofiber mesh lining the inner surface of the guide. The present invention also provides methods for peripheral nerve repair using these hydrogel-grafted nerve guides. | 05-26-2011 |
| 20120059399 | BIOLOGICAL TISSUE CONNECTION AND REPAIR DEVICES AND METHODS OF USING SAME - The instant invention provides compositions and methods for promoting the repair and/or growth of biological tissue, e.g., tubular biological tissue such as nerves. Specifically, the instant invention provides tissue connection devices and tissue repair devices and methods for using these devices. | 03-08-2012 |
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| 20080215294 | System for Assured Reliability in DC to AC Power Converters - In accordance with the invention, a system for assured reliability in DC to AC power converters with application to distributed power generation systems is presented. Reliability limiting components of the DC to AC power converters are monitored and the monitored data is used to drive servicing decisions | 09-04-2008 |
| 20100066680 | METHODS AND SYSTEMS FOR MEASURING SPECKLE TRANSLATION WITH SPATIAL FILTERS - Two or more spatial filters are used in determining velocity based on speckle translation. A light source may be turned on, turned off, or both for a variable amount of time during operation. The velocity may then be determined with trend identification, correlation, recursive frequency estimation, or measurement bandwidth variation. A confidence level may also be calculated for the measured velocity, and the measured velocity reported or used only when the calculated confidence level meets or exceeds a given value. | 03-18-2010 |
| 20100224231 | Photovoltaic Module Utilizing Beam Steering and a Fixed Concentrator - A solar power apparatus and method for fabricating the same are disclosed. The apparatus includes a beam steering assembly, a plurality of converts, and a controller. The beam steering assembly directs light traveling in a first direction to light traveling in a second direction. Each converter is fixed with respect to a substrate, and each converter includes a light concentrator and a receiver. The controller determines the position of the sun relative to the beam steering assembly and controls the beam steering assembly such that the concentrators receive sunlight from that determined direction. Each light concentrator is fixed relative to the light receiver that receives light from that light concentrator. The beam steering assembly elements can be fabricated by molding or by embossing of thin plastic sheets. | 09-09-2010 |
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| 20090293488 | Combustor - A gas turbine engine combustor has forward bulkhead extending between inboard and outboard walls and cooperating therewith to define a combustor interior volume or combustion chamber. At least one of the walls has an exterior shell and an interior shell including a number of panels. Each panel has interior and exterior surfaces and a perimeter having leading and trailing edges and first and second lateral edges. A number of cooling passageways have inlets on the panel exterior surface and outlets on the panel interior surface. The shell has a plurality of holes for directing air to a space between the shell and heat shield and adapted for preferentially directing said air toward leading edge portions of first stage vanes of a turbine section. | 12-03-2009 |
| 20110052381 | COMBUSTOR TURBINE INTERFACE FOR A GAS TURBINE ENGINE - A turbine vane downstream of a combustor section includes an arcuate outer vane platform defined about an axis, the arcuate outer vane platform includes a segment of the arcuate outer vane platform along the axis which follows an outer combustor liner panel structure and an arcuate inner vane platform defined about the axis, the arcuate inner vane platform includes a segment of the arcuate inner vane platform along the axis which follows an inner combustor liner panel structure. | 03-03-2011 |
| 20110120134 | GAS TURBINE COMBUSTOR - An annular combustor for a gas turbine has a combustion chamber having an interior volume that, in longitudinal section, includes a forward volume, an intermediate volume and an aft volume. The forward volume represents from about 30% to about 40% of the combustor interior volume, the intermediate volume represents from about 10% to about 20% of the combustor interior volume, and the aft volume represents from about 40% to about 60% of the combustor interior volume. | 05-26-2011 |
| 20110126543 | COMBUSTOR PANEL ARRANGEMENT - A combustor module for a gas turbine engine is provided that includes a first annular liner assembly extending along a longitudinal axis of the engine. The first annular liner assembly includes a first annular support shell and a plurality of first heat shield panels coupled to the first annular support shell. The first heat shield panels form a segmented ring defining a plurality of first axial seams therebetween. The combustor module further includes a bulkhead coupled to the first annular liner assembly. The bulkhead provides a plurality of fuel nozzles for passing a first mass flow comprising fuel and air. The combustor module further includes a second annular liner assembly coupled to the bulkhead. The second annular liner assembly is in spaced-apart generally coaxial relationship from the first annular liner assembly by a channel height H. The second annular liner assembly includes an air admittance hole having a mean diameter D extending along a hole axis. The hole axis is offset from the first axial seam defined by the first heat shield panels. | 06-02-2011 |
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| 20080221507 | Systems and Methods for Nasal Irrigation - Systems and methods for nasal irrigation are provided in which a nasal irrigation device includes a source of saline solution, an effluent receptacle, a nasal interface, a vacuum source, a fluid passageway to communicate the source of saline solution with the effluent receptacle through the nasal interface and a nasal cavity of the user, and a switch and valve assembly for selectively controlling the vacuum source and flow of the saline solution through the fluid passageway. The saline solution source bottle is disposed relative to the device to provide gravitational inducement of saline solution to the nasal interface in engagement to the device user's nostrils. A combination of the gravitational inducement and the relative vacuum from an effluent receptacle generates a fluid flow for irrigating, cleansing and massaging the nasal cavity and ostia of a user. The entire device is assembled as a hand-held device for convenient lifting and disposal against the user's nostrils. | 09-11-2008 |
| 20100152653 | Systems and methods for nasal lavage - A nasal lavage device includes a source of saline solution, an effluent receptacle, and a nasal interface for engaging the nostrils of a user of the device. A fluid passageway is disposed to communicate the source of saline solution with the effluent receptacle through the nasal cavity of the user. The nasal interface and fluid passageways are included within a removable cartridge for communicating the saline relative to the nostrils in a first direction. A second cartridge can be inserted to communicate the flow in a second direction. The interface includes nasal pillows that form a seal against the user's nostrils. | 06-17-2010 |
| 20110288476 | Systems and methods for nasal lavage - A nasal lavage device includes a source of saline solution, an effluent receptacle, and a nasal interface for engaging the nostrils of a user of the device. A fluid passageway is disposed to communicate the source of saline solution with the effluent receptacle through the nasal cavity of the user. The nasal interface and fluid passageways are included within a removable cartridge for communicating the saline relative to the nostrils in a first direction. A second cartridge can be inserted to communicate the flow in a second direction. The interface includes nasal pillows that form a seal against the user's nostrils. | 11-24-2011 |
| 20120078166 | Systems and methods for nasal irrigation - Systems and methods for nasal irrigation are provided in which a nasal irrigation device includes a source of saline, an effluent receptacle, a nasal interface, a vacuum source, a fluid passageway to communicate the source of saline with the effluent receptacle through the nasal interface and a nasal cavity of the user, and a switch and valve assembly for selectively controlling the vacuum source and flow of the saline solution through the fluid passageway. The saline source is disposed relative to the device to provide gravitational inducement of saline to the nasal interface in engagement to the device user's nostrils. A combination of the gravitational inducement and the relative vacuum from the effluent receptacle generates a fluid flow for irrigating, cleansing and massaging the nasal cavity and ostia of a user. The entire device is assembled as a hand-held device for convenient lifting and disposal against the user's nostrils. | 03-29-2012 |
| 20120078173 | Systems and methods for nasal irrigation - Systems and methods for nasal irrigation are provided in which a nasal irrigation device includes a source of saline, an effluent receptacle, a nasal interface, a vacuum source, a fluid passageway to communicate the source of saline with the effluent receptacle through the nasal interface and a nasal cavity of the user, and a switch and valve assembly for selectively controlling the vacuum source and flow of the saline solution through the fluid passageway. The saline source is disposed relative to the device to provide gravitational inducement of saline to the nasal interface in engagement to the device user's nostrils. A combination of the gravitational inducement and the relative vacuum from the effluent receptacle generates a fluid flow for irrigating, cleansing and massaging the nasal cavity and ostia of a user. The entire device is assembled as a hand-held device for convenient lifting and disposal against the user's nostrils. | 03-29-2012 |
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| 20080258135 | SEMICONDUCTOR STRUCTURE HAVING PLURAL BACK-BARRIER LAYERS FOR IMPROVED CARRIER CONFINEMENT - A semiconductor structure having: a channel layer having a conductive channel therein; a pair of polarization generating layers; a spacer layer disposed between the pair of polarization generating layers. The polarization generating layers create polarization fields along a common, predetermined direction. Each one of the pair of polarizations layers may be InGaN; InAlGaN; or quaternary In | 10-23-2008 |
| 20100090228 | BORON ALUMINUM NITRIDE DIAMOND HETEROSTRUCTURE - A heterostructure having a heterojunction comprising: a diamond layer; and a boron aluminum nitride (B | 04-15-2010 |
| 20100320474 | GALLIUM NITRIDE FOR LIQUID CRYSTAL ELECTRODES - Described herein is a liquid crystal (LC) device having Gallium Nitride HEMT electrodes. The Gallium Nitride HEMT electrodes can be grown on a variety of substrates, including but not limited to sapphire, silicon carbide, silicon, fused silica (using a calcium fluoride buffer layer), and spinel. Also described is a structure provided from GaN HEMT grown on large area silicon substrates and transferred to another substrate with appropriate properties for OPA devices. Such substrates include, but are not limited to sapphire, silicon carbide, silicon, fused silica (using a calcium fluoride buffer layer), and spinel. The GaN HEMT structure includes an AlN interlayer for improving the mobility of the structure. | 12-23-2010 |
| 20110049581 | SEMICONDUCTOR STRUCTURE AND METHOD - A method for forming a structure on a surface of a semiconductor. The method includes: forming the material as a lower layer of the structure using a first deposition process to provide the lower layer with a first etch rate to a predetermined etchant; forming the upper layer of the structure with the material on the lower using a second deposition process to provide the upper layer with a second etch rate to the predetermined etchant higher than the first etch rate; and applying the predetermined etchant to upper layer to selectively remove the upper while leaving the lower layer. | 03-03-2011 |
| 20110180857 | STRUCTURE HAVING SILICON CMOS TRANSISTORS WITH COLUMN III-V TRANSISTORS ON A COMMON SUBSTRATE - A semiconductor structure having: a silicon substrate having a crystallographic orientation; an insulating layer disposed over the silicon substrate; a silicon layer having a different crystallographic orientation than the crystallographic orientation of the substrate disposed over the insulating layer; and a column III-V transistor device having the same crystallographic orientation as the substrate disposed on the silicon substrate. In one embodiment, the column III-V transistor device is in contact with the substrate. In one embodiment, the device is a GaN device. In one embodiment, the crystallographic orientation of the substrate is <111> and wherein the crystallographic orientation of the silicon layer is <100>. In one embodiment, CMOS transistors are disposed in the silicon layer. In one embodiment, the column III-V transistor device is a column III-N device. In one embodiment, a column III-As, III-P, or III-Sb device is disposed on the top of the <100> silicon layer. | 07-28-2011 |
