| Patent application number | Description | Published |
|---|
| 20080203394 | Method for fabrication of active-matrix display panels - The present invention provides a method of an active-matrix thin film transistor array, comprising of two levels of metallic interconnections formed from one layer of metallic conductor; and thin-film transistors with source, drain and gate electrodes either fully or partially replaced with metal, and wherein the pixel electrodes are polycrystalline silicon. | 08-28-2008 |
| 20080204620 | Transflective Liquid Crystal Device and Method of Manufacturing the Same - The construction of electrodes for liquid-crystal displays using larger grain lower absorption (LGLA) poly-Si showing an absorptivity below 20% in the visible light region is described. Integration in the manufacturing of substrates for active-matrix LCDs is shown. Source, drain and channel region ( | 08-28-2008 |
| 20080218469 | TRANSIENT LIQUID CRYSTAL ARCHITECTURE - Methods and systems for displaying videos with high contrast using fast transient response of liquid crystal materials are disclosed. The system comprises a liquid crystal material treated with a chiral dopant, which is aligned between two substrates with conductive layer on each substrate. The system can be operated in an active or passive matrix mode display. The active matrix display can be a thin film transistor (TFT) or MOS transistor, whereas no transistors are used for the passive matrix mode display. A full color display, with high contrast, can be achieved by illuminating the transient liquid crystal material with a pulsed backlight. | 09-11-2008 |
| 20090134790 | POLYCRYSTALLINE SILICON AS AN ELECTRODE FOR A LIGHT EMITTING DIODE & METHOD OF MAKING THE SAME - Metal induced polycrystallized silicon is used as the anode in a light emitting device, such as an OLED or AMOLED. The polycrystallized silicon is sufficiently non-absorptive, transparent and made sufficiently conductive for this purpose. A thin film transistor can be formed onto the polycrystallized silicon anode, with the silicon anode acting as the drain of the thin film transistor, thereby simplifying production. | 05-28-2009 |
| 20090147187 | TRANSFLECTIVE LIQUID CRYSTAL DISPLAY - Pixels of an LCD are divided into two sub-pixels, one for a reflective mode and one for a transmittive mode. The cell gaps of both sub-pixels are the same, improving fabrication ease. A novel photoalignment technique is used together with a shadow mask in an embodiment of the invention. Double exposure of the alignment layer with different orientations produces different alignment directions, thereby achieving the different LCD modes for the sub-pixels. | 06-11-2009 |
| 20090279032 | METHOD TO OBTAIN A CONTROLLED PRETILT AND AZIMUTHAL ANGLES IN A LIQUID CRYSTAL CELL - We disclose a new method of preparing liquid crystal alignment layers that can produce controllable pretilt angles from near 0 to near 90°. It is based on the stacking of two alignment materials sequentially, with the first one being continuous and the second one being discontinuous leaving part of the first layer exposed. | 11-12-2009 |
| 20100071760 | ULTRATHIN FILM MULTI-CRYSTALLINE PHOTOVOLTAIC DEVICE - A solar cell photovoltaic device using ultrathin films of polycrystalline silicon and deep uneven surface structures is disclosed. According to one embodiment, the uneven structures include one or more pits having a depth of at least 10 microns. According to another embodiment, the uneven structures include one or more cones or columns having a height or at least 10 microns. Because the unevenness of the structures, the photovoltaic device is able to use a very thin layer of polycrystalline silicon to effectively trap and absorb light. | 03-25-2010 |
| 20100171546 | Polycrystalline silicon thin film transistors with bridged-grain structures - A low temperature polycrystalline silicon device and techniques to manufacture thereof with excellent performance. Employing doped poly-Si lines which we called a bridged-grain structure (BG), the intrinsic or lightly doped channel is separated into multiple regions. A single gate covering the entire active channel including the doped lines is still used to control the current flow. Using this BG poly-Si as an active layer and making sure the TFT is designed so that the current flows perpendicularly to the parallel lines of grains, grain boundary effects can be reduced. Reliability, uniformity and the electrical performance of the BG poly-Si TFT are significantly improved compared with the conventional low temperature poly-Si TFT. | 07-08-2010 |
| 20110043717 | Low voltage liquid crystal lens with variable focal length - Disclosed herein is a liquid crystal lens with a variable focal length. The gradient profile of the liquid crystals molecules that causes the gradient profile of the refractive index is achieved by inducing non-uniformly distributed anchoring energy and an external electric or magnetic field applied to the liquid crystal layer. Unlike existing electrically controlled liquid crystal lens, the external electric or magnetic field has a uniform spatial distribution within the liquid crystal layer. The focal length of the liquid crystal lens is controlled via the non-uniformly distributed anchoring energy and by varying the uniformly distributed electric or magnetic field. | 02-24-2011 |
| 20110159610 | Polycrystalline silicon as an electrode for a light emitting diode and method of making the same - Metal induced polycrystallized silicon is used as the anode in a light emitting device, such as an OLED or AMOLED. The polycrystallized silicon is sufficiently non-absorptive, transparent and made sufficiently conductive for this purpose. A thin film transistor can be formed onto the polycrystallized silicon anode, with the silicon anode acting as the drain of the thin film transistor, thereby simplifying production. | 06-30-2011 |
