Patent application number | Description | Published |
20120073607 | POLYMERIC OR MONOMERIC COMPOSITIONS COMPRISING AT LEAST ONE MONO-AMIDE AND/OR AT LEAST ONE DIAMIDE FOR REMOVING SUBSTANCES FROM SUBSTRATES AND METHODS FOR USING THE SAME - Compositions and methods useful for removing organic substances from substrates, for example, electronic device substrates such as microelectronic wafers or flat panel displays, are provided. Methods are presented that apply a minimum volume of a composition as a coating to the inorganic substrate whereby sufficient heat is added and immediately rinsed with water to achieve complete removal. The compositions and methods may be suitable for removing and completely dissolving photoresists of the positive and negative varieties as well as thermoset polymers from electronic devices. | 03-29-2012 |
20120077132 | PROCESSESS AND COMPOSITIONS FOR REMOVING SUBSTANCES FROM SUBSTRATES - Processes associated apparatus and compositions useful for removing organic substances from substrates, for example, electronic device substrates such as microelectronic wafers or flat panel displays, are provided. Processes are presented that apply a minimum volume of a composition as a coating to the inorganic substrate whereby sufficient heat is added and the organic substances are completely removed by rinsing. The compositions and processes may be suitable for removing and, in some instances, completely dissolving photoresists of the positive and negative varieties as well as thermoset polymers from electronic devices. | 03-29-2012 |
20120271028 | RESOL BEADS, METHODS OF MAKING THEM, AND METHODS OF USING THEM - Resol beads are disclosed that are prepared in high yield by reaction of a phenol with an aldehyde, with a base as catalyst, a colloidal stabilizer, and optionally a surfactant. The resol beads have a variety of uses, and may be thermally treated and carbonized to obtain activated carbon beads. | 10-25-2012 |
20130116159 | PHOTORESIST AND POST ETCH RESIDUE CLEANING SOLUTION - A photoresist and post etch cleaning solution for semiconductor wafers comprising:
| 05-09-2013 |
20130273479 | PROCESSESS AND COMPOSITIONS FOR REMOVING SUBSTANCES FROM SUBSTRATES - Processes associated apparatus and compositions useful for removing organic substances from substrates, for example, electronic device substrates such as microelectronic wafers or flat panel displays, are provided. Processes are presented that apply a minimum volume of a composition as a coating to the inorganic substrate whereby sufficient heat is added and the organic substances are completely removed by rinsing. The compositions and processes may be suitable for removing and, in some instances, completely dissolving photoresists of the positive and negative varieties as well as thermoset polymers from electronic devices. | 10-17-2013 |
20140069458 | PROCESSES AND COMPOSITIONS FOR REMOVING SUBSTANCES FROM SUBSTRATES - Processes associated apparatus and compositions useful for removing organic substances from substrates, for example, electronic device substrates such as microelectronic wafers or flat panel displays, are provided. Processes are presented that apply a minimum volume of a composition as a coating to the inorganic substrate whereby sufficient heat is added and the organic substances are completely removed by rinsing. The compositions and processes may be suitable for removing and, in some instances, completely dissolving photoresists of the positive and negative varieties as well as thermoset polymers from electronic devices. | 03-13-2014 |
20140124896 | FORMULATIONS OF SOLUTIONS AND PROCESSES FOR FORMING A SUBSTRATE INCLUDING AN ARSENIC DOPANT - Formulations of solutions and processes are described to form a substrate including a dopant. In particular implementations, the dopant may include arsenic (As). In an embodiment, a dopant solution is provided that includes a solvent and a dopant. In a particular embodiment, the dopant solution may have a flashpoint that is at least approximately equal to a minimum temperature capable of causing atoms at a surface of the substrate to attach to an arsenic-containing compound of the dopant solution. In one embodiment, a number of silicon atoms at a surface of the substrate are covalently bonded to the arsenic-containing compound. | 05-08-2014 |
20140137894 | PROCESS FOR REMOVING SUBSTANCES FROM SUBSTRATES - A process is described that is useful for removing organic substances from substrates, for example, electronic device substrates such as microelectronic wafers or flat panel displays. A process is presented for applying a minimum volume of a chemical stripping composition as a coating to the inorganic substrate whereby sufficient heat is added and the organic substances are completely removed by rinsing. The process may be suitable for removing and, in some instances, completely dissolving photoresists of the positive and negative varieties, and especially negative dry film photoresist from electronic devices. | 05-22-2014 |
20140137899 | PROCESS FOR REMOVING SUBSTANCES FROM SUBSTRATES - Processes are described to remove substances from substrates. In an embodiment, a process may include providing a substrate including a first side and a second side with a substance being disposed on at least a portion of the first side of the substrate. The process may also include contacting the substrate with a solution such that the first side of the substrate is coated with the solution, at least a portion of the second side is free of the solution and at least a portion of the substance is released from the first side of the substrate. Additionally, the process may include rinsing the substrate to remove at least a portion of the substance released from the first side of the substrate. | 05-22-2014 |
20140141622 | PROCESS FOR ETCHING METALS - Processes are described to etch metals. In an embodiment, a process may include contacting a substrate with a stripping solution to remove photoresist from the substrate to produce a stripped substrate. The stripped substrate may include a plurality of solder pillars and a plurality of metal-containing field regions disposed around the plurality of solder pillars. In an illustrative embodiment, the plurality field regions may include copper. Additionally, the process may include rinsing the stripped substrate to produce a rinsed substrate. The rinsed substrate may be substantially free of a Sn layer or a Sn oxide layer. Further, the process may include contacting the rinsed substrate with an etch solution that is capable of removing an amount of one or more metals from the plurality of field regions. | 05-22-2014 |
20140142017 | Process And Composition For Removing Substances From Substrates - Compositions are described that are useful for removing organic and organometallic substances from substrates, for example, photoresist wafers. Processes are presented that apply a minimum volume of a composition as a coating to the inorganic substrate whereby sufficient heat is added and the organic or organometallic substances are completely removed by rinsing. The compositions and processes may be suitable for removing and, in some instances, completely dissolving photoresists of the positive and negative varieties, and specifically negative dry film photoresist from electronic devices. | 05-22-2014 |
20150133356 | PHOTORESIST AND POST ETCH RESIDUE CLEANING SOLUTION - A process for cleaning a semi-conductor wafer comprising providing etched wafer containing metal pillars, contacting the etched wafer with a cleaning solution, removing the wafer from the cleaning solution, wherein the resulting wafer is substantially free of post etch residues and photoresist residues without etching the metal pillars by the cleaning solution, the cleaning solution comprising:
| 05-14-2015 |