| Patent application number | Description | Published |
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| 20090001180 | THERMOSTAT WITH UTILITY MESSAGING - The present disclosure pertains generally to thermostats that are adapted to assist utilities in communicating with its customers. In particular, the present disclosure relates to a thermostat having a display, a controller and a receiver that is coupled to the controller. The receiver is adapted to receive messages from a utility, and the controller is adapted to display one or more related display messages on the display. | 01-01-2009 |
| 20090001181 | THERMOSTAT WITH USAGE HISTORY - The present disclosure pertains to thermostats that assist users in monitoring and/or controlling their utility consumption habits and patterns. In particular, the present disclosure relates to a thermostat that includes a housing and a controller located within the housing. The controller may be adapted to implement a control algorithm that permits the controller to operate one or more components of an HVAC system. The thermostat may include a display and a receiver that is configured to receive messages from a utility. In some cases, the controller may provide, on the display, an indication of a measure of utility usage during a first time period (e.g. during a current month) and an indication of a measure of utility usage during a second time period (e.g. during the same month one year ago) that may be after the first time period. | 01-01-2009 |
| 20090001182 | THERMOSTAT WITH FIXED SEGMENT DISPLAY HAVING BOTH FIXED SEGMENT ICONS AND A VARIABLE TEXT DISPLAY CAPACITY - The disclosure pertains to thermostats having an improved interface. In some cases, the present disclosure relates to thermostats that can display not only menu items, temperature set points and the like, but also has an ability to display variable textual information that is not predefined at the time of manufacture of the display. The thermostat may include an LCD display that is viewable from outside of the thermostat housing and that includes a first region and a second region. The first display region may include an array of fixed segment pixels that are arranged into a plurality of rows and a plurality of columns for displaying text in a dot matrix format. In some cases, the first region may be adapted to display messages, including scrolling messages. The second region may include a plurality of fixed segment graphical icons, which may be more precisely and more clearly displayed than if displayed using the array of fixed segment pixels of the first region. | 01-01-2009 |
| 20110199209 | THERMOSTAT WITH UTILITY MESSAGING - The present disclosure pertains generally to thermostats that are adapted to assist utilities in communicating with its customers. In particular, the present disclosure relates to a thermostat having a display, a controller and a receiver that is coupled to the controller. The receiver is adapted to receive messages from a utility, and the controller is adapted to display one or more related display messages on the display. | 08-18-2011 |
| Patent application number | Description | Published |
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| 20090146186 | Gate after Diamond Transistor - A gate after diamond transistor and method of making comprising the steps of depositing a first dielectric layer on a semiconductor substrate, depositing a diamond particle nucleation layer on the first dielectric layer, growing a diamond thin film layer on the first dielectric layer, defining an opening for the gate in the diamond thin film layer, patterning of the diamond thin film layer for a gate metal to first dielectric layer surface, etching the first dielectric layer, depositing and defining a gate metal, and forming a contact window opening in the diamond thin film layer and the first dielectric layer to the ohmic contact. | 06-11-2009 |
| 20110297958 | Gate after Diamond Transistor - A gate after diamond transistor and method of making comprising the steps of depositing a first dielectric layer on a semiconductor substrate, depositing a diamond particle nucleation layer on the first dielectric layer, growing a diamond thin film layer on the first dielectric layer, defining an opening for the gate in the diamond thin film layer, patterning of the diamond thin film layer for a gate metal to first dielectric layer surface, etching the first dielectric layer, depositing and defining a gate metal, and forming a contact window opening in the diamond thin film layer and the first dielectric layer to the ohmic contact. | 12-08-2011 |
| Patent application number | Description | Published |
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| 20090090918 | TRANSPARENT NANOCRYSTALLINE DIAMOND CONTACTS TO WIDE BANDGAP SEMICONDUCTOR DEVICES - A heterojunction between thin films of NCD and 4H—SiC was developed. Undoped and B-doped NCDs were deposited on both n− and p− SiC epilayers. I-V measurements on p+ NCD/n− SiC indicated Schottky rectifying behavior with a turn-on voltage of around 0.2 V. The current increased over eight orders of magnitude with an ideality factor of 1.17 at 30° C. Ideal energy-band diagrams suggested a possible conduction mechanism for electron transport from the SiC conduction band to either the valence band or acceptor level of the NCD film. | 04-09-2009 |
| 20090273390 | METHOD OF MEDIATING FORWARD VOLTAGE DRIFT IN A SIC DEVICE - A method of reversing Shockley stacking fault expansion includes providing a bipolar or a unipolar SiC device exhibiting forward voltage drift caused by Shockley stacking fault nucleation and expansion. The SiC device is heated to a temperature above 150° C. A current is passed via forward bias operation through the SiC device sufficient to induce at least a partial recovery of the forward bias drift. | 11-05-2009 |
| 20100055882 | Junction Termination Extension with Controllable Doping Profile and Controllable Width for High-Voltage Electronic Devices - Methods for producing a junction termination extension surrounding the edge of a cathode or anode junction in a semiconductor substrate, where the junction termination extension has a controlled arbitrary lateral doping profile and a controlled arbitrary lateral width, are provided. A photosensitive material is illuminated through a photomask having a pattern of opaque and clear spaces therein, the photomask being separated from the photosensitive material so that the light diffuses before striking the photosensitive material. After processing, the photosensitive material so exposed produces a laterally tapered implant mask. Dopants are introduced into the semiconductor material and follow a shape of the laterally tapered implant mask to create a controlled arbitrary lateral doping profile and a controlled lateral width in the junction termination extension in the semiconductor. | 03-04-2010 |
| 20100213380 | Neutron Detector with Gamma Ray Isolation - A silicon-on-insulator (SOI) neutron detector comprising a silicon-on-insulator structure, wherein the silicon-on-insulator structure consists of an active semiconductor layer, a buried layer, and a handle substrate, a lateral carrier transport and collection detector structure within the active semiconductor layer of the silicon-on-insulator structure, and a neutron to high energy particle converter layer on the active semiconductor layer. | 08-26-2010 |
| 20100327322 | Transistor with Enhanced Channel Charge Inducing Material Layer and Threshold Voltage Control - High electron mobility transistors and fabrication processes are presented in which a barrier material layer of uniform thickness is provided for threshold voltage control under an enhanced channel charge inducing material layer (ECCIML) in source and drain regions with the ECCIML layer removed in the gate region. | 12-30-2010 |
| 20110048625 | METHOD FOR THE REDUCTION OF GRAPHENE FILM THICKNESS AND THE REMOVAL AND TRANSFER OF EPITAXIAL GRAPHENE FILMS FROM SiC SUBSTRATES - A method for reducing graphene film thickness on a donor substrate and transferring graphene films from a donor substrate to a handle substrate includes applying a bonding material to the graphene on the donor substrate, releasing the bonding material from the donor substrate thereby leaving graphene on the bonding material, applying the bonding material with graphene onto the handle substrate, and releasing the bonding material from the handle substrate thereby leaving the graphene on the handle substrate. The donor substrate may comprise SiC, metal foil or other graphene growth substrate, and the handle substrate may comprise a semiconductor or insulator crystal, semiconductor device, epitaxial layer, flexible substrate, metal film, or organic device. | 03-03-2011 |
| 20110127527 | Neutron Detector with Gamma Ray Isolation - A silicon-on-insulator (SOI) neutron detector comprising a silicon-on-insulator structure, wherein the silicon-on-insulator structure consists of an active semiconductor layer, a buried layer, and a handle substrate, a lateral carrier transport and collection detector structure within the active semiconductor layer of the silicon-on-insulator structure, and a neutron to high energy particle converter layer on the active semiconductor layer. | 06-02-2011 |
