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| 20090090395 | METHOD OF REMOVING PARTICLES FROM WAFER - A method of removing particles from a wafer is provided. The method is adopted after a process for removing unreactive metal of a salicide process or after a salicide process and having oxide residue remaining on a wafer or after a chemical vapor deposition (CVD) process that resulted with particles on a wafer. The method includes performing at least two cycles (stages) of intermediate rinse process. Each cycle of the intermediate rinse process includes conducting a procedure of rotating the wafer at a high speed first, and then conducting a procedure of rotating the wafer at a low speed. | 04-09-2009 |
| 20090155999 | METHOD FOR FABRICATING METAL SILICIDE - A method for fabricating a metal silicide film is described. After providing a silicon material layer, a metal alloy layer is formed to cover the silicon material layer. A thermal process is performed to form a metal alloy silicide layer in a self-aligned way. A wet etching process is performed by using a cleaning solution including sulfuric acid and hydrogen peroxide to remove the residual metals and unreacted metal alloy. | 06-18-2009 |
| 20090191714 | Method of removing oxides - The present invention provides a method of removing oxides. First, a substrate having the oxides is loaded into a reaction chamber, which includes a susceptor setting in the bottom portion of the chamber, a shower head setting above the susceptor, and a heater setting above the susceptor. Subsequently, an etching process is performed. A first thermal treatment process is then carried out. Finally, a second thermal treatment process is carried out, and a reaction temperature of the second thermal treatment process is higher than a reaction temperature of the first thermal treatment process. | 07-30-2009 |
| 20100035401 | METHOD FOR FABRICATING MOS TRANSISTORS - A method for fabricating metal-oxide transistors is disclosed. First, a semiconductor substrate having a gate structure is provided, in which the gate structure includes a gate dielectric layer and a gate. A source/drain region is formed in the semiconductor substrate, and a cleaning step is performed to fully remove native oxides from the surface of the semiconductor substrate. An oxidation process is conducted to form an oxide layer on the semiconductor substrate and the oxide layer is then treated with fluorine-containing plasma to form a fluorine-containing layer on the surface of the semiconductor substrate. A metal layer is deposited on the semiconductor substrate thereafter and a thermal treatment is performed to transform the metal layer into a silicide layer. | 02-11-2010 |
| 20110127589 | SEMICONDUCTOR STRUCTURE HAIVNG A METAL GATE AND METHOD OF FORMING THE SAME - A method of forming a semiconductor structure having a metal gate. Firstly, a semiconductor substrate is provided. Subsequently, at least a gate structure is formed on the semiconductor substrate. Afterwards, a spacer structure is formed to surround the gate structure. Then, an interlayer dielectric is formed. Afterwards, a planarization process is performed for the interlayer dielectric. Then, a portion of the sacrificial layer is removed to form an initial etching depth, such that an opening is formed to expose a portion of the spacer structure. The portion of the spacer structure exposed to the opening is removed so as to broaden the opening. Afterwards, remove the sacrificial layer completely via the opening. Finally, a gate conductive layer is formed to fill the opening. | 06-02-2011 |
| 20110140207 | METAL GATE STRUCTURE AND METHOD OF FORMING THE SAME - The metal gate structure of the present invention can include a TiN complex, and the N/Ti proportion of the TiN complex is decreased from bottom to top. In one embodiment, the TiN complex can include a single TiN layer, which has an N/Ti proportion gradually decreasing from bottom to top. In another embodiment, the TiN complex can include a plurality of TiN layers stacking together. In such a case, the lowest TiN layer has a higher N/Ti proportion than the adjusted TiN layer. | 06-16-2011 |
| 20110266596 | Semiconductor device and method of making the same - In a method of the present invention during a salicide process, before a second thermal process, a dopant is implanted at a place located in a region ranging from a Ni | 11-03-2011 |
| 20120088345 | METHOD OF FORMING SILICIDE FOR CONTACT PLUGS - A method for forming silicide is provided. First, a substrate is provided. Second, a gate structure is formed on the substrate which includes a silicon layer, a gate dielectric layer and at least one spacer. Then, a pair of source and drain is formed in the substrate and adjacent to the gate structure. Later, an interlayer dielectric layer is formed to cover the gate structure, the source and the drain. Afterwards, the interlayer dielectric layer is selectively removed to expose the gate structure. Next, multiple contact holes are formed in the interlayer dielectric layer to expose part of the substrate. Afterwards, the exposed substrate is converted to form silicide. | 04-12-2012 |
| 20120122288 | METHOD OF FABRICATING A SILICIDE LAYER - During a salicide process, and before a second thermal treatment is performed to a silicide layer of a semiconductor substrate, a thermal conductive layer is formed to cover the silicide layer. The heat provided by the second thermal treatment can be conducted to the silicide layer uniformly through the thermal conductive layer. The thermal conductive layer can be a CESL layer, TiN, or amorphous carbon. Based on different process requirements, the thermal conductive layer can be removed optionally after the second thermal treatment is finished. | 05-17-2012 |
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| 20090288613 | Pet Cage Assembly - A pet cage assembly comprises two lateral panels, a front panel, a rear panel, a bottom panel and a top panel. Each of the lateral panels comprises an upper and a lower sub-panel, each formed with fasteners extending inwards from two ends thereof for engaging with cavities formed on corresponding edges of the front and rear panels. Each of the lower sub-panels is formed with an extended, engaging portion adjacent to a section thereof to which the front panel is assembled, so that the front panel can be retained bilaterally by the engaging portions. The lateral, front and rear panels are fastened to a bottom side of the top panel, which is formed with an opening for receiving an upper door resiliently engaged therein. The rear panel comprises a frame pivotally attached by a rear door, which is resiliently engaged at an edge thereof with the frame. | 11-26-2009 |
| 20100024735 | Structure of Feeder for Supplying Water and Pet Food - An improved structure of a feeder for supplying water and pet food is disclosed. Therein, a base has a shifting space adjacent to a side of a bowl settled in the base so as to receive a dispensing controller. A container unit equipped with a hopper and a water supplier is provided on top of the dispending controller. The dispensing controller can be shifted in the shifting space so that an opening limit is formed when projections formed on two rear ends of the dispensing controller abut against blocks provided bilaterally in the shifting space, and a closing limit is formed when a groove of the dispensing controller abuts against a stop plate formed at a rear section of the shifting space. Thus, the container unit can be easily opened to dispense pet food or closed to not dispense pet food. | 02-04-2010 |
