| Patent application number | Description | Published |
|---|
| 20080272366 | Field effect transistor having germanium nanorod and method of manufacturing the same - A field effect transistor having at least one Ge nanorod and a method of manufacturing the field effect transistor are provided. The field effect transistor may include a gate oxide layer formed on a silicon substrate, at least one nanorod embedded in the gate oxide layer having both ends thereof exposed, a source electrode and a drain electrode connected to opposite sides of the at least one Ge nanorod, and a gate electrode formed on the gate oxide layer between the source electrode and the drain electrode. | 11-06-2008 |
| 20090020820 | CHANNEL-STRESSED SEMICONDUCTOR DEVICES AND METHODS OF FABRICATION - In one aspect, a method of fabricating a semiconductor device is provided. The method includes forming at least one capping layer over epitaxial source/drain regions of a PMOS device, forming a stress memorization (SM) layer over the PMOS device including the at least one capping layer and over an adjacent NMOS device, and treating the SM layer formed over the NMOS and PMOS devices to induce tensile stress in a channel region of the NMOS device. | 01-22-2009 |
| 20090170254 | Method of Manufacturing a Semiconductor Device - In a method of manufacturing a semiconductor device, a first gate electrode and a second gate electrode are formed in a first area and a second area of a substrate. Non-crystalline regions are formed in the first area of the substrate adjacent the first gate electrode. A layer having a first stress is formed on the substrate and the first and the second gate electrodes. A mask is formed on a first portion of the layer in the first area of the substrate to expose a second portion of the layer in the second area. The second portion is etched to form a sacrificial spacer on a sidewall of the second gate electrode. The second area of the substrate is partially etched using the mask, the second gate electrode and the sacrificial spacer, to form recesses in the second area of the substrate adjacent the second gate electrode. Patterns having a second stress are formed in the recesses. | 07-02-2009 |
| 20100006906 | Semiconductor device, single crystalline silicon wafer, and single crystalline silicon ingot - A semiconductor device includes a single crystalline substrate and an active region defined in the single crystalline substrate, wherein a major axis direction of the active region is aligned with a <0,1,1> family direction. | 01-14-2010 |
| 20100171181 | METHOD OF FORMING A SEMICONDUCTOR DEVICE HAVING AN EPITAXIAL SOURCE/DRAIN - A method of forming a semiconductor device includes forming a device isolation region in a silicon substrate to define an nMOS region and a pMOS region. A p-well is formed in the nMOS region and an n-well in the pMOS region. Gate structures are formed over the p-well and n-well, each gate structure including a stacked structure comprising a gate insulating layer and a gate electrode. A resist mask covers the nMOS region and exposes the pMOS region. Trenches are formed in the substrate on opposite sides of the gate structures of the pMOS region. SiGe layers are grown in the trenches of the pMOS region. The resist mask is removed from the nMOS region. Carbon is implanted to an implantation depth simultaneously on both the nMOS region and the pMOS region to form SiC on the nMOS region and SiGe on the pMOS region. | 07-08-2010 |
| 20110136311 | SEMICONDUCTOR DEVICE HAVING A LOCALLY BURIED INSULATION LAYER AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE - A semiconductor device having a locally buried insulation layer and a method of manufacturing a semiconductor device having the same are provided, in which a gate electrode is formed on a substrate, and oxygen ions are implanted into an active region to form a locally buried insulation layer. An impurity layer is formed on the locally buried insulation layer to form a source/drain. A silicide layer is formed on the source/drain and on the gate electrode. The locally buried insulation layer can prevent junction leakage, decrease junction capacitance and prevent a critical voltage of an MOS transistor from increasing due to body bias, thereby to improve characteristics of the device. | 06-09-2011 |
| 20110233611 | SEMICONDUCTOR DEVICE HAVING ANALOG TRANSISTOR WITH IMPROVED OPERATING AND FLICKER NOISE CHARACTERISTICS AND METHOD OF MAKING SAME - A semiconductor device with improved transistor operating and flicker noise characteristics includes a substrate, an analog NMOS transistor and a compressively-strained-channel analog PMOS transistor disposed on the substrate. The device also includes a first etch stop liner (ESL) and a second ESL which respectively cover the NMOS transistor and the PMOS transistor. The relative measurement of flicker noise power of the NMOS and PMOS transistors to flicker noise power of reference unstrained-channel analog NMOS and PMOS transistors at a frequency of 500 Hz is less than 1. | 09-29-2011 |
