Patent application number | Description | Published |
20080205456 | Laser uses for single-crystal CVD Diamond - The present invention is directed to new laser-related uses for single-crystal diamonds produced by chemical vapor deposition. One such use is as a heat sink for a laser; another such use is as a frequency converter. The invention is also directed to a χ | 08-28-2008 |
20080241049 | Ultrahard diamonds and method of making thereof - A single crystal diamond grown by microwave plasma chemical vapor deposition annealed at pressures in excess of 4.0 GPa and heated to temperature in excess of 1500 degrees C. that has a hardness of greater than 120 GPa. A method for manufacture a hard single crystal diamond includes growing a single crystal diamond and annealing the single crystal diamond at pressures in excess of 4.0 GPa and a temperature in excess of 1500 degrees C. to have a hardness in excess of 120 GPa. | 10-02-2008 |
20090038934 | APPARATUS AND METHOD FOR DIAMOND PRODUCTION - An apparatus for producing diamond in a deposition chamber including a heat-sinking holder for holding a diamond and for making thermal contact with a side surface of the diamond adjacent to an edge of a growth surface of the diamond, a noncontact temperature measurement device positioned to measure temperature of the diamond across the growth surface of the diamond and a main process controller for receiving a temperature measurement from the noncontact temperature measurement device and controlling temperature of the growth surface such that all temperature gradients across the growth surface are less than 20° C. The method for producing diamond includes positioning diamond in a holder such that a thermal contact is made with a side surface of the diamond adjacent to an edge of a growth surface of the diamond, measuring temperature of the growth surface of the diamond to generate temperature measurements, controlling temperature of the growth surface based upon the temperature measurements, and growing single-crystal diamond by microwave plasma chemical vapor deposition on the growth surface, wherein a growth rate of the diamond is greater than 1 micrometer per hour. | 02-12-2009 |
20090108237 | X-Ray-Induced Dissociation of H2O and Formation of an O2-H2 Alloy at High Pressure - A novel molecular alloy of O | 04-30-2009 |
20090110626 | Low Pressure Method of Annealing Diamonds - The present invention relates to method of improving the optical properties of diamond at low pressures and more specifically to a method of producing a CVD diamond of a desired optical quality which includes growing CVD diamond and raising the temperature of the CVD diamond from about 1400° C. to about 2200° C. at a pressure of from about 1 to about 760 torr outside the diamond stability field in a reducing atmosphere for a time period of from about 5 seconds to about 3 hours. | 04-30-2009 |
20100012022 | Diamond Uses/Applications Based on Single-Crystal CVD Diamond Produced at Rapid Growth Rate - The present invention is directed to new uses and applications for colorless, single-crystal diamonds produced at a rapid growth rate. The present invention is also directed to methods for producing single crystal diamonds of varying color at a rapid growth rate and new uses and applications for such single-crystal, colored diamonds. | 01-21-2010 |
20100104494 | Enhanced Optical Properties of Chemical Vapor Deposited Single Crystal Diamond by Low-Pressure/High-Temperature Annealing - The method of improving the optical properties of single crystal CVD diamond which comprises annealing the crystals at a temperature of up to 2200° C. and a pressure below 300 torr. | 04-29-2010 |
20100123098 | ULTRATOUGH SINGLE CRYSTAL BORON-DOPED DIAMOND - The invention relates to a single crystal boron doped CVD diamond that has a toughness of at least about 22 MPa m | 05-20-2010 |
20100126406 | Production of Single Crystal CVD Diamond at Rapid Growth Rate - In a method of producing diamonds by microwave plasma-assisted chemical vapor deposition which comprises providing a substrate and establishing a microwave plasma ball in an atmosphere comprising hydrogen, a carbon source and oxygen at a pressure and temperature sufficient to cause the deposition of diamond on said substrate, the improvement wherein the diamond is deposited under a pressure greater than 400 torr at a growth rate of at least 200 μm/hr. from an atmosphere which is either essentially free of nitrogen or includes a small amount of nitrogen. | 05-27-2010 |
20110280790 | Production of Large, High Purity Single Crystal CVD Diamond - The invention relates to single crystal diamond with optical quality and methods of making the same. The diamond possesses an intensity ratio of the second-order. Raman peak to the fluorescence background of around 5 or greater. | 11-17-2011 |