| Patent application number | Description | Published |
|---|
| 20090140148 | BOLOMETER AND METHOD OF MANUFACTURING THE SAME - A bolometer having decreased noise and increased temperature sensitivity and a method of manufacturing the same are provided. The bolometer has a resistive layer formed of single crystalline silicon (Si) or silicon germanium (Si | 06-04-2009 |
| 20090146058 | RESISTIVE MATERIALS FOR MICROBOLOMETER, METHOD FOR PREPARATION OF RESISTIVE MATERIALS AND MICROBOLOMETER CONTAINING THE RESISTIVE MATERIALS - Provided are resistive materials for a microbolometer, a method for preparation of resistive materials and a microbolometer containing the resistive materials. The resistive materials for the microbolometer include an alloy of silicon and antimony or an alloy of silicon, antimony and germanium, which has a high TCR and a low resistance. | 06-11-2009 |
| 20090152466 | MICROBOLOMETER WITH IMPROVED MECHANICAL STABILITY AND METHOD OF MANUFACTURING THE SAME - Provided are a microbolometer having a cantilever structure and a method of manufacturing the same, and more particularly, a microbolometer having a three-dimensional cantilever structure, which is improved from a conventional two-dimensional cantilever structure, and a method of manufacturing the same. The method includes providing a substrate including a read-out integrated circuit and a reflective layer for forming an absorption structure, forming a sacrificial layer on the substrate, forming a cantilever structure having an uneven cross-section in the sacrificial layer, forming a sensor part isolated from the substrate by the cantilever structure, and removing the sacrificial layer. | 06-18-2009 |
| 20090152467 | MULTILAYER-STRUCTURED BOLOMETER AND METHOD OF FABRICATING THE SAME - Provided are a multilayer-structured bolometer and a method of fabricating the same. In the multilayer-structured bolometer, the number of support arms supporting the body of a sensor structure is reduced to one, and two electrodes are formed on the one support arm. Thus, the sensor structure is electrically connected with a substrate through the only one support arm. According to the multilayer-structured bolometer and method of fabricating the bolometer, the thermal conductivity of the sensor structure is considerably reduced to remarkably improve sensitivity to temperature, and also the pixel size of the bolometer is reduced to obtain high-resolution thermal images. In addition, the multilayer-structured bolometer can have a high fill-factor due to a sufficiently large infrared-absorbing layer, and thus can improve infrared absorbance. | 06-18-2009 |
| 20100148067 | BOLOMETER STRUCTURE, INFRARED DETECTION PIXEL EMPLOYING BOLOMETER STRUCTURE, AND METHOD OF FABRICATING INFRARED DETECTION PIXEL - Provided are a bolometer structure, an infrared detection pixel employing the bolometer structure, and a method of fabricating the infrared detection pixel. | 06-17-2010 |
| 20100155601 | INFRARED SENSOR AND METHOD OF FABRICATING THE SAME - An infrared sensor and a method of fabricating the same are provided. The sensor includes a substrate including a reflection layer and a plurality of pad electrodes, an interdigitated sensing electrode connected to the pad electrode and formed to be spaced apart from the reflection layer by a predetermined distance and a sensing layer formed on the sensing electrode and having an opening exposing a portion in which an interdigitated region of the sensing electrode connected to one pad region is separated from the sensing electrode connected to the other pad electrode. Therefore, the sensor has an electrode in a very simple constitution, and a sensing layer divided into rectangular blocks, so that current that non-uniformly flows into the electrode can be removed. Accordingly, the sensor in which current of the sensing layer can be uniformly flown, and noise is lowered can be implemented. | 06-24-2010 |
| 20110042569 | INFRARED DETECTION SENSOR AND METHOD OF FABRICATING THE SAME - In an infrared detection sensor according to the present invention, all material constituting an upper portion of a sensing electrode in a supporting arm region is removed so that a supporting arm has low thermal conductivity. As a result, thermal conductivity of the infrared sensor structure is reduced, and the infrared detection sensor has excellent sensitivity. | 02-24-2011 |
| 20110049366 | RESISTIVE MATERIAL FOR BOLOMETER, BOLOMETER FOR INFRARED DETECTOR USING THE MATERIAL, AND METHOD OF MANUFACTURING THE BOLOMETER - A resistive material for a bolometer, a bolometer for an infrared detector using the material, and a method of manufacturing the bolometer are provided. In the resistive material, at least one element selected from the group consisting of nitrogen (N), oxygen (O) and germanium (Ge) is included in antimony (Sb). The resistive material has superior properties such as high temperature coefficient of resistance (TCR), low resistivity, a low noise constant, and is easily formed in a thin film structure by sputtering typically used in a complementary metal-oxide semiconductor (CMOS) process, so that it can be used as a resistor for the bolometer for an uncooled infrared detector, and thus provide the infrared detector with superior temperature precision. | 03-03-2011 |
| 20110140578 | PIEZOELECTRIC POWER GENERATOR - Provided is a small piezoelectric power generator applied to a wireless sensor network system of a tire pressure monitoring system (TPMS) for monitoring an internal environment of a tire such as variation in air pressure in the tire. In particular, when the system, in which air pressure, temperature and acceleration sensors are mounted, installed in the tire is operated in the TPMS for an automobile, a small piezoelectric power generator for the TPMS can be used as a power source in place of a conventional battery. The piezoelectric power generator includes a substrate having an electrode for transmitting power to the exterior, a metal plate formed on the substrate, and a piezoelectric body disposed on the metal plate and transmitting the power generated by a piezoelectric material to the electrode. | 06-16-2011 |
| 20110150701 | CHEMICAL SENSOR USING METAL NANO-PARTICLES AND METHOD FOR MANUFACTURING CHEMICAL SENSOR USING METAL NANO-PARTICLES - A chemical sensor using metal nano-particles and a method for manufacturing a chemical sensor using metal nano-particles are provided. The chemical sensor includes: metal nano-particles; single-ligand organic molecules (or a single molecule) that binds to the metal nano-particles by using a metal bonding functional group; a substrate bonding functional group formed at the metal nano-particles and the single-ligand organic molecules as bound to each other; a substrate; electrodes formed on the substrate and having an interdigitate (IDT) structure; and a substrate functional group formed on the substrate and positioned between the electrodes, wherein the substrate bonding functional group and the substrate functional group are covalently bonded. | 06-23-2011 |
| 20110159669 | METHOD FOR DEPOSITING AMORPHOUS SILICON THIN FILM BY CHEMICAL VAPOR DEPOSITION - Provided is a method of depositing an amorphous silicon thin film by chemical vapor deposition (CVD) to prevent bubble defect occurring when an amorphous silicon thin film is deposited on a substrate contaminated by air exposure. The deposition method includes cleaning a surface of the contaminated substrate with a reaction gas activated by plasma and depositing an amorphous silicon thin film on the cleaned substrate. Here, a vacuum state is maintained from the substrate cleaning step to the thin film deposition step in order to prevent contamination of the surface of the cleaned substrate by re-exposure to air. | 06-30-2011 |
