| Patent application number | Description | Published |
|---|
| 20090050929 | SEMICONDUCTOR SUBSTRATE WITH NITRIDE-BASED BUFFER LAYER FOR EPITAXY OF SEMICONDUCTOR OPTO-ELECTRONIC DEVICE AND FABRICATION THEREOF - The invention discloses a semiconductor substrate for epitaxy of a semiconductor optoelectronic device and the fabrication thereof. The semiconductor substrate according to the invention includes a substrate, and a nitride-based buffer layer. The buffer layer is formed by an atomic layer deposition process and/or a plasma-enhanced (or a plasma-assisted) atomic layer deposition process on an upper surface of the substrate. The nitride-based buffer layer assists the epitaxial growth of a semiconductor material layer of the semiconductor optoelectronic device. | 02-26-2009 |
| 20090068780 | METHOD OF FABRICATING SEMICONDUCTOR OPTOELECTRONIC DEVICE AND RECYCLING SUBSTRATE DURING FABRICATION THEREOF - The invention discloses a method of fabricating a semiconductor optoelectronic device. First, a substrate is prepared. Subsequently, a buffer layer is deposited on the substrate. Then, a multi-layer structure is deposited on the buffer layer, wherein the multi-layer structure includes an active region. The buffer layer assists the epitaxial growth of the bottom-most layer of the multi-layer structure, and the buffer layer also serves as a lift-off layer. Finally, with an etching solution, only the lift-off layer is etched to debond the substrate away from the multi-layer structure, wherein the multi-layer structure serves as the semiconductor optoelectronic device. | 03-12-2009 |
| 20090075481 | METHOD OF FABRICATING SEMICONDUCTOR SUBSTRATE BY USE OF HETEROGENEOUS SUBSTRATE AND RECYCLING HETEROGENEOUS SUBSTRATE DURING FABRICATION THEREOF - The invention discloses a method of fabricating a first substrate and a method of recycling a second substrate during fabrication of the first substrate. The second substrate is heterogeneous for the first substrate. First, the fabricating method according to the invention is to prepare the second substrate. Subsequently, the fabricating method is to deposit a buffer layer on the second substrate. Then, the fabricating method is to deposit a semiconductor material layer on the buffer layer. The buffer layer assists the epitaxial growth of the semiconductor material layer, and serves as a lift-off layer. Finally, with an etching solution, the fabricating method is to only etch the lift-off layer to debond the second substrate away from the semiconductor material layer, where the semiconductor material layer serves as the first substrate. | 03-19-2009 |
| 20090090931 | SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD OF FABRICATING THE SAME - The invention discloses a semiconductor light-emitting device and a method of fabricating the same. The semiconductor light-emitting device according to the invention includes a substrate, a buffer layer, a corrosion-resistant film, a multi-layer structure, and an ohmic electrode structure. The buffer layer is grown on an upper surface of the substrate. The corrosion-resistant film is deposited to overlay the buffer layer The multi-layer structure is grown on the corrosion-resistant film and includes a light-emitting region. The buffer layer assists the epitaxial growth of a bottom-most layer of the multi-layer structure. The corrosion-resistant film prevents the buffer layer from being corroded by a gas during the epitaxial growth of the bottom-most layer. The ohmic electrode structure is deposited on the multi-layer structure. | 04-09-2009 |
| 20090283139 | SEMICONDUCTOR STRUCTURE COMBINATION FOR THIN-FILM SOLAR CELL AND MANUFACTURE THEREOF - The invention discloses a semiconductor structure combination for a thin-film solar cell and a manufacture thereof. The semiconductor structure combination according to the invention includes a substrate, a multi-layer structure, and a passivation layer. The substrate has an upper surface. The multi-layer structure is deposited on the upper surface of the substrate and includes a p-n junction, a p-i-n junction, an n-i-p junction, a tandem junction or a multi-junction. The passivation layer is deposited by an atomic layer deposition process and/or a plasma-enhanced (or a plasma-assisted) atomic layer deposition process on a top-most layer of the multi-layer structure. | 11-19-2009 |
