| Patent application number | Description | Published |
|---|
| 20080213556 | MATERIALS HAVING PREDEFINED MORPHOLOGIES AND METHODS OF FORMATION THEREOF - A material and an associated method of formation. A self-assembling block copolymer that includes a first block species and a second block species respectively characterized by a volume fraction of F | 09-04-2008 |
| 20080233323 | ORIENTING, POSITIONING, AND FORMING NANOSCALE STRUCTURES - A method. A first copolymer is provided. A substrate is provided having an energetically neutral surface layer with at least one trough integrally disposed thereon with sidewalls. A first film of the first copolymer is coated inside the trough. Line-forming microdomains are assembled of the first copolymer forming first self-assembled structures within the first film normal to the sidewalls and parallel to the surface layer. The first and second polymer blocks are removed from the first film and oriented structures remain in the trough normal to the sidewalls and parallel to the surface layer. A second film of a second copolymer is coated inside the trough. Line-forming microdomains are assembled of the second copolymer, and form second self-assembled structures within the second film oriented normal to the oriented structures and parallel to the sidewalls. The third and fourth polymer blocks are removed, and at least one second oriented structure remains. | 09-25-2008 |
| 20080233343 | ORIENTING, POSITIONING, AND FORMING NANOSCALE STRUCTURES - Methods and a structure. A first film of a first block copolymer is formed inside a trough integrally disposed on an energetically neutral surface layer of a substrate. Line-forming microdomains are assembled of the first block copolymer, and form first self-assembled structures within the first film normal to the sidewalls and parallel to the surface layer. At least one microdomain is removed from the first film such that oriented structures remain in the trough oriented normal to the sidewalls and parallel to the surface layer. A second film of a second block copolymer is formed inside the trough. Line-forming microdomains are assembled of the second block copolymer, and form second self-assembled structures within the second film oriented normal to the oriented structures and parallel to the sidewalls. A second method and a structure are also provided. | 09-25-2008 |
| 20090107950 | FORMING SURFACE FEATURES USING SELF-ASSEMBLING MASKS - A method for producing surface features and an etch masking method. A combination is provided of a block copolymer and additional material. The block copolymer includes a first block of a first polymer covalently bonded to a second block of a second polymer. The additional material is miscible with the first polymer. A film is formed of the combination directly onto a surface of a first layer. Nanostructures of the additional material self-assemble within the first polymer block. The film of the combination and the first layer are etched. The nanostructures have an etch rate lower than an etch rate of the block copolymer and lower than an etch rate of the first layer. The film is removed and features remain on the surface of the first layer. Also included is an etch masking method where the nanostructures mask portions of the first layer from said etchant. | 04-30-2009 |
| 20090107953 | METHODS FOR FORMING SURFACE FEATURES USING SELF-ASSEMBLING MASKS - A method for producing surface features and an etch masking method. A combination is provided of a block copolymer and additional material. The block copolymer includes a first block of a first polymer covalently bonded to a second block of a second polymer. The additional material is miscible with the first polymer. A film is formed of the combination directly onto a surface of a first layer. Nanostructures of the additional material self-assemble within the first polymer block. The film of the combination and the first layer are etched. The nanostructures have an etch rate lower than an etch rate of the block copolymer and lower than an etch rate of the first layer. The film is removed and features remain on the surface of the first layer. Also included is an etch masking method where the nanostructures mask portions of the first layer from said etchant. | 04-30-2009 |
| 20090170342 | DIELECTRIC NANOSTRUCTURE AND METHOD FOR ITS MANUFACTURE - The present invention relates to dielectric nanostructures useful in semiconductor devices and other electronic devices and methods for manufacturing the dielectric nanostructures. The nanostructures generally comprises an array of isolated pillars positioned on a substrate. The methods of the present invention involve using semiconductor technology to manufacture the nanostructures from a mixture of a crosslinkable dielectric material and an amphiphilic block copolymer. | 07-02-2009 |
| 20090181171 | Method of Controlling Orientation of Domains in Block Copolymer Films - A method of orienting microphase-separated domains is disclosed, comprising applying a composition comprising an orientation control component, and a block copolymer assembly component comprising a block copolymer having at least two microphase-separated domains in which the orientation control component is substantially immiscible with the block copolymer assembly component upon forming a film; and forming a compositionally vertically segregated film on the surface of the substrate from the composition. The orientation control component and block copolymer segregate during film forming to form the compositionally vertically-segregated film on the surface of a substrate, where the orientation control component is enriched adjacent to the surface of the compositionally segregated film adjacent to the surface of the substrate, and the block copolymer assembly is enriched at an air-surface interface. | 07-16-2009 |
| 20100055307 | Nanoporous Media with Lamellar Structures - A nanoporous material exhibiting a lamellar structure is disclosed. The material comprises three or more substantially parallel sheets of an organosilicate material, separated by highly porous spacer regions. The distance between the centers of the sheets lies between 1 nm and 50 nm. The highly porous spacer regions may be substantially free of condensed material. For the manufacture of such materials, a process is disclosed in which matrix non-amphiphilic polymeric material and templating polymeric material are dispersed in a solvent, where the templating polymeric material includes a polymeric amphiphilic material. The solvent with the polymeric materials is distributed onto a substrate. Organization is induced in the templating polymeric material. The solvent is removed, leaving the polymeric materials in place. The matrix polymeric material is cured, forming a lamellar structure. | 03-04-2010 |
| 20100120252 | Method of Positioning Patterns from Block Copolymer Self-Assembly - A method of controlling both alignment and registration (lateral position) of lamellae formed from self-assembly of block copolymers, the method comprising the steps of obtaining a substrate having an energetically neutral surface layer comprising a first topographic “phase pinning” pattern and a second topographic “guiding” pattern; obtaining a self-assembling di-block copolymer; coating the self-assembling di-block copolymer on the energetically neutral surface to obtain a coated substrate; and annealing the coated substrate to obtain micro-domains of the di-block copolymer. | 05-13-2010 |
| 20110002841 | Methods of Forming Metal Oxide Nanostructures, and Nanostructures Thereof - A method of forming a metal oxide nanostructure comprises disposing a chelated oligomeric metal oxide precursor on a solvent-soluble template to form a first structure comprising a deformable chelated oligomeric metal oxide precursor layer; setting the deformable chelated oligomeric metal oxide precursor layer to form a second structure comprising a set metal oxide precursor layer; dissolving the solvent-soluble template with a solvent to form a third structure comprising the set metal oxide precursor layer; and thermally treating the third structure to form the metal oxide nanostructure. | 01-06-2011 |
| 20110037175 | INTERCONNECTION BETWEEN SUBLITHOGRAPHIC-PITCHED STRUCTURES AND LITHOGRAPHIC-PITCHED STRUCTURES - An interconnection between a sublithographic-pitched structure and a lithographic pitched structure is formed. A plurality of conductive lines having a sublithographic pitch may be lithographically patterned and cut along a line at an angle less than 45 degrees from the lengthwise direction of the plurality of conductive lines. Alternately, a copolymer mixed with homopolymer may be placed into a recessed area and self-aligned to form a plurality of conductive lines having a sublithographic pitch in the constant width region and a lithographic dimension between adjacent lines at a trapezoidal region. Yet alternately, a first plurality of conductive lines with the sublithographic pitch and a second plurality of conductive lines with the lithographic pitch may be formed at the same level or at different. | 02-17-2011 |
| 20110059299 | Method of Forming Self-Assembled Patterns Using Block Copolymers, and Articles Thereof - A method of forming a block copolymer pattern comprises providing a substrate comprising a topographic pre-pattern comprising a ridge surface separated by a height, h, greater than 0 nanometers from a trench surface; disposing a block copolymer comprising two or more block components on the topographic pre-pattern to form a layer having a thickness of more than 0 nanometers over the ridge surface and the trench surface; and annealing the layer to form a block copolymer pattern having a periodicity of the topographic pre-pattern, the block copolymer pattern comprising microdomains of self-assembled block copolymer disposed on the ridge surface and the trench surface, wherein the microdomains disposed on the ridge surface have a different orientation compared to the microdomains disposed on the trench surface. | 03-10-2011 |
| 20110111339 | BILAYER SYSTEMS INCLUDING A POLYDIMETHYLGLUTARIMIDE-BASED BOTTOM LAYER AND COMPOSITIONS THEREOF - Bilayer systems include a bottom layer formed of polydimethylglutarimide, an acid labile dissolution inhibitor and a photoacid generator. The bilayer system can be exposed and developed in a single exposure and development process. | 05-12-2011 |
| 20110147983 | METHODS OF DIRECTED SELF-ASSEMBLY AND LAYERED STRUCTURES FORMED THEREFROM - A method of forming a layered structure comprising a domain pattern of a self-assembled material comprises: disposing on a substrate a photoresist layer comprising a non-crosslinking photoresist; optionally baking the photoresist layer; pattern-wise exposing the photoresist layer to first radiation; optionally baking the exposed photoresist layer; and developing the exposed photoresist layer with a non-alkaline developer to form a negative-tone patterned photoresist layer comprising non-crosslinked developed photoresist; wherein the developed photoresist is not soluble in a given organic solvent suitable for casting a given material capable of self-assembly, and the developed photoresist is soluble in an aqueous alkaline developer and/or a second organic solvent. A solution comprising the given material capable of self-assembly dissolved in the given organic solvent is casted on the patterned photoresist layer, and the given organic solvent is removed. The casted given material is allowed to self-assemble while optionally heating and/or annealing the casted given material, thereby forming the layered structure comprising the domain pattern of the self-assembled given material. | 06-23-2011 |
| 20110147984 | METHODS OF DIRECTED SELF-ASSEMBLY, AND LAYERED STRUCTURES FORMED THEREFROM - A method of forming a layered structure comprising a self-assembled material comprises: disposing a non-crosslinking photoresist layer on a substrate; pattern-wise exposing the photoresist layer to first radiation; optionally heating the exposed photoresist layer; developing the exposed photoresist layer in a first development process with an aqueous alkaline developer, forming an initial patterned photoresist layer; treating the initial patterned photoresist layer photochemically, thermally and/or chemically, thereby forming a treated patterned photoresist layer comprising non-crosslinked treated photoresist disposed on a first substrate surface; casting a solution of an orientation control material in a first solvent on the treated patterned photoresist layer, and removing the first solvent, forming an orientation control layer; heating the orientation control layer to effectively bind a portion of the orientation control material to a second substrate surface; removing at least a portion of the treated photoresist and, optionally, any non-bound orientation control material in a second development process, thereby forming a pre-pattern for self-assembly; optionally heating the pre-pattern; casting a solution of a material capable of self-assembly dissolved in a second solvent on the pre-pattern and removing the second solvent; and allowing the casted material to self-assemble with optional heating and/or annealing, thereby forming the layered structure comprising the self-assembled material. | 06-23-2011 |
