Ho-Cheol
Ho Cheol Jung, Yongin KR
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20120089321 | SYSTEM AND METHOD FOR ALARMING FRONT IMPACT DANGER COUPLED WITH DRIVER VIEWING DIRECTION AND VEHICLE USING THE SAME - Featured are a system and a method for alarming a front impact danger coupled with a driver viewing direction and a vehicle Such a system includes: a driver viewing direction recognition unit recognizing a driver viewing direction; an obstacle sensing unit sensing obstacles existing in directions that a driver does not view; and an engine control unit. The engine control unit receives and analyzes the driver face direction data from the driver viewing direction recognition unit to identify the driver viewing direction when the vehicle enters in the crossroads, and requests the obstacle sensing unit perform obstacle sensing for another direction than the driver's viewing direction and analyzes analyze an obstacle sensing result. Such methods advantageously warns a driver to the presence of obstacles when a vehicle enters in crossroads to prevent a traffic accident. | 04-12-2012 |
Ho Cheol Kang, Gyeonggi-Do KR
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20110069265 | ELECTROSTATIC DISCHARGE PROTECTION ELEMENT, LIQUID CRYSTAL DISPLAY DEVICE HAVING THE SAME, AND MANUFACTURING METHOD THEREOF - An electrostatic discharge protection element, a liquid crystal display device having the same, and a manufacturing method. A first ESD organic TFT, a second ESD organic TFT, a third ESD organic TFT each have a gate electrode, a source electrode and a drain electrode in which the source electrode and drain electrode of the first and second ESD organic TFTs and the gate electrode of the third ESD organic TFT are electrically connected. The gate electrode and the source electrode of the first ESD organic TFT are electrically connected to a first array line and the gate electrode and the drain electrode of the second ESD organic TFT are electrically connected to a second array line. The source electrode of the third ESD organic TFT is electrically connected to a data line or a gate line and the drain of the third ESD organic TFT are electrically connected to a common voltage line. | 03-24-2011 |
20110249208 | METHOD OF MANUFACTURING A LIQUID CRYSTAL DISPLAY HAVING TOP GATE THIN FILM TRANSISTORS WHEREIN EACH GATE ELECTRODE CONTACTS AN AUXILLIARY ELECTRODE - An electrostatic discharge protection element, a liquid crystal display device having the same, and a manufacturing method. A first ESD organic TFT, a second ESD organic TFT, a third ESD organic TFT each have a gate electrode, a source electrode and a drain electrode in which the source electrode and drain electrode of the first and second ESD organic TFTs and the gate electrode of the third ESD organic TFT are electrically connected. The gate electrode and the source electrode of the first ESD organic TFT are electrically connected to a first array line and the gate electrode and the drain electrode of the second ESD organic TFT are electrically connected to a second array line. The source electrode of the third ESD organic TFT is electrically connected to a data line or a gate line and the drain of the third ESD organic TFT are electrically connected to a common voltage line. | 10-13-2011 |
20110284819 | QUANTUM DOT LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME - The present invention relates to a quantum dot light emitting element which can form a quantum light emitting layer configured of charge transporting particles and quantum dots and a charge transporting layer in a solution process, to reduce process expense, and a method for manufacturing the same. The quantum dot light emitting element includes a substrate, an anode formed on the substrate, a quantum light emitting layer formed on the anode, the quantum light emitting layer having charge transporting particles and quantum dots mixed therein, and a cathode formed on the quantum light emitting layer. | 11-24-2011 |
20110291071 | QUANTUM DOT LIGHT EMITTING DIODE DEVICE AND DISPLAY DEVICE THEREWITH - The present invention relates to a quantum dot light emitting diode device in which a hole transportation layer is formed after forming a quantum dot light emitting layer by a solution process by applying an inverted type quantum dot light emitting diode device for making free selection of a hole transportation layer material that enables easy injection of a hole to the quantum dot light emitting layer; and display device and method therewith. | 12-01-2011 |
Ho Cheol Kim, Seoul KR
Ho Cheol Kim, Daejeon KR
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20080234508 | Process for the Preparation of N(5)-Ethylglutamine - Disclosed relates to a process for preparing N(5)-ethylglutamines economically without a specific purification process via a simplified and safe process, in which glutamic acid derivatives, represented by formula 1, protected by phthaloyl groups react with ethylamine to cause an amidation and a deprotection reaction in turn under the same reaction condition, thus preparing N(5)-ethylglutamines. | 09-25-2008 |
Ho Cheol Kwon, Kyongsangnam-Do KR
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20120085132 | METHOD OF FORMING A DRUM TYPE WASHING MACHINE HAVING A DRIVING UNIT - The washing machine includes a tub mounted in a cabinet, a drum mounted in the tub, a shaft that transmits a driving force from a motor to the drum, front and rear bearings mounted on an outer circumference of opposite end portions of the shaft, a bearing housing built in a central portion of a rear wall of the tub to support the front bearing, a rotor coupled to the rear end portion of the shaft, a stator fixed to the tub rear wall inward of the rotor, and a connector of the rotor that serration coupled to the outer circumference of the shaft in front of the rear bearing so as to transmit rotating power from the rotor to the shaft. A bearing bracket may be fixed to the rear wall of the tub so as to cover an outside of the rotor and support the rear bearing. | 04-12-2012 |
Ho Cheol Lee, Yonging-Si KR
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20130294134 | STACKED LAYER TYPE SEMICONDUCTOR DEVICE AND SEMICONDUCTOR SYSTEM INCLUDING THE SAME - A stacked layer type semiconductor device includes N memories each including at least one main via and (N−1) sub vias, the N memories being sequentially stacked on one-another so that central axes of the N memories face each other crosswise, and a plurality of connection units electrically connecting the N memories. Here, N is a natural number greater than 1. | 11-07-2013 |
Ho Cheol Lee, Suwon-Si KR
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20120008513 | METHOD AND APPARATUS FOR DETECTING TARGET FLOW IN WIRELESS COMMUNICATION SYSTEM - An apparatus and method for detecting a target flow in a wireless communication system are provided. The target flow detection method includes receiving a packet, determining a behavior state of the packet, comparing the behavior state with a plurality of stored behavior signatures, retrieving, when the behavior state matches one of the stored behavior signatures, a target flow corresponding to the behavior signature, and instructing a packet processor to process the target flow. | 01-12-2012 |
20130170377 | APPARATUS AND METHOD FOR IDENTIFYING APPLICATION USING PACKET IN COMMUNICATION SYSTEM - An apparatus and a method for identify an application to which a packet flow belongs in a communication system. In the method, characteristic information of a first application is selected. Bit lines of a position designated by a mask included in the characteristic information are examined from packets transferred via the packet flow. A ratio of the number of examination results of coincidence to the number of all input packets is calculated. When the ratio exceeds a first threshold included in the characteristic information, it is determined that the packet flow belongs to the first application. | 07-04-2013 |
Ho Cheol Park, Suwon-Si KR
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20140374724 | ORGANIC LIGHT-EMITTING COMPOUND AND ORGANIC ELECTROLUMINESCENT DEVICE USING SAME - The present invention relates to a novel indole-based compound having superior hole injection and transport capabilities, light-emitting capabilities, and the like, and an organic electroluminescent device which comprises the indole-based compound in one or more organic layers thereof so as to thereby achieve improved characteristics, such as light-emitting efficiency, driving voltage, and lifespan characteristics. | 12-25-2014 |
Ho Cheol Shin, Daejeon KR
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20100104059 | RENORMALIZATION METHOD OF EXCORE DETECTOR - Disclosed is a calibration method of an excore detector used in core power monitoring of a nuclear power plant, in which a spatial weighting function (SWF), used to theoretically predict a signal of the excore detector is multiplied by a designated calibration factor to reflect characteristics of the excore detector in a calibration process. It is assumed that the SWF is the multiplication of a one-dimensional shape annealing function (SAF) and a two-dimensional SWF, and the SAF is multiplied by the calibration factor. Since the SAF is calculated in a normalized form, the multiplication of the SAF by the calibration factor to reflect characteristics of the excore detector corresponds to new normalization and thus the calibration of the SAF is referred to as renormalization The signal of the excore detector is considerably accurately predicted by multiplying the theoretically calculated SAF by the renormalization factor, and the multiplication is equally applied although the characteristics of the excore detector are highly changed. An increase in the accuracy of the excore detector in the nuclear power plant prevents unnecessary reactor trips and allows a reactor to be operated at a stable power, thus obtaining the safety of a core and raising economical efficiency. | 04-29-2010 |
20100274745 | PREDICTION METHOD FOR MONITORING PERFORMANCE OF POWER PLANT INSTRUMENTS - Disclosed is a prediction method for monitoring performance of power plant instruments. The prediction method extracts a principal component of an instrument signal, obtains an optimized constant of a SVR model through a response surface methodology using data for optimization, and trains a model using training data. Therefore, compared to an existing Kernel regression method, accuracy for calculating a prediction value can be improved. | 10-28-2010 |
20140013873 | CAM-LOCKING DISSIMILAR MATERIAL SLEEVE - Disclosed is a cam-locking dissimilar material sleeve installed on an outer surface of an expansion shaft of an inspection robot inserted into a heat transfer tube of a steam generator for generating nuclear power to inspect the heat transfer tube, the cam-locking dissimilar material sleeve including: a tension part formed of steel and including a plurality of upwardly opened slits and a plurality of downwardly opened slits alternately formed in zigzags and legs formed between the upwardly opened slits and the downwardly opened slits; a plurality of upper contact parts formed of a synthetic resin through injection-molding to surround an upper end of the tension part and surround parts located between the upwardly opened slits; and a plurality of lower contact parts formed of a synthetic resin through injection-molding to surround a lower end of the tension part and surround parts located between the downwardly opened slits. | 01-16-2014 |
Ho-Cheol Jang, Gyeonggi-Do KR
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20080211053 | Superjunction Semiconductor Device - In accordance with an embodiment of the invention, a superjunction semiconductor device includes an active region and a termination region surrounding the active region. A central vertical axis of a boundary column of a second conductivity type material defines the boundary between the active region and the termination region. The active and termination regions include columns of first and second conductivity type material alternately arranged along a horizontal direction in a semiconductor region having top and bottom surfaces. At least one of the columns of the first conductivity type material in the termination region has a different width than a width of the columns of the first conductivity type material in the active region. | 09-04-2008 |
20110097864 | Method of Fabricating High-Voltage Semiconductor Device - A method of fabricating a high-voltage semiconductor device includes the following steps: providing a semiconductor layer; forming a plurality of trenches in the semiconductor layer to define a plurality of pillars of a first conductivity type in the semiconductor layer between adjacent trenches, wherein the trenches extend from a top surface of the semiconductor layer toward a bottom surface of the semiconductor layer; forming a charge compensation layer of a second conductivity type over at least sidewalls of each trench to a predetermined thickness thereby forming a groove in each trench; and substantially filling each groove with a charge compensation plug of the first conductivity type. | 04-28-2011 |
20120161274 | SUPERJUNCTION SEMICONDUCTOR DEVICE - A superjunction semiconductor device includes an edge p pillar, an active region, and a termination region. The edge p pillar has a rectangular ring shape with rounded corners. The edge p pillar has an outer region surrounding the active region and an inner region on in the sides of the active region. The active region has active p pillars and active n pillars having vertical stripe shapes. The active p pillars and the active n pillars are alternately arranged horizontally in the active region. The termination region includes termination n pillars and termination p pillars alternately arranged around the edge p pillar. | 06-28-2012 |
Ho-Cheol Jang, Bucheon KR
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20120261715 | POWER SEMICONDUCTOR DEVICE AND METHODS FOR FABRICATING THE SAME - A power semiconductor device includes: a drain region of a first conductive type; a drift region of a first conductive type formed on the drain region; a first body region of a second conductive type formed below an upper surface of the drift region; a second body region of a second conductive type formed below the upper surface of the drift region and in the first body region; a third body region of a second conductive type formed by protruding downwards from a lower end of the first body region; a source region of a first conductive type formed below the upper surface of the drift region and in the first body region; and a gate insulating layer formed on channel regions of the first body region and on the drift region between the first body regions. | 10-18-2012 |
20120299094 | SEMICONDUCTOR DEVICE HAVING A SUPER JUNCTION STRUCTURE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device having a super junction and a method of manufacturing the semiconductor device capable of obtaining a high breakdown voltage are provided, whereby charge balance of the super junction is further accurately controlled in the semiconductor device that is implemented by an N-type pillar and a P-type pillar. The semiconductor device includes a semiconductor substrate; and a blocking layer including a first conductive type pillar and a second conductive type pillar that extend in a vertical direction on the semiconductor substrate and that are alternately arrayed in a horizontal direction, wherein, in the blocking layer, a density profile of a first conductive type dopant may be uniform in the horizontal direction, and the density profile of the first conductive type dopant may vary in the vertical direction. | 11-29-2012 |
20140141584 | POWER SEMICONDUCTOR DEVICE AND METHODS FOR FABRICATING THE SAME - A power semiconductor device includes: a drain region of a first conductive type; a drift region of a first conductive type formed on the drain region; a first body region of a second conductive type formed below an upper surface of the drift region; a second body region of a second conductive type formed below the upper surface of the drift region and in the first body region; a third body region of a second conductive type formed by protruding downwards from a lower end of the first body region; a source region of a first conductive type formed below the upper surface of the drift region and in the first body region; and a gate insulating layer formed on channel regions of the first body region and on the drift region between the first body regions. | 05-22-2014 |
Ho-Cheol Jeon, Seoul KR
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20140258404 | SYSTEM FOR SHARING EVENT AND DATA BETWEEN PERSONAL DEVICES - A personal information server in a system for event and data sharing includes: a server data manager configured to receive an event triggered at a personal device being used, from among the personal devices, and data information related to the event; and a server database manager configured to store the event and data information received at the server data manager, where the server data manager transmits the event and data information stored at the server database manager to a personal device that does not have the event and data information from among the registered personal devices, and a data sharing application installed in each of the registered personal devices transmits the event and data information triggered at the personal device. The disclosed system provides the advantage of enabling data sharing among a user's personal devices and thus allowing more intelligent services based on dynamic data sharing between personal devices. | 09-11-2014 |
Ho-Cheol Kang, Gumpo KR
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20100127249 | ELECTROPHORETIC DISPLAY DEVICE AND METHOD FOR FABRICATING THE SAME - An electrophoretic display device includes: a first substrate having a plurality of pixels formed in a plurality of vertical pixel rows and a plurality of horizontal pixel rows; a plurality of data lines formed at every vertical pixel row of the first substrate; a thin film transistor (TFT) formed at each pixel of the first substrate and including a source electrode, a drain electrode, an organic semiconductor layer, and a gate electrode; a passivation layer formed on the TFTs and the data lines of the first substrate and including a first contact hole exposing the drain electrode of the TFT and a second contact hole exposing the gate electrode of the TFT; a pixel electrode formed on the passivation layer at each pixel of the first substrate and connected with the drain electrode of the TFT via the first contact hole of the passivation layer; a plurality of gate lines formed on the passivation layer at every horizontal pixel row of the first substrate and connected with the gate electrode of the TFT via the second contact hole of the passivation layer; a second substrate attached to the first substrate in a facing manner; a common electrode formed on the second substrate; and an electrophoretic film formed between the first and second substrates. | 05-27-2010 |
Ho-Cheol Kang, Geonggi-Do KR
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20110006290 | ARRAY SUBSTRATE FOR LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME - An array substrate for a display device, including a substrate having a pixel region and a switching region, a source electrode and a drain electrode on the switching region of the substrate, ends of the source and drain electrodes having tapered edges, a pixel electrode in the pixel region of the substrate, the pixel electrode being connected to the drain electrode, an organic semiconductor layer on the source and drain electrodes, the organic semiconductor layer completely contacting tapered edges and a top surface of each of the source and drain electrodes, a first insulating layer on the organic semiconductor layer, and a gate electrode on the first insulating layer. | 01-13-2011 |
Ho-Cheol Kang, Gunpo KR
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20130141323 | ELECTOPHORETIC DISPLAY DEVICE AND METHOD FOR FABRICATING THE SAME - An electrophoretic display device includes: a first substrate having a plurality of pixels formed in a plurality of vertical pixel rows and a plurality of horizontal pixel rows; a plurality of data lines formed at every vertical pixel row of the first substrate; a thin film transistor (TFT) formed at each pixel of the first substrate and including a source electrode, a drain electrode, an organic semiconductor layer, and a gate electrode; a passivation layer formed on the TFTs and the data lines of the first substrate and including a first contact hole exposing the drain electrode of the TFT and a second contact hole exposing the gate electrode of the TFT; a pixel electrode formed on the passivation layer at each pixel of the first substrate and connected with the drain electrode of the TFT via the first contact hole of the passivation layer; a plurality of gate lines formed on the passivation layer at every horizontal pixel row of the first substrate and connected with the gate electrode of the TFT via the second contact hole of the passivation layer; a second substrate attached to the first substrate in a facing manner; a common electrode formed on the second substrate; and an electrophoretic film formed between the first and second substrates. | 06-06-2013 |
Ho-Cheol Lee, Gyeonggi-Do KR
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20090175114 | MULTI-PORT SEMICONDUCTOR MEMORY DEVICE HAVING VARIABLE ACCESS PATHS AND METHOD THEREFOR - A multi-port semiconductor memory device having variable access paths and a method therefor are provided. The semiconductor memory device includes a plurality of input/output ports; a memory array divided into a plurality of memory areas; and a select control unit to variably control access paths between the memory areas and the input/output ports so that each memory area is accessed through at least one of the input/output ports. | 07-09-2009 |
20100232249 | MULTI-PORT SEMICONDUCTOR MEMORY DEVICE HAVING VARIABLE ACCESS PATHS AND METHOD THEREFOR - A multi-port semiconductor memory device having variable access paths and a method therefor are provided. The semiconductor memory device includes a plurality of input/output ports; a memory array divided into a plurality of memory areas; and a select control unit to variably control access paths between the memory areas and the input/output ports so that each memory area is accessed through at least one of the input/output ports. | 09-16-2010 |
Ho-Cheol Lee, Yongin-City KR
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20080205175 | Auto-precharge control circuit in semiconductor memory and method thereof - An auto-precharge control circuit in a semiconductor memory and method thereof, where the auto-precharge starting point may vary. The auto-precharge starting point may vary in response to at least one control signal. The auto-precharge starting point may vary in accordance with frequency and/or latency information. The auto-precharge starting point may vary in response to at least one control signal including clock frequency information. The auto-precharge starting point may vary depending on a latency signal received from a mode register setting command. The auto-precharge control circuit may include a control circuit for receiving a write signal, a clock signal and at least one control signal, including at least one of clock frequency information and latency information, and outputting at least one path signal; an auto-precharge pulse signal driver for receiving the at least one path signal, the write signal, and an enable signal and producing an auto-precharge pulse signal, the auto-precharge pulse signal identifying a starting point for an auto-precharge operation; and an auto-precharge mode enabling circuit for receiving the clock signal, an auto-precharge command, an active signal, and the auto-precharge pulse signal and generating the enable signal. | 08-28-2008 |
Ho-Cheol Lee, Suji-Eup KR
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20090254698 | MULTI PORT MEMORY DEVICE WITH SHARED MEMORY AREA USING LATCH TYPE MEMORY CELLS AND DRIVING METHOD - A multiport semiconductor memory device includes; first and second port units respectively coupled to first and second processors, first and second dedicated memory area accessed by first and second processors, respectively and implemented using DRAM cells, a shared memory area commonly accessed by the first and second processors via respective first and second port units and implemented using memory cells different from the DRAM cells implementing the first and second dedicated memory areas, and a port connection control unit controlling data path configuration between the shared memory area and the first and second port units to enable data communication between the first and second processors through the shared memory area. | 10-08-2009 |
Ho-Cheol Park, Gyeonggi-Do KR
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20090001882 | White Light Emitting Organic Electroluminescent Device - Provided is a white light emitting organic electroluminescent device, which includes a transparent substrate, a first element, and a second element. The first element includes a first anode, a first element organic layer, and a reflective cathode sequentially disposed on a first substrate of the transparent substrate. The second element includes a second anode, a second element organic layer, and a transparent or translucent cathode sequentially disposed on a second surface of the transparent substrate. The white light emitting organic electroluminescent device of the present invention can eliminate the color coordinates shift phenomenon of white light that occurs in a conventional three primary color white light organic electroluminescent device. Since the aging effect caused by heat generated from light emission is reduced by dividing electroluminescent layers, the electroluminescent device can have a long lifespan. | 01-01-2009 |
Ho-Cheol Seo, Suwon-Si KR
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20130148474 | METHOD AND APPARATUS FOR SETTING ALARM IN PORTABLE TERMINAL - A method and apparatus for setting an alarm in a portable terminal are provided. The method includes receiving a message for requesting the setting of the alarm from a peer terminal, confirming a right of the peer terminal to set an alarm, determining, if the peer terminal has the right to set the alarm, an alarm generation time according to a transmission time of the alarm setting request message, and setting the alarm for the alarm generation time. | 06-13-2013 |
Ho-Cheol Seo, Ulsan KR
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20130160434 | THERMOELECTRIC GENERATOR OF VEHICLE - A thermoelectric generator of a vehicle converts thermal energy of exhaust gas of an engine into electric energy by using a thermoelectric phenomenon, and may include: a high-temperature part heated by exchange heat and a plurality of pairs of heat transfer plates mounted on an outer peripheral surface of an exhaust pipe at a predetermined interval; pairs of thermoelectric modules acquired by bonding a P-type semiconductor and an N-type semiconductor, interposed between the pairs of heat transfer plates to generate electricity, and electrically connected to each other; and a low-temperature part interposed between the pairs of thermoelectric modules and cooling inner surfaces of the pairs of thermoelectric modules. The plurality of thermoelectric modules generates electricity by a difference in temperature between heated outer surfaces and cooled inner surfaces. Thermoelectric efficiency is improved and a small-sized thermoelectric generator of a vehicle may be implemented. | 06-27-2013 |
Ho-Cheol Song, Seoul KR
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20130200001 | MAGNETITE AND BIRNESSITE AGGREGATE-FORM MIXTURE, SYNTHESIS METHOD THEREFOR, AND WATER-TREATMENT METHOD USING MIXTURE - The present invention relates to a magnetite-birnessite mixture, to a synthesis method therefor, and to a water-treatment method using the same. The magnetite-birnessite mixture synthesis method according to the present invention includes: a first synthesis step in which magnetite is synthesized; a second synthesis step in which manganese is made to adsorb onto the surface of the magnetite by supplying manganese while maintaining a basic state in the presence of the magnetite, and then synthesizing birnessite on the surface of the magnetite by supplying an oxidizing agent and sodium, thereby synthesizing a mixture in which magnetite and birnessite are bound together; and a purification step in which the mixture of magnetite and birnessite is purified. | 08-08-2013 |