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Hizuru
Hizuru Koshina, Mountain View, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20110250505 | NON-AQUEOUS ELECTROLYTE SECONDARY BATTERY - A lithium secondary battery comprises a negative electrode, a positive electrode comprising a current collector, an active cathode material comprising a lithium transition metal complex oxide coated on the current collector, and Si | 10-13-2011 |
| 20110250506 | NON-AQUEOUS ELECTROLYTE SECONDARY BATTERY - A lithium secondary battery comprises a negative electrode, a positive electrode comprising a current collector, an active cathode material comprising a lithium transition metal complex oxide, and sulfur, and an electrolyte comprising at least one lithium salt and at least one solvent. The at least one lithium salt is one of LiPF | 10-13-2011 |
Hizuru Yamaguchi, Aklsima JP
| Patent application number | Description | Published |
|---|---|---|
| 20090256261 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed. | 10-15-2009 |
Hizuru Yamaguchi, Akisima JP
| Patent application number | Description | Published |
|---|---|---|
| 20120015514 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed. | 01-19-2012 |